DMP3099L - Diodes Incorporated

1 DMP3099L Document number: DS36081 Rev. 3 - 2 1 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) max ID max TA = +25 C -30V 65m @ VGS = -10V 99m @ VGS = Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting Power Management Functions DC-DC Converters Features and Benefits Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: grams (approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DMP3099L -7 Standard SOT23 3000/Tape & Reel DMP3099L -13 Standard SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Top View DGSTop View Pin Configuration D99= Product Type Marking Code YM = Date Code Marking Y = Year (ex.)

4 V = 2008) M = Month (ex: 9 = September) Equivalent Circuit D99 YMe3 DMP3099L Document number: DS36081 Rev. 3 - 2 2 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 20 V Drain Current (Note 5) VGS = -10V Steady State TA = +25 CTA = +70 CID A Pulsed Drain Current (Note 6)

5 IDM -11 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient @TA = +25 C (Note 5) R JA 115 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.)

6 Characteristic SymbolMinTypMaxUnit Test ConditionOFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS(ON) 65 99 m VGS = -10V, ID = VGS = , ID = Forward Transfer Admittance |Yfs| S VDS = -5V, ID = Diode Forward Voltage (Note 6) VSD V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 563 pF VDS = -25V, VGS = 0V, f = Output Capacitance Coss 48 pF Reverse Transfer Capacitance Crss 41 pF Gate Resistance RG VGS = 0V VDS = 0V, f = 1 MHz SWITCHING CHARACTERISTICS (Note 8)

7 Total Gate Charge Qg nC VDS = -15V, VGS = , ID = 11 VDS = -15V, VGS = -10V, ID = Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) ns VDS = -15V, VGS = -10V, ID = -1A, RG = Rise Time tr Turn-Off Delay Time td(off) 31 Fall Time tf 15 Notes: 5. Device mounted on FR-4 PCB on 2 oz., copper pads and t 5 sec. 6. Pulse width 10 S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3099L Document number: DS36081 Rev. 3 - 2 3 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT I, DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V)Figure 1 Typical Output CharacteristicsDSV= V= V= V= V= -10 VGS V= -V , GATE-SOURCE VOLTAGE (V)GSFigure 2 Typical Transfer Characteristics -I , DRAIN CURRENT (A)D0481216200123456V= T = 150 CAT = 125 CAT = 85 CAT = 25 CAT = -55 CA I , DRAIN-SOURCE CURRENT (A)D Figure 3 Typical On-Resistance vs.

8 Drain Current and Gate Voltage R, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V= -10 VGS -I , DRAIN CURRENT (A)DFigure 4 Typical On-Resistance vs. Drain Current and TemperatureR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 8121620T = -55 CAT = 25 CAT = 85 CAT = 125 CAT = 150 CAV= T , AMBIENT TEMPERATURE ( C)Figure 5 On-Resistance Variation with TemperatureA R, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)DS(ON) 0 25 50 75100125150V = = = -10VI = , JUNCTION TEMPERATURE ( C)Figure 6 On-Resistance Variation with TemperatureJ R, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 125 150V= V=VI= 10 DMP3099L Document number: DS36081 Rev. 3 - 2 4 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT T , AMBIENT TEMPERATURE ( C)Figure 7 Gate Threshold Variation vs.

9 Ambient TemperatureA V, GATE THRESHOLD VOLTAGE (V)GS(th) 150I= -1mAD I = -250 AD V , SOURCE-DRAIN VOLTAGE (V)SDFigure 8 Diode Forward Voltage vs. CurrentI, SOURCE CURRENT (A) 25 CA V , DRAIN-SOURCE VOLTAGE (V)DSFigure 9 Typical Junction CapacitanceC, JUNCTION CAPACITANCE (pF)T101001000051015202530f = 1 MHzCissCossCrssQ(nC)g, TOTAL GATE CHARGE Figure 10 Gate ChargeV GATE THRESHOLD VOLTAGE (V)GS012345678910024681012V= 15VI= ADSD DMP3099L Document number: DS36081 Rev. 3 - 2 5 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT Package Outline Dimensions Please see AP02002 at for latest version. Suggested Pad Layout Please see AP02001 at for the latest version.

10 SOT23 Dim Min Max Typ A B C D F G H J K K1 - - L M 0 8 - All Dimensions in mm Dimensions Value (in mm)Z X Y C E AMJLDFBCHKGK1 XEYCZ DMP3099L Document number: DS36081 Rev. 3 - 2 6 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT IMPORTANT NOTICE Diodes Incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).