Transcription of High Performance Schottky Rectifier, 3 A - Vishay
1 Semiconductors Revision: 13-Sep-101 Document Number: 93360 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Performance Schottky Rectifier, 3 AFEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see VS-30BQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards.
2 Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery SUMMARYP ackageSMCIF(AV) AVR100 VVF at VIRM5 mA at 125 CTJ CDiode variationSingle mJCathodeAnodeSMCMAJOR RATINGS AND CHARACTERISTICSSYMBOLCHARACTERISTICSVALU ESUNITSIF(AV)Rectangular = 5 s Apk, TJ = 125 to +175 CVOLTAGE RATINGSPARAMETERSYMBOLVS-30BQ100-M3 UNITSM aximum DC reverse voltageVR100 VMaximum working peak reverse voltageVRWMABSOLUTE MAXIMUM RATINGSPARAMETERSYMBOLTEST CONDITIONSVALUESUNITSM aximum average forward currentIF(AV)50 % duty cycle at TL = 148 C, rectangular % duty cycle at TL = 138 C, rectangular peak one cycle non-repetitive surge currentIFSM5 s sine or 3 s rect.
3 PulseFollowing any rated load condition and with rated VRRM applied80010 ms sine or 6 ms rect. pulse70 Non-repetitive avalanche energyEASTJ = 25 C, IAS = A, L = 6 avalanche currentIARC urrent decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = x VR Semiconductors Revision: 13-Sep-102 Document Number: 93360 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse width = 300 s, duty cycle = 2 %Notes(1) thermal runaway condition for a diode on its own heatsink(2)Mounted 1" square PCBELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSVALUESUNITSM aximum forward voltage dropVFM (1)3 ATJ = 25 ATJ = 125 reverse leakage currentIRMTJ = 25 CVR = Rated = 125 junction capacitanceCTVR = 5 VDC (test signal range 100 kHz to 1 MHz)
4 , 25 C115pFTypical series inductanceLSMeasured lead to lead 5 mm from package voltage rate of change dV/dtRated VR10 000V/ sTHERMAL - MECHANICAL SPECIFICATIONSPARAMETERSYMBOLTEST CONDITIONSVALUESUNITSM aximum junction and storage temperature rangeTJ (1), TStg-55 to +175 CMaximum thermal resistance, junction to leadRthJL (2)DC operation12 C/WMaximum thermal resistance, junction to ambientRthJA46 Approximate deviceCase style SMC (similar to DO-214AB)3 JdPtotdTJ-------------1 RthJA--------------< Semiconductors Revision: 13-Sep-103 Document Number: 93360 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)Fig.
5 2 - Typical Values of Reverse Current Voltage (Per Leg)Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) - Instantaneous Forward Current (A) VFM - Forward Voltage Drop (V) = 175 CTJ = 125 CTJ = 25 IR - Reverse Current (mA)VR - Reverse Voltage (V)204060800100TJ = 175 CTJ = 125 C TJ = 100 CTJ = 50 CTJ = 75 CTJ = 25 CTJ = 150 C101001000CT - Junction Capacitance (pF) VR - Reverse Voltage (V)2040600TJ = 25 10 - Rectangular Pulse Duration (s)ZthJC - Thermal Impedance ( C/W)110010 Single pulse(thermal resistance)D = = = = = .PDMt1t2 Notes:1. Duty factor D = t1/t22. Peak TJ = PDM x ZthJC + Semiconductors Revision: 13-Sep-104 Document Number: 93360 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 5 - Maximum Average Forward Current Lead TemperatureFig. 6 - Maximum Average Forward Dissipation Forward CurrentFig. 7 - Maximum Peak Surge Forward Current vs. Pulse DurationNote(1)Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR100120140160180 Allowable Lead Temperature ( C) IF(AV) - Average Forward Current (A)3450 DCSee note (1)Square wave (D = )80% rated Vr appliedD = = = = = Power Loss (W) IF(AV) - Average Forward Current (A) limitD = = = = = - Non-Repetitive Surge Current (A) tp - Square Wave Pulse Duration ( s)100100010 00010At any rated load conditionand with rated VRRM appliedfollowing Semiconductors Revision: 13-Sep-105 Document Number: 93360 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT INFORMATION TABLEORDERING INFORMATION (Example)PREFERRED P/NPREFERRED PACKAGE CODEMINIMUM ORDER QUANTITYPACKAGING DESCRIPTIONVS-30BQ100-M3/9AT9AT350013" diameter plastic tape and reelLINKS TO RELATED marking rating3-B = SMC4-Q = Schottky Q series5-Voltage rating (100 = 100 V)1- Vishay Semiconductors productDevice code513246VS-30BQ100 -M3-Environmental digit: -M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free6 Document Number: 95402 For technical questions within your region, please contact one of the : DimensionsVishay Semiconductors DIMENSIONS in inches (millimeters)Cathode bandDO-214AB (SMC) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )0 (0) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( ) Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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9 Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and Performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.
10 Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay .
