300-MHz to 4-GHz Quadrature Modulator datasheet (Rev. B)

1 PDGNDLOPLOMGNDGCVCCGNDRFOUTGNDGNDGNDVCCG NDGNDGNDBBIMBBQMBBIPBBQPGNDGNDGNDGND1234 56789101112181716151413242322212019S0/90 ProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityTRF3705 SLWS223B AUGUST2011 REVISEDNOVEMBER2015 TRF3705300-MHzto 4-GHzQuadratureModulator1 Features3 DescriptionTheTRF3705is a low-noisedirectquadrature1 HighLinearity: Modulator ,capableof convertingcomplexmodulated OutputIP3: 30 dBmat 1850 MHzsignalsfrombasebandor IF directlyup to RF. The Low OutputNoiseFloor: 160 dBm/HzTRF3705is a high-performance,superior-linearitydevic ethat is idealto up-convertto RF frequenciesof 78-dBcSingle-CarrierWCDMAACPR300 MHz(Note:appropriatematchingnetworkisat 10-dBmChannelPowerrequiredfor optimalperformanceat 300 MHz) UnadjustedCarrierSuppression: 40 dBmthrough4 modulatoris implementedas a UnadjustedSidebandSuppression: 45 dBcdouble-balancedmixer.

2 Outputblockconsistsof a differential-to- 1-bitGainStepControlsingle-endedconverte rthat is capableof drivingasingle-ended50- FastPower- fast2 Applicationspower-downpin that can be usedto reducepower CellularBaseStationTransmitterdissipatio nin TDDapplications. CDMA:IS95,UMTS,CDMA2000,TD-SCDMATheTRF37 05is availablein an RGE-24 VQFN LTE (LongTermEvolution)package. TDMA:GSM,EDGE/UWC-136 DeviceInformation(1) MulticarrierGSM(MC-GSM)PARTNUMBERPACKAGE BODYSIZE(NOM) WirelessMANW idebandTransceiversTRF3705 VQFN(24) x (1) For all availablepackages,see the orderableaddendumatthe end of the IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand AUGUST2011 Applicationand Pin Configurationand Deviceand :Two-ToneBaseband, :No Mechanical,Packaging,and RevisionHistoryNOTE.

3 Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (October2011)to RevisionBPage AddedtheESDtable,DetailedDescription,App licationandImplementation,DeviceandDocum entationSupport,Mechanical,Packaging, AddedNote1 to Figure65 ..23 Changedthe X-axislabelof Figure75 From:Frequency(MHz)To: LO Power(dBm)..28 (August2011)to RevisionAPage Changedthe deviceFrom:PreviewTo: 2011 2015,TexasInstrumentsIncorporatedProduct FolderLinks:TRF3705 PDGNDLOPLOMGNDGCVCCGNDRFOUTGNDGNDGNDT hermal AUGUST2011 REVISEDNOVEMBER20155 Pin Configurationand FunctionsRGEP ackage24 Pin VQFNTop ViewPin (high= deviceoff)2 GNDIG round3 LOPIL ocaloscillatorinput4 LOMIL ocaloscillatorinput5 GNDIG round6 GCIG aincontroldigitalinput(high= high gain)

4 7 GND Groundor leaveunconnected8 GNDIG round9 BBQMIIn-quadratureinput10 BBQPIIn-quadratureinput11 GNDIG round12 GNDIG round13 GNDIG round14 GNDIG round15 GNDIG round16 RFOUTORF output17 GNDIG round18 VCCIP owersupply19 GNDIG round20 GNDIG round21 BBIPIIn-phaseinput22 BBIMIIn-phaseinput23 GNDIG round24 VCCIP owersupplyCopyright 2011 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks:TRF3705 TRF3705 SLWS223B AUGUST2011 (1)Overoperatingfree-airtemperaturerange (unlessotherwisenoted).MINMAXUNITS upplyvoltagerange(2) voltagerange + ,TJ 40150 COperatingambienttemperaturerange,TA 4085 CStoragetemperaturerange,Tstg 65150 C(1)Stressesbeyondthoselistedunderabsolu temaximumratingsmay causepermanentdamageto the stressratingsonly,and functionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder recommendedoperatingconditionsis not absolute-maximum-ratedconditionsfor extendedperiodsmay affectdevicereliability.

5 (2)All voltagevaluesare with respectto (HBM),per ANSI/ESDA/JEDECJS-001(1) 4000V(ESD)ElectrostaticdischargeVCharged -devicemodel(CDM),per JEDEC specificationJESD22- 250C101(2)(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a (2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (unlessotherwisenoted). (1)RGE(VQFN)UNIT24 PINSR C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/WR JC(bot)Junction-to-case(bottom) C/W(1)For moreinformationabouttraditionaland new thermalmetrics,see theSemiconductorandICPackageThermalMetri csapplicationreport, 2011 2015, AUGUST2011 :GeneralOverrecommendedoperatingconditio ns.

6 At powersupply= V and TA= +25 C, PARAMETERSTA= +25 C, deviceon (PD = low)306mAICCT otalsupplycurrentTA= +25 C, deviceoff (PD = high)35 ALO INPUTLO low frequency300 MHzfLOLO high frequency4000 MHzLO inputpower 100+15dBmBASEBANDINPUTSI and Q inputdc timePD = low to 90%final sTurnoff timePD = high to initialoutputpower 30 sDIGITALINTERFACEVIHPD high-levelinputvoltage2 VVILPD 2011 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks:TRF3705 TRF3705 SLWS223B AUGUST2011 ;at powersupply= V, TA= +25 C, VCM= ; LO Power= 0 dBm,single-ended(LOP);GC set low, VINBB = VPP(diff)in Quadrature ,and fBB= MHz,standardbroadbandoutputmatchingcircu it, 400 MHzOutputRMSvoltageoverinputI (or Q) RMS ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) RMS ,GC set highGC set low set set set MHz;fBB2= MHz;GC set low26dBmIP3 OutputIP3fBB1= MHz;fBB2= MHz;GC set fLO+ (fBB1 fBB2), GC set fLO+ (fBB1 fBB2), GC set LO frequency 2 x LO 50dBmMeasuredat 3 x LO 49dBmOutputnoisefloorDC only to BB inputs.

7 10-MHzoffsetfromLO 1-MHztoneat VPPeachHD2 BBBasebandharmonics 67dBcat fLO (2 x fBB)Measuredwith 1-MHztoneat VPPeachHD3 BBBasebandharmonics 64dBcat fLO (3 x fBB)fLO= 750 MHzOutputRMSvoltageoverinputI (or Q) ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) ,GC set highGC set set high7dBmGC set set MHz;fBB2= MHz;GC set MHz;fBB2= MHz;GC set fLO+ (fBB1 fBB2), GC set fLO+ (fBB1 fBB2), GC set LO frequency 2 x LO 46dBmMeasuredat 3 x LO only to BB inputs;10-MHzoffsetfromLO 1-MHztoneat VPPeachHD2 BBBasebandharmonics 70dBcat fLO (2 x fBB)Measuredwith 1-MHztoneat VPPeachHD3 BBBasebandharmonics 66dBcat fLO (3 x fBB)6 SubmitDocumentationFeedbackCopyright 2011 2015, AUGUST2011 REVISEDNOVEMBER2015 ElectricalCharacteristics(continued)Over recommendedoperatingconditions;at powersupply= V, TA= +25 C, VCM= ; LO Power= 0 dBm,single-ended(LOP).

8 GC set low, VINBB = VPP(diff)in Quadrature ,and fBB= MHz,standardbroadbandoutputmatchingcircu it, 900 MHzOutputRMSvoltageoverinputI (or Q) ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) ,GC set highGC set set set set MHz;fBB2= MHz;GC set MHz;fBB2= MHz;GC set fLO+ (fBB1 fBB2), GC set fLO+ (fBB1 fBB2), GC set LO frequency 2 x LO 53dBmMeasuredat 3 x LO 50dBmOutputnoisefloorDC only to BB inputs;10-MHzoffsetfromLO 1-MHztoneat VPPeachHD2 BBBasebandharmonics 80dBcat fLO (2 x fBB)Measuredwith 1-MHztoneat VPPeachHD3 BBBasebandharmonics 65dBcat fLO (3 x fBB)fLO= 1840 MHzOutputRMSvoltageoverinputI (or Q) RMS ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) ,GC set highGC set set set set MHz;fBB2= MHz;GC set MHz;fBB2= MHz;GC set fLO+ (fBB1 fBB2), GC set fLO+ (fBB1 fBB2), GC set high62dBmSBSU nadjustedsidebandsuppression LO frequency 2 x LO 41dBmMeasuredat 3 x LO 53dBmOutputnoisefloorDC only to BB inputs.

9 10-MHzoffsetfromLO 1-MHztoneat VPPeachHD2 BBBasebandharmonics 69dBcat fLO (2 x fBB)Measuredwith 1-MHztoneat VPPeachHD3 BBBasebandharmonics 80dBcat fLO (3 x fBB)Copyright 2011 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks:TRF3705 TRF3705 SLWS223B AUGUST2011 (continued)Overrecommendedoperatingcondi tions;at powersupply= V, TA= +25 C, VCM= ; LO Power= 0 dBm,single-ended(LOP);GC set low, VINBB = VPP(diff)in Quadrature ,and fBB= MHz,standardbroadbandoutputmatchingcircu it, 2140 MHzOutputRMSvoltageoverinputI (or Q) ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) ,GC set highGC set set set set MHz;fBB2= MHz;GC set MHz;fBB2= MHz;GC set fLO+ (fBB1 fBB2), GC set fLO+ (fBB1 fBB2), GC set LO frequency 2 x LO 37dBmMeasuredat 3 x LO 46dBmOutputnoisefloorDC only to BB inputs.

10 10-MHzoffsetfromLO 1-MHztoneat VPPeachHD2 BBBasebandharmonics 61dBcat fLO (2 x fBB)Measuredwith 1-MHztoneat VPPeachHD3 BBBasebandharmonics 60dBcat fLO (3 x fBB)fLO= 2600 MHzOutputRMSvoltageoverinputI (or Q) RMS ,GC set lowGVoltagegainOutputRMSvoltageoverinput I (or Q) RMS2dBvoltage,GC set highGC set set set set MHz;fBB2=