黄光制程简介 - gdt-touch.com

1 Litho Litho Litho (Thin film) (Photo) (Etch) (Implant) (Diffusion) (Clean) (CMP) (Clean) (Clean)Litho ?LithoMaterialSelectionImprovedAD chamberAdditionalPreFilterTRACKC leaningSystemSeparationLithography AreaOther AreaNH3- Clean Room - Clean Wave Length Control Class100 within100( )/f3( )LithoPhoto in-line process flow overviewDefinition:PhotolithographyIt s pattern printing process on the resist coated wafer by UV exposure and pattern designed mask(Reticle).WaferFilmFilm DepositionWaferFilmPhoto resistResist CoatWaferFilmPhoto resistUV ExposurehvReticleWafer DevelopingFilmWaferEtchGasEE / FOOL Base Line / FBMix & Match(System)Pattern Size ControlPattern Profile ControlAlign Control between layerPhotoJOBFACTOR Process condition depends on which layer : Substrate condition,CD,Topology,OL target,Etch targetetc Key process factor : Tpr(A),Use BARC or not,SB,TARC or not,WEE,EE,FO,OL offset,PEB,Dev.

2 Dipping time and so on. Key machine factor : Cup exhaust pressure,Water jacket control temp,Chamber pressure,Temp,focus,Plate exhaust,PEB temp Accuracy. [1] General FlowLithoPhoto in-line process flow overviewHMDS coatCooling1PR Coat(**)Soft BakeCooling2 WEE($)EGA align ExposureHard ($$)Scope($$$)OL measureCD measureIon ImpEtchReworkDepositionEXPOSURETRACKPR stripIN-LINEC oolingBARCTARC(**)BAKE(*)2-24 HHP2-14 HHP3-243-14 LHP2-23 HHP2-13 HHP3-23 CHP3-13 LHP W EE 1-32-22 LHP2-12 LHP3-22 CHP3-12 LHP CST st age2-21 CPL2-11 CPL3-21 CHP3-11 CPL 4-42-202-10 CWH3-203-10 1-02-19 CPL2-29 LHP2-9 CPL3-19 CHP3-9 CPL2-82-28 LHP 2-18 SHU3-18 4-0 4-5 1-22-7 ADH2-27 LHP 2-17 SHU3-27 LHP3-17 CPL CST stage2-6 TRS2-26 LHP2-163-26 LHP3-16T RS2-5 TCP2-25 LHP2-15 ADH3-25 LHP3-15 CPL CST st age2-03-0 4-3(Buff) 1-1 2-3 ARC 2-4 ARC 3-3 3-4 4-2(Buff) 2-1 PR 2-2 PR 3-1 3-2 4-1(Buff)stepper(*) Absolutely we remove moisture on the wafer before BARC coating : Secondary reaction (**) EBR is not absolute process.

3 We can use WEE instead of EBR ==> Need recipe tuning(**) TARC should be coated after PR bake(Soft bake) : Do not TARC bake(Secondary reaction)($) We can change from before exposure to after exposure for I-line,but DUV cannot.($$) PED control is very importantto maintain process performance for DUV,but I-line isn t.($$$) ADI procedure is important to reduce ADI loss : Scope ==> OL ==> CDBAKEL itho , : Litho Litho1. ( Photoresist) PHOTO process (Mask) etch implant etch implant wafer 2. ( Positive photoresist) ( Negative photoresist) (Developer) Litho : Used to resist etch.

4 Used to resist ion implantation. Accurately aligned to other patterns. Critically sized. Litho . 6 : (DEHYDRATION), . Litho 2 : (ADHERSION), (HMDS) . HMDSL itho 3 : (COOLING), . Litho 4 : (COATING), . (Edge Bead Removal) Litho 5 : (SOFTBAKE), . Litho 6 : (COOLING), . Litho Litho LightReticleLensResistWafer Litho : DUV ( =248) ; I-line ( =365nm) : ( scanner ); (STEPPER)Litho66++++FiducialTest KeyTest LineMain PatternScribe LineGlobal MarkQA CellBarcode ? (Pattern Litho : Developer is used to chemically develop the photoresist pattern on exposed wafers.)

5 The basic developer reacts with the exposure-induce carboxylic acid : 1 , (PEB), . Litho 2 , (COOLING), :Litho 3 , (DEVELOPING).. :Litho 4 , (HARDBAKE).. :Litho 5 , (COOLING), :Litho 4 , 3 . OVERLAY CD SEM ADI INSPECTION RESIST THICKNESS MEASUREMENTL ithoOVERLAY ------ . : LithoCD-SEM ----- . :LithoADI INSPECTION ----- , . :Litho ----- Litho (Dehydration) (HMDS) (Cooling) (Coating) (Softbake) (PEB) Overlay CD SEM ADI (Exposure) (Reticle) (Developing) (Hardbake)Litho1. (Duv,I-line,g-line) ASML scanner :LithoScannerStepperLitho ( scanner ,Stepper) 1.

6 Stepper Cannon iZ01 2 . scanner Cannon ES3 ,ASML /400 ,/750, /850,/1100 1 .I-Line 365nm (Hg-Arc) Cannon iZ01 ,ASML /400,2 . DUV 248nm ,193nm (Laser) Cannon ES3 ,ASML /750, /850,/1100 Litho ScannerLithoScanner 1 VariableNAREMAI maging OpticsInternalReticle MaskingQuartzRodMotorDriverZoomsigmalens esShutter/AttenuatorImaged Masking Blades ForMaximizing Usable Reticle AreaZoom Sigma Control for Highest Intensity & Throughput At All Illuminator SettingsAutomated Control of NA and Conventional/Annular Illumination For Optimum CD Control On Each Process LayerWaferReticleConventionalAnnularProj ection lens entrance pupil Hg arc lampEntrancePupilLithoScanner 2 LithoScanner Stepper 1 LithoExposure scanSlit scanPrescanSlit scanScan directionREMA blades closeScanning exposure fieldREMA blades openStages and LS settleWhat is a Scan?

7 A scan consists of four sections and something different happens during each rodWafer directionReticle directionREMA bladeREMA bladeCell to be of the Slit ScanLithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be the Slit ScanLithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be the Slit Scan (2)LithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be of the Slit Scan, Start of Exposure ScanLithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure ScanLithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure Scan (2)LithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure Scan (3)LithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensEnd of Exposure Scan, Start of Final Slit ScanLithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensFinal Slit ScanLithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensFinal Slit Scan (2)LithoCell to be rodWafer directionReticle directionREMA bladeREMA bladeLensEnd of Slit ScanLithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be FinishedLithoScanner Stepper 2 Litho