CS12N65F+A9H[1] - crhj.com.cn

1 CS12N65F A9H WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01 R Silicon N-Channel Power MOSFET General Description CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features l Fast Switching l Low ON Resistance(Rdson ) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger.

2 Absolute Tc= 25 C unless otherwise specified Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current 12 A Continuous Drain Current TC = 100 C 10 A IDMa1 Pulsed Drain Current 48 A VGS Gate-to-Source Voltage 30 V EAS a2 Single Pulse Avalanche Energy 700 mJ EAR a1 Avalanche Energy ,Repetitive 100 mJ IAR a1 Avalanche Current A dv/dt a3 Peak Diode Recovery dv/dt V/ns PD Power Dissipation 55 W Derating Factor above 25 C W/ C TJ Tstg Operating Junction and Storage Temperature Range 150 55 to 150 C TL Maximum Temperature for Soldering 300 C VDSS 650 V ID 12 A PD (TC=25 C) 55 W RDS(ON)Typ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.

3 , LTD. Page 2 of 10 2015V01 R CS12N65F A9H Electrical Characteristics Tc= 25 C unless otherwise specified OFF Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 A 650 -- -- V BVDSS/ TJ Bvdss Temperature Coefficient ID=250uA,Reference25 C -- -- V/ C IDSS Drain to Source Leakage Current VDS = 650V, VGS= 0V, Ta = 25 C -- -- 1 A VDS =520V, VGS= 0V, Ta = 125 C -- -- 100 IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min.

4 Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=6A -- VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250 A V Pulse width tp 300 s, 2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Trans conductance VDS=15V, ID = -- 12 -- S Ciss Input Capacitance VGS = 0V VDS = 25V f = -- 2060 -- pF Coss Output Capacitance -- 184 -- Crss Reverse Transfer Capacitance -- 16 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID = VDD = 325V VGS = 10V RG = -- 15 -- ns tr Rise Time -- 18 -- td(OFF) Turn-Off Delay Time -- 44 -- tf Fall Time -- 22 -- Qg Total Gate Charge ID = VDD =325V VGS = 10V -- 44 nC Qgs Gate to Source Charge -- -- Qgd Gate to Drain ( Miller )Charge -- 18 -- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.

5 , LTD. Page 3 of 10 2015V01 R CS12N65F A9H Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 12 A ISM Maximum Pulsed Current (Body Diode) -- -- 48 A VSD Diode Forward Voltage IS= ,VGS=0V -- -- V trr Reverse Recovery Time IS= ,Tj = 25 C dIF/dt=100A/us, VGS=0V -- 345 -- ns Qrr Reverse Recovery Charge -- 2680 -- nC Pulse width tp 300 s, 2% Symbol Parameter Typ. Units R JC Junction-to-Case C/W R JA Junction-to-Ambient 100 C/W a1 Repetitive rating; pulse width limited by maximum junction temperature a2 L= , ID= , Start TJ=25 C a3 ISD =12A,di/dt 100A/us,VDD BVDS, Start TJ=25 C WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.

6 , LTD. Page 4 of 10 2015V01 R CS12N65F A9H Tc , Case Temperature , C50Pd , Power Dissipation ,Watts0015253045100751251506075 Characteristics Curve Pulse Duration,SecondsThermal Impedance, Normalized Vds , Drain-to-Source Voltage , Volts00351015Id , Drain Current , Amps691215202530352118 Vds , Drain-to-Source Voltage , VoltsId , Drain Current , Figure 2 Maximum Power Dissipation vs Case Temperature Figure 5 Maximum Effective Thermal Impendance , Junction to Case Figure 4 Typical Output Characteristics Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 1 Maximum Forward Bias Safe Operating Area DC 10 s 1ms 10ms VGS=9V VGS=5V VGS=6V VGS=7V VGS=8V PDMt2t1 NOTES DUTY FACTOR D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 50% 20% 10% 5% Single pulse 2% 1% 62503501591275100125150018Id , Drain Current ,AmpsTc , Case Temperature ,C100 s OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)

7 TJ=MAX RATED TC=25 C Single Pulse WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2015V01 R CS12N65F A9H (on), Drain to Source ONResistance , Ohms2 Vgs , Gate to Source Voltage , Junction temperature ,CRds(on), Drain to Source ONResistance, Nomalized Id , Drain Current , AmpsResistance , OhmsRds(on), Drain to Source 02468101214024681012 Vgs , Gate to Source Voltage VoltsId , Drain Current ,Amps Idm , Peak Current , Width , Secondst + +01 Figure 6 Maximum Peak Current Capability Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics Figure 10 Typical Drian to Source on Resistance vs Junction Temperature Figure 9 Typical Drain to Source ON Resistance vs Drain Current TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS.

8 =12515025 CTII ID= 12A ID= 6A ID= 3A VGS=10V PULSE DURATION = 10 s DUTY FACTOR = Tc =25 C PULSED TEST VDS=30V PULSED TEST Tc =25 C PULSED TEST VGS=10V ID=6A VGS=10V WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2015V01 R CS12N65F A9H Breakdown Voltage, , Junction temperature , C25-25-5005010075150125175 Bvdss,Drain to , Source - Drain Voltage , VoltsIsd, Reverse Drain Current , Amps15 Vgs , Gate to Source Voltage ,Volts00396121560Qg , Total Gate Charge , nC304575 Vds , Drain - Source Voltage , Volts100050020 Capacitance , , Junction temperature , CVgs(th)

9 ,Threshold Voltage, NomalizedFigure 13 Typical Capacitance vs Drain to Source Voltage Figure 16 Unclamped Inductive Switching Capability Figure 15 Typical Body Diode Transfer Characteristics Figure 14 Typical Gate Charge vs Gate to Source Voltage tav , Time in Avalanche , , Drain Current , Ciss Coss Crss VGS=0V , f=1 MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd VDS=480V ID=12A +150 C +25 C -55 C STARTING Tj = 25 C STARTING Tj = 150 C If R=0: tAV=(L* IAS) / ( ) If R 0: tAV=(L/R) In[IAS*R/ ( )+1] R equals total Series resistance of Drain circuit Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature VGS=0V ID=250 A VGS=0V ID=250 A VGS=0V WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.

10 , LTD. Page 7 of 10 2015V01 R CS12N65F A9H Test Circuit and Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2015V01 R CS12N65F A9H WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2015V01 R CS12N65F A9H Package Information TO-220F Package Items Values(mm) MIN MAX A B B1 C C1 D E F G H L N Q WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.