30V N-Channel AlphaMOS

1 AON750630V N-Channel AlphaMOSG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)12A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS= )< m Application100% UIS Tested100% Rg TestedSymbolVDSVM aximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise noted30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and IndustrialDrain-Source Voltage30G DSTop View12348765 DFN 3x3 EPTop View Bottom View Pin 1 VDSVGSIDMIASEASVDS SpikeVSPIKETJ, TSTGS ymbolt 10sSteady-StateSteady-StateR 100ns36VA20 Avalanche energy L= CMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A C8TC=100 CPDSMWTA=70 C2TA=25 CTC=100 C48 Pulsed Drain Current CContinuous DrainCurrent GPower Dissipation BPDP ower Dissipation AmJAvalanche Current DrainCurrentG1012 ATA=25 CIDSMATA=70 CID1240V 20 Gate-Source VoltageDrain-Source Voltage30 Maximum Junction-to-Ambient A C/WR JA30 UnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameter Rev0.

2 July 2012 1 of 6 AON7506 SymbolMinTypMaxUnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold Qg(10V) ( ) (on) Transfer CapacitanceVGS=0V, VDS=15V, f=1 MHzMaximum Body-Diode Continuous Current GInput CapacitanceOutput CapacitanceForward TransconductanceVDS=5V, ID=12 ADYNAMIC PARAMETERSRDS(ON)Static Drain-Source On-ResistanceDiode Forward VoltageVGS= , ID=10 ASWITCHING PARAMETERSTurn-On DelayTimeGate Drain ChargeTotal Gate ChargeVGS=10V, VDS=15V, ID=12 ATurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=15V, RL= ,R=3 Electrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIS=1A,VGS=0 VIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown Voltagem ID=250 A, VGS=0 VVGS=10V, ID=12 AGate-Body leakage currentVDS=VGS, ID=250 AVDS=0V, VGS= 20 VGate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeGate Source ChargetD(off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=12A, dI/dt=500A/ sIF=12A, dI/dt=500A/ sTurn-Off DelayTimeRGEN=3 Turn-Off Fall TimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s valueand the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

4 C. Single pulse width limited by junction temperature TJ(MAX)=150 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev0 : July 2012 2 of 6 AON7506 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180102030405001234 56ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)4681012141603691215 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)0510152025246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=12A25 C125 C Rev0: July 2012 3 of 6 AON7506 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02468100246810 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800051015202530 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case CossCrssVDS=15 VID=12 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s100ms(Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11.

6 Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseOperating Area (Note F)R JC=6 C/W Rev0: July 2012 4 of 6 AON7506 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0510152025300255075100125 150 Power Dissipation (W)TCASE( C)Figure 12: Power De-rating (Note F)051015200255075100125150 Current rating ID(A)TCASE( C)Figure 13: Current De-rating (Note F) (W)Pulse Width (s)TA=25 JANormalized Transient Thermal ResistancePulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulsePulse Width (s)Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=75 C/W Rev0: July 2012 5 of 6 AON7506 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr Rev0: July 2011 6 of 6