High-Speed Quad SPST CMOS Analog Switch

1 vishay SiliconixDG201 HSDocument Number: 70038S-71241 Rev. G, quad spst CMOS Analog SwitchFEATURES Fast Switching-tON: 38 ns Low On-Resistance: 25 Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: - 30 mABENEFITS Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP)APPLICATIONS Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching AvionicsDESCRIPTIONThe DG201HS is an improved monolithic device containingfour independent Analog switches.

2 It is designed to providehigh speed, low error switching of Analog signals. Combininglow on-resistance (25 ) with high speed (tON: 38 ns), theDG201HS is ideally suited for high speed data achieve high voltage ratings and superior switchingperformance, the DG201HS is built on a proprietaryhigh-voltage silicon-gate process. An epitaxial layerprevents Switch conducts equally well in both directions whenon, and blocks input voltages to the supply values, when BLOCK DIAGRAM AND PIN CONFIGURATION* Pb containing terminations are not RoHS compliant, exemptions may apply12345678161514131211109 Top ViewIN1IN2D1D2S1S2V-V+GNDNCS4S3D4D3IN4IN 3 Top ViewS1S2V-V+NCNCGNDNCS4S3 LCCNCIN3D3D4IN4 NCIN2D2D1IN1 Key9101112134567812319201415161718 Dual-In-Line.

3 SOIC and TSSOPL ogic "0" VLogic "1" V TRUTH TABLE LogicSwitch0 ON1 OFFA vailablePb-freeRoHS* Number: 70038S-71241 Rev. G, 25-Jun-07 vishay SiliconixDG201 HSNotes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current All leads welded or soldered to PC Derate 6 mW/ C above 75 Derate 12 mW/ C above 75 Derate mW/ C above 75 C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL)ORDERING INFORMATION Temp RangePackagePart Number- 40 to 85 C16-Pin Plastic DIPDG201 HSDJDG201 HSDJ-E316-Pin Narrow SOICDG201 HSDYDG201 HSDY-E3DG201 HSDY-T1DG201 HSDY-T1-E316-Pin TSSOPDG201 HSDQDG201 HSDQ-E3DG201 HSDQ-T1DG201 HSDQ-T1-E3 ABSOLUTE MAXIMUM RATINGSP arameter LimitUnit V+ to V- 44 VGND to V-25 Digital Inputsa, VS, VD(V-) - 4 to (V+) + 4 or30 mA, whichever occurs firstContinuous Current (Any Terminal)30mACurrent, S or D (Pulsed at 1 ms, 10 % duty cycle)100 Storage Temperature (A Suffix)

4 - 65 to 150 C(D Suffix)- 65 to 125 Power Dissipation (Package)b 16-Pin Plastic DIPc470mW16-Pin CerDIPd90016-Pin Narrow Body SOIC and TSSOPe600 LCC-20d900 Figure +5 VRegV+INXV-LevelShift/DriveDocument Number: 70038S-71241 Rev. G, SiliconixDG201 HSNotes: to PROCESS OPTION = 25 C, Full = as determined by the operating temperature values are for DESIGN AID ONLY, not guaranteed nor subject to production algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data by design, not subject to production VIN = input voltage to perform proper function.

5 SPECIFICATIONSa Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 VVIN = 3 V, VfTempb TypcA Suffix - 55 to 125 CD Suffix - 40 to 85 CUnit Mind MaxdMind MaxdAnalog SwitchAnalog Signal RangeeVANALOGFullV-V+V-V+VDrain-Source On-ResistancerDS(on)IS = - 10 mA, VD = VV+ = V, V- = - VRoomFull2550755075 rDS(on) MatchRoom3% Switch Off Leakage CurrentIS(off)V+ = V, V- = - V VD = V VS= V 1- 60160- 1- 20120nAID(off) 1- 60160- 1- 20120 Channel On Leakage CurrentID(on)

6 V+ = V, V- = - VVS = VD = 1- 60160- 1- 20120 Digital ControlInput, High , Low Voltage CapacitanceCINFull5pFInput Current IINH or IINLVIN under test = V, 3 VFull- 11- 11 ADynamic CharacteristicsTu r n - O n T i m etONRL = 1 k , CL = 35 pFVS = 10 V, VINH = 3 VSee Figure 2 RoomFull4860756075nsTurn-Off TimetOFF1 RoomFull3050705070tOFF2 Room150 Output Settling Time to %tsRoom180 Charge InjectionQCL = 1 nF, VS = 0 VVgen = 0 V, Rgen = 0 Room- 5pCOff IsolationOIRRRL = 1 k , CL = 10 pFf = 100 kHz Room85dBCrosstalk(Channel-to-Channel)XTA L KAny Other Channel SwitchesRL = 1 k , CL = 10 pFf = 100 kHzRoom100 Source Off CapacitanceCS(off)VS , VD = 0 V, f = 1 MHzRoom8pFDrain Off CapacitanceCD(off)Room8 Channel On CapacitanceCD(on)Room30 Drain-to-Source CapacitanceCDS(off) SuppliesPositive Supply CurrentI+V+ = 15 V, V- = - 15 V VIN = 0 or 5 V Supply 6- 6 Power Number: 70038S-71241 Rev.

7 G, 25-Jun-07 vishay SiliconixDG201 HSNotes: to PROCESS OPTION = 25 C, Full = as determined by the operating temperature Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data by design, not subject to production VIN = input voltage to perform proper function. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

8 Exposure to absolute maximumrating conditions for extended periods may affect device FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Specified V+ = V to V, V- = GND = 0 V, VIN = 3 V, VfTempb TypcA Suffix - 55 to 125 CD Suffix - 40 to 85 CUnit Mind MaxdMind MaxdAnalog SwitchAnalog Signal RangeeVANALOGFull0V+0V+VDrain-Source On-ResistancerDS(on)IS = - 10 mA, VD = VV+ = VRoomFull659012090120 Switch Off Leakage CurrentIS(off)V+ = V VS= V, 10 V VD = 10 V, 1- 60160- 1- 20120nAID(off) 1- 60160- 1- 20120 Channel On Leakage CurrentID(on) + IS(on)

9 V+ = VVD = V, 10 1- 60160- 1- 20120 Digital ControlInput, High , Low Voltage CapacitanceCINFull5pFInput Current IINH or IINLV+ = VVIN under test = V, 3 VFull- 11- 11 ADynamic CharacteristicsTu r n - O n T i m etONRL = 1 k , CL = 35 pFVS = 2 V, V = VSee Figure 2 RoomFull50705070nsTu r n - O f f T i m etOFF1 RoomFull50705070tOFF2 Room150 Output Settling Time to %tsRoom180 Charge InjectionQCL = 1 nF, VS = 0 VVgen = 0 V, Rgen = 0 Room10pCOff IsolationOIRRRL = 1 k , CL = 10 pFf = 100 kHz Room85dBCrosstalk(Channel-to-Channel)XTA L KAny Other Channel SwitchesRL = 1 k , CL = 10 pFf = 100 kHzRoom100 Source Off CapacitanceCS(off)f = 1 MHzRoom10pFDrain Off CapacitanceCD(off)Room10 Channel On CapacitanceCD(on)VANALOG = 0 VRoom30 Power SupplyPositive Supply CurrentI+V+ = 15 V, VIN = 0 or 5 VFull1010mAPower ConsumptioncPCFull150150mWDocument Number: 70038S-71241 Rev.

10 G, SiliconixDG201 HSTYPICAL CHARACTERISTICS 25 C, unless otherwise notedrDS(on) vs. VD and Power Supply VoltagesrDS(on) vs. VD and Single Power Supply VoltagesInput Switching Threshold vs. Supply Voltage- 20 - 16 - 12 - 8- 4048121620010203040506070 5 VVD Drain Voltage (V) 10 V 15 V 20 VrDS(on) Drain-Source On-Resistance ( )0246810121416020406080100120140160180VD Drain Voltage (V)V+ = 5 V7 V10 V12 V15 VrDS(on) Drain-Source On-Resistance ( ) (V)THPositive Supplies (V)4 6 8 101214161820rDS(on) vs. VD and TemperatureLeakage Currents vs.