High Voltage Surface Mount Schottky Rectifier - …

1 SS29, General Semiconductor Revision: 23-Apr-20201 Document Number: 88749 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Voltage Surface - Mount Schottky RectifierLINKS TO ADDITIONAL RESOURCESFEATURES Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward Voltage drop high surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see APPLICATIONSFor use in low Voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection DATACase.

2 SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified ( _X denotes revision code A, B,..)Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker testPolarity: color band denotes the cathode endPRIMARY CHARACTERISTICSIF(AV) AVRRM90 V, 100 VIFSM75 VTJ CPackageSMB (DO-214AA)Circuit configurationSingleSMB (DO-214AA)CathodeAnode333 DDD3D3D ModelsAvailableMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLSS29SS210 UNITD evice marking codeS9S10 Maximum repetitive peak reverse voltageVRRM90100 VMaximum RMS voltageVRMS6370 VMaximum DC blocking voltageVDC90100 VMaximum average forward rectified current (fig.)

3 1)IF(AV) forward surge current ms single half sine-wave superimposed on rated loadIFSM75 APeak repetitive reverse surge current at tp = 2 s, 1 rate of change (rated VR)dV/dt10 000V/ sOperating junction and storage temperature rangeTJ, TSTG-55 to +150 CSS29, General Semiconductor Revision: 23-Apr-20202 Document Number: 88749 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycleNote(1)PCB mounted with " x " ( mm x mm) copper pad areasNote(1)AEC-Q101 qualifiedELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST CONDITIONSSYMBOLSS29SS210 UNITM aximum instantaneous forward Voltage (1)IF = ATA = 25 = = = ATA = 100 = DC reverse current at rated VR (1)TA = 25 CIR30 ATA = 100 C5mATHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLSS29SS210 UNITM aximum thermal resistance (1)R JA85 C/WR JL25 ORDERING INFORMATION (Example)PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODESS210-E3 " diameter plastic tape and reelSS210-E3 " diameter plastic tape and reelSS210HE3_A/H (1) " diameter plastic tape and reelSS210HE3_A/I (1)

4 " diameter plastic tape and reelSS29, General Semiconductor Revision: 23-Apr-20203 Document Number: 88749 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Forward Current Derating CurveFig. 2 - Forward Power Loss CharacteristicsFig. 3 - Maximum Non-Repetitive Peak Forward Surge CurrentFig. 4 - Typical Instantaneous Forward CharacteristicsFig. 5 - Typical Reverse Leakage CharacteristicsFig. 6 - Typical Junction Forward Current (A)Lead Temperature ( C)Resistive or Inductive LoadPCB Mounted " x " ( mm x mm)Copper Pad = = = = = = Forward Current (A)Average Power Loss (W)D = tp/TtpT0255075100110100 Number of Cycles at 60 HzPeak Forward Surge Current (A) Title2nd lineInstantaneous Forward Current (A)Instantaneous Forward Voltage (V)TJ= 150 CTJ= 125 CTJ= -40 CTJ= 25 000102030405060708090 100 Axis Title1st line2nd lineInstantaneous Reverse Current ( A)Percent of Rated Peak Reverse Voltage (%)TJ= 150 CTJ= 125 CTJ= -40 CTJ= 25 Voltage (V)Junction Capacitance (pF)SS29, General Semiconductor Revision: 23-Apr-20204 Document Number: 88749 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )SMB (DO-214AA)0 (0)Cathode ( ) ( ( )MIN. ( ) Pad LayoutLegal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.)

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