40V N-Channel MOSFET

1 AON624040V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)85A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS = )< 100% UIS Tested100% Rg TestedSymbolVDS40 VDrain-Source VoltageThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching losses areminimized due to an extremely low combination ofRDS(ON) and addition,switching behavior is wellcontrolled with a "Schottky style" soft recovery Maximum Ratings TA=25 C unless otherwise notedParameter40 GDSTop View12348765 PIN1 DFN5X6 Top ViewBottom ViewVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMax33TC=100 CWTC=25 CWTA=70 CPower Dissipation APDSM C/WR JA144017 UnitsJunction and Storage Temperature Junction-to-Ambient A-55 to 150 CThermal CharacteristicsTypDrain-Source VoltagemJContinuous DrainCurrent GV336V 20 Gate-Source Voltage40 Avalanche Current C2227 Avalanche energy L= CA82 Continuous DrainCurrentID8567 ATA=70 CATA=25 CIDSMM aximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A CTC=100 C355 Pulsed Drain Current CPower Dissipation BPDGDSTop View12348765 PIN1 DFN5X6 Top ViewBottom View Rev 0.

2 February 2011 1 of 6 AON6240 SymbolMinTypMaxUnitsBVDSS40 VVDS=40V, VGS=0V1TJ=55 C5 IGSS100nAVGS(th)Gate Threshold (ON) Qg(10V) ( ) (on) Drain ChargeIS=1A,VGS=0 VSWITCHING PARAMETERST otal Gate ChargeMaximum Body-Diode Continuous CurrentGInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeTotal Gate ChargeElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsZero Gate Voltage Drain CurrentID=250 A, VGS=0 VVGS=10V, VDS=5 VGate-Body leakage currentDrain-Source Breakdown VoltageRDS(ON)Static Drain-Source On-ResistanceIDSSVGS= , ID=20 AVGS=10V, ID=20 AOn state drain currentV=10V, V=20V, R=1 ,Gate resistanceVGS=0V, VDS=0V, f=1 MHz AVDS=VGS ID=250 AVDS=0V, VGS= 20Vm Reverse Transfer CapacitanceVGS=0V, VDS=20V, f=1 MHzForward TransconductanceDiode Forward VoltageVDS=5V, ID=20 AVGS=10V, VDS=20V, ID=20 AGate Source (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeIF=20A, dI/dt=500A/ sTurn-Off DelayTimeIF=20A, dI/dt=500A/ sBody Diode Reverse Recovery TimeTurn-On Rise TimeVGS=10V, VDS=20V, RL=1 ,RGEN=3 Turn-Off Fall TimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAand the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

4 C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedence from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev 0: February 2011 2 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS01020304050600123456ID(A) VGS(Volts)Figure 2: Transfer Characteristics (Note E)01234051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= (A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)01234051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= (ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)25 C125 CVDS=5 VVGS= C125 C0102030405060012345ID(A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= Rev 0: February 2011 3 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10ms1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s02468100102030405060708090 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0100020003000400050006000 70000510152025 Capacitance (pF)VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=20 VID=20 ATJ(Max)=150 CTC=25 (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10ms1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s02468100102030405060708090 VGS(Volts)Qg(nC)Figure 7.

6 Gate-Charge Characteristics0100020003000400050006000 70000510152025 Capacitance (pF)VDS(Volts)Figure 8: Capacitance JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)CossCrssVDS=20 VID=20 ASingle PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseTJ(Max)=150 CTC=25 CR JC= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Rev 0: February 2011 4 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0102030405060708090100025 5075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)01020304050607080901000255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)TA=25 (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulse01020304050607080901000255075100125 150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)01020304050607080901000255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)TA=25 CR JA=55 (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 C Rev 0.

7 February 2011 5 of 6 AON6240 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVgs VdsBVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARAR-+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffVddVgsI dVgsRgDUT-+VDCLVgsVdsIdVgsBVIU nclamped Inductive Switching (UIS) Test Circuit & WaveformsIgVgs-+VDCDUTLVdsVgsVdsIsdIsdDi ode Recovery Test Circuit & WaveformsVds -Vds +IFARDSS2E = 1/2 LIdI/dtIRMrrVddVddQ = - IdtARARtrr Rev 0: February 2011 6 of 6