CSD18532KCS 60-V N-Channel NexFET Power …

1 Product Sample & Technical Tools & Support &. Folder Buy Documents Software Community CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014. CSD18532 KCS 60-V N-Channel NexFET Power MOSFET. 1 Features Product Summary . 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT. Low Thermal Resistance VDS Drain-to-Source Voltage 60 V. Avalanche Rated Qg Gate Charge Total (10 V) 44 nC. Logic Level Qgd Gate Charge Gate-to-Drain nC. Pb Free Terminal Plating RDS(on) Drain-to-Source On Resistance VGS = V m . VGS = 10 V m . RoHS Compliant VGS(th) Threshold Voltage V. Halogen Free TO-220 Plastic Package Ordering Information(1). Device Package Media Qty Ship 2 Applications TO-220 Plastic CSD18532 KCS Tube 50 Tube DC-DC Conversion Package Secondary Side Synchronous Rectifier (1) For all available packages, see the orderable addendum at the end of the data sheet. Motor Control Absolute Maximum Ratings 3 Description TA = 25 C VALUE UNIT. This 60 V, m , TO-220 NexFET Power VDS Drain-to-Source Voltage 60 V.

2 MOSFET is designed to minimize losses in Power VGS Gate-to-Source Voltage 20 V. conversion applications. Continuous Drain Current (Package limited), Drain (Pin 2) 100. TC = 25 C. Continuous Drain Current (Silicon limited), ID 169 A. TC = 25 C. Continuous Drain Current (Silicon limited), 116. TC = 100 C. IDM Pulsed Drain Current (1) 400 A. Gate (Pin 1) PD Power Dissipation 250 W. TJ, Operating Junction and 55 to 175 C. Tstg Storage Temperature Range Source (Pin 3) Avalanche Energy, single pulse EAS 281 mJ. ID = 75 A, L = mH, RG = 25 . (1) Pulse duration 300 s, duty cycle 2%. RDS(on) vs VGS Gate Charge 12 10. TC = 25 C Id = 100A ID = 100A. RDS(on) - On-State Resistance (m ). VGS - Gate-to-Source Voltage (V). TC = 125 C Id = 100A VDS = 30V. 10. 8. 8. 6. 6. 4. 4. 2. 2. 0 0. 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 50. VGS - Gate-to- Source Voltage (V) G001. Qg - Gate Charge (nC) G001. 1. An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers.

3 PRODUCTION DATA. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014 Table of Contents 1 Features .. 1 Typical MOSFET Characteristics .. 4. 2 Applications .. 1 6 Device and Documentation 7. 3 Description .. 1 Trademarks .. 7. 4 Revision 2 Electrostatic Discharge Caution .. 7. Glossary .. 7. 5 3. Electrical 3 7 Mechanical 8. Thermal Information .. 3 KCS Package 8. 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (October 2012) to Revision B Page Increased ID at TC = 100 C to 116 A .. 1. Increased IDM to 400 A .. 1. Increased max operating junction and storage temperature to 175 C .. 1. Updated Figure 1 from a normalized R JA to an R JC curve .. 4. Updated Figure 6 to extend to 175 C .. 5. Updated Figure 8 to extend to 175 C .. 5. Updated the SOA in Figure 10 .. 6. Updated Figure 12 to extend to 175 C .. 6. Changes from Original (August 2012) to Revision A Page Changed the Transconductance TYP value From: 146 S To: 187 3.

4 Changed R JA From: MAX = 62 C/W To: MAX = 65 3. Changed Figure 4. 2 Submit Documentation Feedback Copyright 2012 2014, Texas Instruments Incorporated Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014. 5 Specifications Electrical Characteristics (TA = 25 C unless otherwise stated). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT. STATIC CHARACTERISTICS. BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 A 60 V. IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 A. IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA. VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 A V. VGS = V, ID = 100 A m . RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 100 A m . g s Transconductance VDS = 30 V, ID = 100 A 187 S. DYNAMIC CHARACTERISTICS. Ciss Input Capacitance 3900 4680 pF. Coss Output Capacitance VGS = 0 V, VDS = 30 V, = 1 MHz 470 564 pF. Crss Reverse Transfer Capacitance 11 14 pF.

5 RG Series Gate Resistance . Qg Gate Charge Total ( V) 21 25 nC. Qg Gate Charge Total (10 V) 44 53 nC. Qgd Gate Charge Gate-to-Drain VDS = 30 V, ID = 100 A nC. Qgs Gate Charge Gate-to-Source 10 nC. Qg(th) Gate Charge at Vth nC. Qoss Output Charge VDS = 30 V, VGS = 0 V 52 nC. td(on) Turn On Delay Time ns tr Rise Time VDS = 30 V, VGS = 10 V, ns td(off) Turn Off Delay Time IDS = 100 A, RG = 0 ns t Fall Time ns DIODE CHARACTERISTICS. VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 1 V. Qrr Reverse Recovery Charge VDS= 30 V, IF = 100 A, 127 nC. trr Reverse Recovery Time di/dt = 300 A/ s 57 ns Thermal Information (TA = 25 C unless otherwise stated). THERMAL METRIC MIN TYP MAX UNIT. R JC Junction-to-Case Thermal Resistance C/W. R JA Junction-to-Ambient Thermal Resistance 62. Copyright 2012 2014, Texas Instruments Incorporated Submit Documentation Feedback 3. Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014 Typical MOSFET Characteristics (TA = 25 C unless otherwise stated).

6 Figure 1. Transient Thermal Impedance 180 200. VDS = 5V. 180. IDS - Drain-to-Source Current (A). 160. IDS - Drain-to-Source Current (A). 140 160. 140. 120. 120. 100. 100. 80. 80. 60. 60. 40 VGS =10V 40 TC = 125 C. 20 VGS = TC = 25 C. VGS = 20. TC = 55 C. 0 0. 0 1 0 1 2 3 4 5. VDS - Drain-to-Source Voltage (V) G001. VGS - Gate-to-Source Voltage (V) G001. Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 4 Submit Documentation Feedback Copyright 2012 2014, Texas Instruments Incorporated Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014. Typical MOSFET Characteristics (continued). (TA = 25 C unless otherwise stated). 10 50000. ID = 100A Ciss = Cgd + Cgs VGS - Gate-to-Source Voltage (V). VDS = 30V Coss = Cds + Cgd 8 10000 Crss = Cgd C Capacitance (pF). 6. 1000. 4. 100. 2. 0 10. 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60. Qg - Gate Charge (nC) G001. VDS - Drain-to-Source Voltage (V) G001.

7 Figure 4. Gate Charge Figure 5. Capacitance 12. ID = 250uA TC = 25 C Id = 100A. RDS(on) - On-State Resistance (m ) TC = 125 C Id = 100A. VGS(th) - Threshold Voltage (V). 10. 2. 8. 6. 4. 1. 2. 0. 75 50 25 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 20. TC - Case Temperature ( C) G001. VGS - Gate-to- Source Voltage (V) G001. Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage 100. VGS = TC = 25 C. ISD Source-to-Drain Current (A). Normalized On-State Resistance VGS = 10V TC = 125 C. 10. 2. 1. 1. ID = 100A. 75 50 25 0 25 50 75 100 125 150 175 200 0 1. TC - Case Temperature ( C) G001. VSD Source-to-Drain Voltage (V) G001. Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Copyright 2012 2014, Texas Instruments Incorporated Submit Documentation Feedback 5. Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014 Typical MOSFET Characteristics (continued).

8 (TA = 25 C unless otherwise stated). 5000 100. 10us 1ms DC. IAV - Peak Avalanche Current (A). IDS - Drain-to-Source Current (A). 1000 100us 10ms 100. 10. 1. Single Pulse TC = 25 C. Max RthetaJC = C/W TC = 125 C. 10. 1 10 100 1. VDS - Drain-to-Source Voltage (V) G001 TAV - Time in Avalanche (mS) G001. Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching 120. IDS - Drain- to- Source Current (A). 100. 80. 60. 40. 20. 0. 50 25 0 25 50 75 100 125 150 175 200. TC - Case Temperature ( C) G001. Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright 2012 2014, Texas Instruments Incorporated Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014. 6 Device and Documentation Support Trademarks NexFET is a trademark of Texas Instruments. Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

9 Glossary SLYZ022 TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Copyright 2012 2014, Texas Instruments Incorporated Submit Documentation Feedback 7. Product Folder Links: CSD18532 KCS. CSD18532 KCS. SLPS361B AUGUST 2012 REVISED JULY 2014 7 Mechanical Data The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. KCS Package Dimensions Notes: 1. All linear dimensions are in inches. 2. This drawing is subject to change without notice. 3. Lead dimensions are not controlled within 'C' area. 4. All lead dimensions apply before solder dip. 5. The center lead is in electrical contact with the mounting tab. 6. The chamfer at 'F' is optional 7. Thermal pad contour at 'G' optional with these dimensions 8.

10 'H' Falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length, and maximum body length. Pin Configuration Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source 8 Submit Documentation Feedback Copyright 2012 2014, Texas Instruments Incorporated Product Folder Links: CSD18532 KCS. PACKAGE OPTION ADDENDUM. 30-Apr-2016. PACKAGING INFORMATION. Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp ( C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5). CSD18532 KCS ACTIVE TO-220 KCS 3 50 Pb-Free CU SN N / A for Pkg Type -55 to 150 CSD18532 KCS. (RoHS). (1). The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.