SS26 - Surface Mount Schottky Power Rectifier

1 Semiconductor Components Industries, LLC, 2013 December, 2019 Rev. 71 Publication Order Number:SS26/DSurface MountSchottky Power RectifierSMB Power Surface Mount PackageSS26T3G, NRVBSS26T3G,NRVBSS26NT3G,SRVBSS26NT3G.. employing the Schottky Barrier principle in a metal to siliconpower Rectifier . Features epitaxial construction with oxide passivationand metal overlay contact. Ideally suited for low voltage , highfrequency switching Power supplies; free wheeling diodes andpolarity protection Compact Package with J Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Overvoltage Protection Low Forward voltage Drop NRVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable* Pb Free Package is AvailableMechanical Characteristics: Case: Molded Epoxy Epoxy Meets UL 94, V O at in Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes:260 C Max.

2 For 10 Seconds Available in 12 mm Tape, 2500 Units per 13 Reel, Add T3 Suffixto Part Number Finish: All External surfaces Corrosion Resistant and TerminalLeads are Readily Solderable ESD Ratings: Human Body Model = 3 BMachine Model = C Marking: SS26 Shipping Schottky AMPERES60 VOLTSMARKING For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.**The Assembly Location code (A) is front sideoptional. In cases where the Assembly Location isstamped in the package bottom (molding ejecter pin),the front side assembly code may be Specific Device CodeA= Assembly Location**Y= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)SMBCASE 403 AAYWWSS26 GGDevicePackageORDERING INFORMATIONSS26T3 GSMB(Pb Free)2500 / Tape & ReelNRVBSS26T3G*SMB(Pb Free)2500 / Tape & ReelNRVBSS26NT3G*SRVBSS26NT3G*SMB(Pb Free)SMB(Pb Free)2500 / Tape & Reel2500 / Tape & ReelSS26T3G, NRVBSS26T3G, NRVBSS26NT3G, RATINGSR atingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR60 VAverage Rectified Forward Current(At Rated VR, TL = 95 C) Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60Hz)IFSM40 AStorage/Operating Case TemperatureTstg, TC 55 to +150 COperating Junction TemperatureTJ 55 to +150 CVoltage Rate of Change(Rated VR, TJ = 25 C)dv/dt10,000V/msStresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolValueUnitThermal Resistance Junction to Lead (Note 1)Thermal Resistance Junction to Ambient (Note 2)RqJLRqJA2480 C/W1. Mounted with minimum recommended pad size, PC Board 1 inch square pad size (1 x inch for each lead) on FR4 CHARACTERISTICSC haracteristicSymbolValueUnitTJ = 25 CTJ = 125 CMaximum Instantaneous Forward voltage (Note 3)(iF = A)(iF = A) Instantaneous Reverse Current (Note 3)(VR = 60 V) parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 250 ms, Duty Cycle , NRVBSS26T3G, NRVBSS26NT3G, CHARACTERISTICSF igure 1.

4 Typical Forward VoltageIF, INSTANTANEOUS FORWARDCURRENT (A)VF, INSTANTANEOUS FORWARD voltage (V)Figure 2. Maximum Forward VoltageVF, INSTANTANEOUS FORWARD voltage (V)IF, INSTANTANEOUS FORWARDCURRENT (A)Figure 3. Typical Reverse CurrentIR, REVERSE CURRENT (A)VR, REVERSE voltage (V)Figure 4. Typical Capacitance10300204010C, CAPACITANCE (pF)VR, REVERSE voltage (V)506010025 Cf = 1 MHzTA = 75 CTA = 25 CTA = 125 = 150 CTA = 40 = 125 CTA = 75 CTA = 150 CTA = 25 CTA = 40 C0 07TA = 150 CTA = 125 CTA = 75 CTA = 25 CFigure 5. Current Derating Junction to LeadIF, AVERAGE FORWARD CURRENT (A)TL, LEAD TEMPERATURE ( C)Figure 6. Forward Power , AVERAGE Power DISSIPATION (W)IO, AVERAGE FORWARD CURRENT (A) 110 120 130 140 150dcSQUARE WAVERqJL = 24 C/WSS26T3G, NRVBSS26T3G, NRVBSS26NT3G, 7. Thermal Response Junction to CaseFigure 8. Thermal Response Junction to , TIME (s) + (t) = Rtjl*r(t)t, TIME (s) + 0450%20%10% , TRANSIENT THERMAL RESISTANCE (NORMALIZED)RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) (t) = Rtjl*r(t)SMBCASE 403A 03 ISSUE JDATE 19 JUL 2012 SCALE 1:1 EbDcL1 LAA1 NOTES:1.

5 DIMENSIONING AND TOLERANCING PER ANSI , CONTROLLING DIMENSION: DIMENSION b SHALL BE MEASURED WITHIN DIMENSION = Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free Package(Note: Microdot may be in either location)*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM* mminches SCALE 8:1*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* REFDL1 HESCALE 1:1 AYWWXXXXXGGPOLARITY INDICATOROPTIONAL AS NEEDEDP olarity BandNon Polarity BandPolarity BandNon Polarity BandMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

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