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BAW56 Small Signal Diode - redrok.com

BAW56 BAW56 , Rev. CSmall Signal DiodeAbsolute Maximum Ratings* TA = 25 C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be :1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle 2001 Fairchild Semiconductor CorporationThermal CharacteristicsElectrical Characteristics TA = 25 C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = second Pulse Width = microsecond A A Tstg Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature 150 C Symbol Parameter Value Units PD Power Dissipation 350 mW R JA Thermal Resistance, Junction to Ambient 357 C/W 123A1123 Connection Diagram312 SOT-23 Symbol Parameter Test Conditi

BA W56 BAW56, Rev. C Small Signal Diode Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.The factory should be consulted on applications involving pulsed ...

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Transcription of BAW56 Small Signal Diode - redrok.com

1 BAW56 BAW56 , Rev. CSmall Signal DiodeAbsolute Maximum Ratings* TA = 25 C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be :1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle 2001 Fairchild Semiconductor CorporationThermal CharacteristicsElectrical Characteristics TA = 25 C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = second Pulse Width = microsecond A A Tstg Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature 150 C Symbol Parameter Value Units PD Power Dissipation 350 mW R JA Thermal Resistance.

2 Junction to Ambient 357 C/W 123A1123 Connection Diagram312 SOT-23 Symbol Parameter Test Conditions Min Max Units VR Breakdown Voltage IR = A 85 V VF Forward Voltage IF = mA IF = 10 mA IF = 50 mA IF = 150 mA 715 855 mV mV V V IR Reverse Current VR = 70 V VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C 30 50 A A A CT Total Capacitance VR = 0, f = MHz pF trr Reverse Recovery Time IF = IR = 10 mA, IRR = mA, RL = 100 ns DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

3 FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c)

4 Whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety STATUS DEFINITIONSD efinition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications.

5 FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information orIn DesignFirst ProductionFull ProductionNot In ProductionOPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrenchQFET QS QT Optoelectronics Quiet Series SILENT SWITCHERFASTFASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE Rev. H4 ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2 CMOSTMEnSignaTMFACT FACT Quiet Series SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET STAR*POWER is used under licenseVCX