General Description Product Summary

1 AON7400A30V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)40A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS = )< 100% UIS Tested100% Rg TestedSymbolVDS The AON7400A combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as ahigh side switch in SMPS and General purposeapplications. RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G D SDFN 3x3 EPTop View Bottom View Pin 1 Top View12348765 VDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation APDSMWTA=70 C252TA=25 CID4028TC=25 CTC=100 CPower Dissipation BPDC ontinuous DrainCurrent3615A27 ATA=25 CIDSMATA=70 CV40V 20 Gate-Source VoltageDrain-Source Voltage30 Avalanche energy L= CmJAvalanche Current C12 Junction and Storage Temperature Range-55 to 150 CThermal CharacteristicsUnitsMaximum Junction-to-Ambient A C/WR JA3060100 Pulsed Drain Current CContinuous DrainCurrent GParameterTypMaxTC=25 C Rev.

2 August 2014 1 of 6 AON7400A SymbolMinTypMax UnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS100nAVGS(th)Gate Threshold (ON) m 1150 1380 pFCoss125 180 235pFCrss60105 Qg(10V)162024nCQg( ) (on) Transfer CapacitanceVGS=0V, VDS=15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageOn state drain currentID=250 A, VGS=0 VVGS=10V, VDS=5 VVGS=10V, ID=20 ARDS(ON)Static Drain-Source On-ResistanceIDSS AVDS=VGS ID=250 AVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentGate-Body leakage currentm IS=1A,VGS=0 VVDS=5V, ID=20 AVGS= , ID=20 AForward TransconductanceDiode Forward VoltageV=10V, V=15V, R= ,Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=10V, VDS=15V, ID=20 AGate Source ChargeGate Drain ChargeTotal Gate ChargeMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise Timetr2nstD(off) 16nCCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

3 AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE Product DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , dI/dt=500A/ sBody Diode Reverse Recovery TimeVGS=10V, VDS=15V, RL= ,RGEN=3 Turn-Off Fall TimeBody Diode Reverse Recovery ChargeIF=20A, dI/dt=500A/ sTurn-On Rise TimeTurn-Off DelayTimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s value and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedence from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev : August 2014 2 of 6 AON7400A TYPICAL ELECTRICAL AND THERMAL 1 2 3 4 5 (A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)24681012051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) 100 125 150 175 Normalized On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= (Note E) + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)0510152025246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=20A25 C125 C Rev : August 2014 3 of 6 AON7400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS175210018024681005101520 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800100012001400 1600051015202530 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-CossCrssVDS=15 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s10ms1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11.

6 Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseOperating Area (Note F)R JC=5 C/W Rev : August 2014 4 of 6 AON7400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS175210018101001101001000 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)0510152025300255075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)010203040500255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F)TA=25 (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=75 C/W Rev : August 2014 5 of 6 AON7400A -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr Rev : August 2014 6 of 6