BD135/137/139 NPN Epitaxial Silicon Transistor

1 2000 Fairchild Semiconductor InternationalRev. A, February 2000BD135/137/1391TO-126 NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25 C unless otherwise notedElectrical Characteristics TC=25 C unless otherwise notedhFE ClassificationSymbolParameterValueUnits VCBO Collector-Base Voltage : BD135 : BD137 : BD139 45 60 80 VVV VCEO Collector-Emitter Voltage : BD135 : BD137 : BD139 45 60 80 VVV VEBO Emitter-Base Voltage 5V IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25 C) PC Collector Dissipation (Ta=25 C) TJ Junction Temperature 150 C TSTG Storage Temperature- 55 ~ 150 CSymbolParameterTest VCEO(sus) Collector-Emitter Sustaining Voltage: BD135: BD137: BD139IC = 30mA, IB = 0 456080 VVV ICBO Collector Cut-off CurrentVCB = 30V, IE = A IEBO Emitter Cut-off CurrentVEB = 5V, IC = 0 10 A hFE1 hFE2 hFE3 DC Current Gain : ALL DEVICE: ALL DEVICE: BD135: BD137, BD139 VCE = 2V, IC = 5mAVCE = 2V, IC = = 2V, IC = 150mA25254040250160 VCE(sat) Collector-Emitter Saturation VoltageIC = 500mA, IB = VBE(on) Base-Emitter ON VoltageVCE = 2V, IC = 1 VClassification61016hFE340 ~ 10063 ~ 160100 ~ 250BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively1.

2 Emitter 2000 Fairchild Semiconductor InternationalBD135/137/139 Rev. A, February 2000 Typical CharacteristicsFigure 1. DC current GainFigure 2. Collector-Emitter Saturation VoltageFigure 3. Base-Emitter VoltageFigure 4. Safe Operating AreaFigure 5. Power Derating1010010000102030405060708090100 VCE = 2V hFE, DC CURRENT GAINIC[mA], COLLECTOR = 10 IBIC = 20 IB VCE(sat)[mV], SATURATION VOLTAGEIC[A], COLLECTOR (on)VCE = 5 VVBE(sat)IC = 10 IB VBE[V], BASE-EMITTER VOLTAGEIC[A], COLLECTOR MAX. (Pulsed)IC MAX. (Continuous) IC[A], COLLECTOR CURRENTVCE[V], COLLECTOR-EMITTER PC[W], POWER DISSIPATIONTC[oC], CASE TEMPERATUREP ackage Demensions 2000 Fairchild Semiconductor InternationalRev. A, February 2000BD135/137/139 Dimensions in # [ ] [ ] ( )( ) + 2000 Fairchild Semiconductor InternationalRev. ETRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such Bottomless CoolFET CROSSVOLT E2 CMOS FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

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