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BAT54 SERIES SOT23 SILICON EPITAXIAL BAT54 SERIES …

SOT23 SILICON EPITAXIALSCHOTTKY BARRIER DIODESISSUE 1 SEPTEMBER 1995 JFEATURES: Low VF & High Current CapabilityAPPLICATIONS: PSU, Mobile Telecomms & SCSIABSOLUTE MAXIMUM Reverse VoltageVR30 VForward CurrentIF200mAForward Voltage @ IF =10mAVF400mVRepetitive Peak Forward CurrentIFRM300mANon Repetitive Forward Current t<1sIFSM600mAPower Dissipation at Tamb=25 CPtot330mWStorage Temperature RangeTstg-55 to +150 CJunctionTemperature Tj125 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). UNIT BreakdownVoltageV(BR)R3050 VIR=10 AForward VoltageVF1352002803505302403204005001000 mVmVmVmVmVIF= AVR=25 VDiode ,VR=1 VReverse Recover Timetrr5nsswitched from IF=10mA to IR=10mARL=100 , Measuredat IR=1mA Dual Device; For simultaneous continuous use Tj=100 SERIES132 BAT54 BAT54 ABAT54 SBAT54 CDevice TypeSINGLECOMMONANODESERIESCOMMONCATHODE Pin ConfigurationL4ZL42L44L43 Partmarking Detail3010200+125 C+ 85 CTA - A

sot23 silicon epitaxial schottky barrier diodes issue 1Œ september 1995 features: low vf & high current capability applications: psu, mobile telecomms & scsi absolute …

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  Barriers, Diode, Schottky, Schottky barrier diodes

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Transcription of BAT54 SERIES SOT23 SILICON EPITAXIAL BAT54 SERIES …

1 SOT23 SILICON EPITAXIALSCHOTTKY BARRIER DIODESISSUE 1 SEPTEMBER 1995 JFEATURES: Low VF & High Current CapabilityAPPLICATIONS: PSU, Mobile Telecomms & SCSIABSOLUTE MAXIMUM Reverse VoltageVR30 VForward CurrentIF200mAForward Voltage @ IF =10mAVF400mVRepetitive Peak Forward CurrentIFRM300mANon Repetitive Forward Current t<1sIFSM600mAPower Dissipation at Tamb=25 CPtot330mWStorage Temperature RangeTstg-55 to +150 CJunctionTemperature Tj125 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). UNIT BreakdownVoltageV(BR)R3050 VIR=10 AForward VoltageVF1352002803505302403204005001000 mVmVmVmVmVIF= AVR=25 VDiode ,VR=1 VReverse Recover Timetrr5nsswitched from IF=10mA to IR=10mARL=100 , Measuredat IR=1mA Dual Device.

2 For simultaneous continuous use Tj=100 SERIES132 BAT54 BAT54 ABAT54 SBAT54 CDevice TypeSINGLECOMMONANODESERIESCOMMONCATHODE Pin ConfigurationL4ZL42L44L43 Partmarking Detail3010200+125 C+ 85 CTA - Ambient Temperature ( C)PD v TA Characteristics090180270330CT v VR Characteristics051015050100150 Forward Voltage VF (V)IF v VF +125 C10 100 +8 5 C+2 5 100 10m1mReverse Voltage VR(V)IRv VRCharacteristicsReverse Voltage VR (V)02010301 +25 CTYPICAL CHARACTERISTICSBAT54 SERIES3 - 43 - 5 SOT23 SILICON EPITAXIALSCHOTTKY BARRIER DIODESISSUE 1 SEPTEMBER 1995 JFEATURES: Low VF & High Current CapabilityAPPLICATIONS: PSU, Mobile Telecomms & SCSIABSOLUTE MAXIMUM Reverse VoltageVR30 VForward CurrentIF200mAForward Voltage @ IF =10mAVF400mVRepetitive Peak Forward CurrentIFRM300mANon Repetitive Forward Current t<1sIFSM600mAPower Dissipation at Tamb=25 CPtot330mWStorage Temperature RangeTstg-55 to +150 CJunctionTemperature Tj125 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

3 UNIT BreakdownVoltageV(BR)R3050 VIR=10 AForward VoltageVF1352002803505302403204005001000 mVmVmVmVmVIF= AVR=25 VDiode ,VR=1 VReverse Recover Timetrr5nsswitched from IF=10mA to IR=10mARL=100 , Measuredat IR=1mA Dual Device; For simultaneous continuous use Tj=100 SERIES132 BAT54 BAT54 ABAT54 SBAT54 CDevice TypeSINGLECOMMONANODESERIESCOMMONCATHODE Pin ConfigurationL4ZL42L44L43 Partmarking Detail3010200+125 C+ 85 CTA - Ambient Temperature ( C)PD v TA Characteristics090180270330CT v VR Characteristics051015050100150 Forward Voltage VF (V)IF v VF +125 C10 100 +8 5 C+2 5 100 10m1mReverse Voltage VR(V)IRv VRCharacteristicsReverse Voltage VR (V)02010301 +25 CTYPICAL CHARACTERISTICSBAT54 SERIES3 - 43 - 5


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