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Data Sheet Au Bump - LBSemicon

Rev Date: 8/17 Data Sheet _ au bump l 2 au bump Overview Gold bumped wafer will be applied on TCP (Tape Carrier Package), COG (Chip on Glass), COF(Chip on Film) package primarily for consumer products. It is designed to replace wire bond technology .The gold bumped chip will be mounted on the package through thermal compression method. As the requirement in high I/O, flex interconnection, thin, lightweight packaging increase, gold bumped wafers become more suitable to these portable products. Application COF and COG package for TV, Monitor, Notebook DDIC, Mobile, Tablet, Automotive Process capability 8inc and 12inch wafer available Au Bumping process Various hardness available from 50Hv up to 90Hv Low level : 50 20Hv Middle Level : 75 20Hv High level : 90 20Hv Bump height

www.lbsemicon.com l www.facebook.com/lbsemicon2017 2 Au Bump Overview Gold bumped wafer will be applied on TCP (Tape Carrier Package), COG (Chip on

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Transcription of Data Sheet Au Bump - LBSemicon

1 Rev Date: 8/17 Data Sheet _ au bump l 2 au bump Overview Gold bumped wafer will be applied on TCP (Tape Carrier Package), COG (Chip on Glass), COF(Chip on Film) package primarily for consumer products. It is designed to replace wire bond technology .The gold bumped chip will be mounted on the package through thermal compression method. As the requirement in high I/O, flex interconnection, thin, lightweight packaging increase, gold bumped wafers become more suitable to these portable products. Application COF and COG package for TV, Monitor, Notebook DDIC, Mobile, Tablet, Automotive Process capability 8inc and 12inch wafer available Au Bumping process Various hardness available from 50Hv up to 90Hv Low level : 50 20Hv Middle Level : 75 20Hv High level : 90 20Hv Bump height (typical) : 8 to 16um Height uniformity WID : 2um WIW : 2um Bump pitch (min).

2 Straight 21um, Staggered 13um BOA(bump on active circuit) structure qualified 2D, 3D AOI l 3 COG (Backend) process Back-grinding thickness(min) : 150um Thickness variation in a chip : 2um Scribe lane (min) : 60um (laser grooving available) Die strength (3point bending test) : > 400 MPa Die length (max) : 33mm Die width (min) : Die width and Length Ration : 1: 55 Design rule au bump l 4 Reliability _ Component level Temperature cycle : -65 C~ 125 C, 200 cycles High temperature storage : 125 C, 1000 hours Pressure Cooker Test : 121 C/100% RH, 96 hours Questions?

3 Contact us : au bump


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