DMG1029SV Product Summary Features and Benefits

1 DMG1029SV Document number: DS35421 Rev. 3 - 2 1 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product SOT563 complementary PAIR enhancement MODE MOSFET Product Summary Device V(BR)DSS RDS(ON) max ID max TA = +25 C Q1 60V @ VGS = 10V 500mA 3 @ VGS = 400mA Q2 -60V 4 @ VGS = -10V -360mA 6 @ VGS = -310mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT563 Case Material: Molded Plastic, "Green" Molding Compound.

2 UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: grams (approximate) Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMG1029SV -7 Standard SOT563 3000/Tape & Reel DMG1029 SVQ-7 Automotive SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at 5. Automotive products are AEC-Q101 qualified and are PPAP capable.

3 Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Bottom View GA1 YMGA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) S2D2 Q1Q2D1S1G2G1e3 DMG1029SV Document number: DS35421 Rev. 3 - 2 2 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product Maximum Ratings N-CHANNEL Q1 (@TA = +25 C, unless otherwise specified.)

4 Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25 CTA = +70 C ID 500 400 mA t<10s TA = +25 CTA = +70 C ID 620 480 mA Pulsed Drain Current (Note 7) IDM 1000 mA Maximum Ratings P-CHANNEL Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25 CTA = +70 C ID -360 -280 mA t<10s TA = +25 CTA = +70 C ID -410 -320 mA Pulsed Drain Current (Note 7) IDM -650 mA Thermal Characteristics (@TA = +25 C, unless otherwise specified.)

5 Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25 C PD W TA = +70 C Thermal Resistance, Junction to Ambient (Note 6) Steady state R JA 281 C/W t<10s 210 Total Power Dissipation (Note 7) TA = +25 C PD 1 W TA = +70 C Thermal Resistance, Junction to Ambient (Note 7) Steady state R JA 129 C/W t<10s 97 Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6 DMG1029SV Document number: DS35421 Rev. 3 - 2 3 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product Electrical Characteristics N-CHANNEL Q1 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current @TC = +25 C IDSS 10 nA VDS =50V, VGS = 0V Gate-Source Leakage IGSS 50 nA VGS = 5V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 500mA 3 VGS = , ID = 200mA Forward Transfer Admittance |Yfs| 80 mS VDS = 10V, ID = 200mA Diode Forward Voltage VSD V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 9)

7 Input Capacitance Ciss 30 pF VDS = 25V, VGS = 0V, f = Output Capacitance Coss pF Reverse Transfer Capacitance Crss pF Total Gate Charge Qg nC VGS = , VDS = 10V, ID = 250mA Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Turn-On Delay Time tD(on) ns VDD = 30V, VGS = 10V, RG = 25 , ID = 200mA Turn-On Rise Time tr ns Turn-Off Delay Time tD(off) ns Turn-Off Fall Time tf ns Electrical Characteristics P-CHANNEL Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current @TC = +25 C IDSS -25 nA VDS = -50V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 5V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS (ON) 4 VGS = -10V, ID = -500mA 6 VGS = , ID = -200mA Forward Transfer Admittance |Yfs| 50 mS VDS = -25V, ID = -100mA Diode Forward Voltage VSD V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS (Note 9)

8 Input Capacitance Ciss 25 pF VDS = -25V, VGS = 0V, f = Output Capacitance Coss pF Reverse Transfer Capacitance Crss pF Total Gate Charge Qg nC VGS = , VDS = -10V, ID = -500mA Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Turn-On Delay Time tD(on) ns VDD = -30V, VGS = -10V, RG = 50 , ID = -270mA Turn-On Rise Time tr ns Turn-Off Delay Time tD(off) ns Turn-Off Fall Time tf ns Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to Product testing. DMG1029SV Document number: DS35421 Rev. 3 - 2 4 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product N-CHANNEL Q1 V , DRAIN -SOURCE VOLTAGE(V)Fig. 1 Typical Output CharacteristicsDSI, DRAIN CURRENT (A)D0 01 , GATE-SOURCE VOLTAGE (V)GSFig. 2 Typical Transfer Characteristics01 23 , DRAIN CURRENT (A)DT = -55CA T = 25CA T = 85CA T = 125CA T = 150CA I , DRAIN SOURCE CURRENTFig.

9 3 Typical On-Resistance vs. Drain Current and Gate Voltage DR,DRAIN-SOURCE ON-RESISTANCE( )DS(ON) , DRAIN SOURCE CURRENT (A)Fig. 4 Typical On-Resistance vs. Drain Current and Temperature DR, DRAIN-SOURCE ON-RESISTANCE( )DS(ON) = -55CA T = 25CA T = 85CA T = 125CA T = 150CA -50-250255075100 125150T , JUNCTION TEMPERATURE ( C)J Fig. 5 On-Resistance Variation with TemperatureR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V , GATE-SOURCE VOLTAGE (V)GSFig. 6 Static Drain-Source On-Resistance VoltageR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0123456704 8121620I =150mADI =300mAD DMG1029SV Document number: DS35421 Rev. 3 - 2 5 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product , SOURCE-DRAIN VOLTAGE (V)SDFig. 7 Diode Forward Voltage vs. , SOURCE CURRENT (A)ST= 25 CA T = -55 CA T= 85 CA T = 125 CA T = 150 CA V , DRAIN-SOURCE VOLTAGE (V)Fig. 8 Typical Junction CapacitanceDSC, JUNCTION CAPACITANCE (pF)Tf = 1 MHz0 10 20 30 40 50 05101520 CISSCOSSCRSS DMG1029SV Document number: DS35421 Rev.

10 3 - 2 6 of 9 August 2013 Diodes Incorporated DMG1029 SVNEW Product P-CHANNEL Q2 2 3 45-V , DRAIN -SOURCE VOLTAGE (V)Fig. 9 Typical Output CharacteristicsDS-I , DRAIN CURRENT (A)DV= V= V= V= V= V= -10 VGS 450-V , GATE-SOURCE VOLTAGE (V)GSFig. 10 Typical Transfer Characteristics-I , DRAIN CURRENT (A)DT = 150CA T = 125CA T = 85CA T = 25CA T = -55CA V= , DRAIN SOURCE CURRENT (A)Fig. 11 Typical On-Resistance vs. Drain Current and Gate Voltage DR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = = -10 VGSV = 2 4 6 8 101214 161820V , GATE-SOURCE VOLTAGE (V)GSFig. 12 Typical Drain-Source On-Resistance vs. Gate-Source VoltageR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I = 100mAD , DRAIN SOURCE CURRENT (A)Fig. 13 Typical On-Resistance vs. Drain Current and Temperature DR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) T = -55CA T = 25CA T = 85CA T = 125 CA T = 150 CA V= 125 150T , JUNCTION TEMPERATURE ( C)J Fig. 14 On-Resistance Variation with TemperatureR, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)DS(ON)V = -10VI = -500mAGSDV = = -500mAGSD DMG1029SV Document number: DS35421 Rev.