4章 フラッシュメモリ - ieice-hbkb.org

1 8 2 8 2 4 [2011 2 ] 1984 EPROM Erasable Programmable Random Access Memory 1 EEPROM Electrically Erasable Programmable Random Access Memory 1990 USB PC SSD Solid State Drive PC HDD LSI NOR 1987 NAND

2 20 64 G 2011 2 DRAM LSI 2-1 2-2 2-3 2-4 2-5 2011 1/(25) 8 2 8 2 4 4-1 : [2008 9 ] SOC SSD Solid State Drive 4-1-1 RAM Random Access Memory ROM Read Only Memory ROM 4 1 4 1 In-System Mask ROM1 @ PROM1 EPROM 100 UV EEPROM 100.

3 000 / Flash Memory 100,000 / DRAM / Mask ROM Mask-programmed Read Only MemoryPROM Programmable Read Only Memory EPROM Erasable and Programmable Read Only Memory EEPROM Electrically Erasable and Programmable Read Only MemoryDRAM Dynamic Random Access Memory In-System Mask ROM1 @ PROM1 EPROM 100 UV EEPROM 100,000 / Flash Memory 100,000 / DRAM / Mask ROM Mask-programmed Read Only MemoryPROM Programmable Read Only Memory EPROM Erasable and Programmable Read Only Memory EEPROM Electrically Erasable and Programmable Read Only MemoryDRAM Dynamic Random Access Memory 1 Mask ROM PROM EPROM RAM EEPROM EEPROM 1 1984 1) 2) 2011 2/(25)

4 8 2 1990 DRAM 4-1-2 MOSFET MOSFET RAM 4 2 4 2 DS-/SS- CHEI Drain-Side / Source Side Channel Hot Electron InjectionBTBT-HHI Band-to-Band Tunneling induced Hot Hole InjectionFNT EI/EE Fowler-Nordheim Tunneling Electron Injection / Electron EjectionFNT EE w/ FEI FNT EE with Field-Enhancing tunneling InjectorNOR (3)NAND (4)SuperFlash (5)AG-AND (6)NROM (7)

5 FGFGFGFGSiO2-Si3N4-SiO2DS-CHEIFNT EISS-CHEISS-CHEIDS-CHEI FNT EEFNT EEFNT EE w/ FEIFNT EEBTBT-HHI 1 VTH 2 , 4 / DS-/SS- CHEI Drain-Side / Source Side Channel Hot Electron InjectionBTBT-HHI Band-to-Band Tunneling induced Hot Hole InjectionFNT EI/EE Fowler-Nordheim Tunneling Electron Injection / Electron EjectionFNT EE w/ FEI FNT EE with Field-Enhancing tunneling InjectorNOR (3)NAND (4)SuperFlash (5)AG-AND (6)NROM (7) FGFGFGFGSiO2-Si3N4-SiO2 SiO2-Si3N4-SiO2DS-CHEIFNT EISS-CHEISS-CHEIDS-CHEI FNT EEFNT EEFNT EE w/ FEIFNT EEBTBT-HHI 1 VTH 2 , 4 / NOR 3) EPROM 8 10 nm FN NAND 4)

6 EEPROM FN 10 MB/s NOR 1/2 2011 3/(25) 8 2 SuperFlash 5) SS-CHEI VTH AG-AND 6) SS-CHEI NROM 7) Si3N4 2 4-1-3 4 3 8) 9) 100 nm 1 fC SILC 10)

7 4 3 SILC SILC Stress Induced Leakage Current SILC SILC SILC Stress Induced Leakage Current 1) F.

8 Masuoka, et al., A new Flash E2 PROM cell using triple polysilicon technology, IEEE IEDM Tech. Digest, , 1984. 2) , , , , , , 1996. 3) V. N. Kynett, et al., An in-system reprogrammable 32K 8 CMOS Flash memory, IEEE J. Solid-State Circuits, , , , 1988. 4) Y. Iwata, et al., A 35ns-cycle-time 32Mb NAND Flash EEPROM, IEEE J. Solid-State Circuits, , , , 1995. 5) S. Kianian, et al., A novel 3volts-only, small sector erase, high density Flash E2 PRPM, 1994 Symposium on 2011 4/(25) 8 2 VLSI Technology, Digest of Technical Papers, , 1994. 6) H. Kurata, et al., A 130-nm CMOS 95-mm2 1-Gb multilevel AG-AND-type Flash memory with 10-MB/s programming throughput, IEICE Trans.

9 Electron. , , , 2006. 7) E. Maayan, et al., A 512Mb NROM Flash data storage memory with 8 MB/s data rate, IEEE ISSCC Digest Tech. Papers, , 2002. 8) T. Ong, et al., Erratic erase in ETOXTM Flash memory array, 1993 Symposium on VLSI Technology, Digest of Technical Papers, , 1993. 9) T. Tanzawa, et al., A compact on-chip ECC for low cost Flash memories, IEEE J. Solid-State Circuits, , , , 1997. 10) Y. Manabe, et al., Detailed observation of small leak current in Flash memories with thin tunnel oxide, IEEE Trans. Semi. Manufacturing, , , , 1999. 2011 5/(25) 8 2 8 2 4 4-2 [2008 10 ]

10 2 TA G IC IC 10 IC SiP System in Package LSI 1 NOR 4-2-1 NOR 3 4 1 2 Gate Channel Drain Control Gate Floating GateGate Oxide Source 4 1 4 2 MONOS MONOS Metal Oxide Nitride Oxide MOS MONOS 2011 6/(25) 8 2 2 1 2 1)