I2C Controlled Single Cell 3A Fast Charger for High …

1 14 VUSBICHGBATSENI2C BUSHost ControlCopyright 2016, texas instruments IncorporatedProductFolderOrderNowTechnic alDocumentsTools &SoftwareSupport &CommunityAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand MARCH2016 REVISEDMARCH2017bq25898CI2C ControlledSingleCell 3-A Chargerfor high Input Voltagein CompactDSBGAP ackage11 Features1 Operationas SlaveChargerto ProvideFastChargingin DualChargerOperation SimpleConfigurationwith MinimumBOM HighEfficiency3-A, 92%ChargeEfficiencyat 3 A and 94%ChargeEfficiencyat 2 A ChargeCurrent Optimizefor HighVoltageInput(9 V / 12 V) Low PowerPFMmodefor LightLoadOperations SingleInputto SupportUSBI nputand AdjustableHighVoltageAdapters 14-VInputVoltageRange InputCurrentLimit(100mA to with 50-mA resolution)to , HighVoltageAdapters WideInputDynamicPowerManagement(DPM)Rang e HighestBatteryDischargeEfficiencywith 5-m BatteryMOSFET DefaultChargeDisabled IntegratedADCfor SystemMonitor(Input,Systemand BatteryVoltage,Temperature,ChargeCurrent ) FlexibleAutonomousand I2C Modefor OptimalSystemPerformance RemoteBatterySensing HighIntegrationincludesall MOSFETs,CurrentSensingand LoopCompensation HighAccuracy 5% ChargeCurrentRegulation Safety ThermalRegulationand ThermalShutdown InputUVLO/OvervoltageProtection BatteryOVP SafetyTimer2 Applications SmartPhone TabletPC PortableInternetDevices3 DescriptionThebq25898 Cis a highly-integratedswitch-modebatterycharg emanagementand systempowerpathmanagementdevicefor singlecell low impedancepowerpathoptimizesswitch-modeop erationefficiency,reducesbatterycharging timeand extendsbatterylife bq25898 Cis availablein (1)

2 PARTNUMBERPACKAGEBODYSIZE(NOM)bq25898 CDSBGA(42) x (1) For all availablepackages,see the orderableaddendumatthe end of the MARCH2016 2016 2017,TexasInstrumentsIncorporatedTableof Contents1 Description(Continued)..36 Pin Configurationand Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryChangesfromRevisionA (December2016)to RevisionBPage Full datasheetto (March2016)to RevisionAPage AddedBatteryMOSFETto ChangedIntegratedADCfor Changedchargedisabledto bothfast chargeand ChangedPG to PG in Changedanodeto cathodein Changedcathodeto anodein DeletedI(BOOST) Changedfallingto risingin tACOV_RISING test conditionsin Changed128 mA to 0 mA (prechargedisabled)in Table2 ..16 Changed128 mA to 0 mA (prechargedisabled)in Table3 ..17 ChangedFastChargeCurrentfrom4032mA to 3008mA in Changedchargeto bothfast chargeand prechargein Table10.

3 29 Changed128mA(0001)to 0mAwhenREG04[5:0]= 000000in ChangedREG09bits 5 - 2 fromR/Wto R ..34 Changedbit 5 in Table15 ..34 ChangedREG0 Bbit1 fromx to 1 ..36 Addednoteto Figure40 .. MARCH2016 REVISEDMARCH2017 SubmitDocumentationFeedbackCopyright 2016 2017,TexasInstrumentsIncorporated5 Description(Continued)The bq25898 Cis a highly-integrated3-A switch-modebatterychargemanagementdevice for singlecell Li-Ionand a tiny and cost-effectivedevice,it can also be configuredas slavechargerto providefast chargingin dual featuresfast chargingwithhighinputvoltagesupportfor a widerangeof smartphone,tabletand low impedancepowerpathoptimizesswitch-modeop erationefficiency,reducesbatterycharging timeand extendsbatterylife solutionis highlyintegratedwithinputreverse-blockin gFET(RBFET,Q1), high -sideswitchingFET(HSF ET,Q2),low-sideswitchingFET(LSFET,Q3), also integratesthe bootstrapdiodefor the high -sidegatedriveand batterymonitorfor I2C serialinterfacewithchargingand systemsettingsmakesthedevicea truly devicesupportsa widerangeof inputsources,includingstandardUSBhostpor t,USBchargingport, set the defaultinputcurrentlimit,the devicetakesthe resultfromdetectioncircuitin the system,suchas deviceis compliantwith and powerspecwith inputcurrentand defaultchargecurrentis set to 0 mA (bothfast chargeand prechargedisabled).

4 Oncechargeis enabled,thedevicemay initiateand completea chargingcyclewith chargerprovidesvarioussafetyfeaturesfor batterychargingand systemoperations, junctiontemperatureexceeds120 C (programmable).TheSTAT outputreportsthe chargingstatusandany PG outputindicatesif a goodpowersourceis INT immediatelynotifieshostwhenfault deviceis availablein a x MARCH2016 2016 2017,TexasInstrumentsIncorporated6 Pin Configurationand FunctionsYFF Package42-PinDSBGATop View(1)DI (DigitalInput),DO (DigitalOutput),DIO (DigitalInput/Output),AI (AnalogInput),AO (AnalogOutput),AIO (AnalogInput/Output)Pin FunctionsPINTYPE(1) internaln-channelreverseblockMOSFET(RBFE T)is connectedbetweenVBUSand PMID with VBUSon 1-uFceramiccapacitorfromVBUSto PGNDand placeit as closeaspossibleto USBhost sourceand Low indicatesan the pull up rail via the inputvoltageis withinVVBUS_OP,aboveSLEEP modethreshold(VSLEEPZ),andcurrentlimit is aboveIBATSRC(30mA).

5 The INT to a logicrail via INT pin sendsactivelow, 256-uspulseto host to reportchargerdevicestatusand the logicrail througha 10-k the logicrail througha 10-k INT to a logicrail via 10-k INT pin sendsactivelow,256- s pulseto host to reportchargerdevicestatusand chargeenablepin. Batterychargingis enabledwhenCHG_CONFIG= 1 and CE pin = pinmustbe pulledHighor the positiveterminalof the internalcurrentsensingcircuitryisconnect edbetweenSYSand 10uFcloselyto the MARCH2016 REVISEDMARCH2017 SubmitDocumentationFeedbackCopyright 2016 2017,TexasInstrumentsIncorporatedPin Functions(continued)PINTYPE(1) internalcurrentsensingcircuitryis connectedbetweenSYSand 20uFcloselyto the ,C6-G6,A4,G2 PPowergroundconnectionfor ,PGNDis connectedto the sourceof the PCBlayout,connectdirectlyto groundconnectionof inputand outputcapacitorsof the singlepointconnectionis recommendedbetweenpowerPGNDand the analogGNDneartheIC is connectedto the sourceof the n-channelHSFETand the drainof the F bootstrapcapacitorfromSW to side ,the BTSTis connectedto the cathodeof the F bootstrapcapacitorfromSW to side ,REGNis connectedto the anodeof the F (10 V rating)

6 CeramiccapacitorfromREGNto capacitorshouldbeplacedcloseto the the drainof the reverseblockingMOSFET(RBFET)and the drainof totalinputcapacitance,put 1 F on VBUSto PGND,and the rest capacitanceon PMIDto typicalpin resistanceis 800 k . Connectas closeto batteryas possible.(1)Stressesbeyondthoselistedund erabsolutemaximumratingsmay causepermanentdamageto the stressratingsonly,and functionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder recommendedoperatingconditionsis not absolute-maximum-ratedconditionsfor extendedperiodsmay voltagevaluesare with respectto the (1)overoperatingfree-airtemperaturerange (unlessotherwisenoted)MINMAXVALUEV oltagerange(withrespectto GND)VBUS(converternot switching) 222 VPMID(converternot switching) 316 VBAT,SYS(converternot switching) ,SCL,INT, REGN,CE SW GND currentINT, STAT6mAPG6mAJunctiontemperature 40150 CStoragetemperaturerange,Tstg 65150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.

7 (2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (HBM),per ANSI/ESDA/JEDECJS-001(1) 2000 VChargeddevicemodel(CDM),per JEDEC specificationJESD22-C101(2) 250V6bq25898 CSLUSCH6B MARCH2016 2016 2017,TexasInstrumentsIncorporated(1)The inherentswitchingnoisevoltagespikesshoul dnot exceedthe absolutemaximumratingon eitherthe BTSTor SW (1)VIINI nputcurrent(VBUS) (SW) internalMOSFETUp to 6 (continuos)A9 (peak)(Up to 1 sec duration)ATAO peratingfree-airtemperaturerange 4085 C(1)For moreinformationabouttraditionaland new thermalmetrics,see (1)bq25898 CUNITYFF (DSBGA)42-BALLR C/WR JCtopJunction-to-case(top) C/WR C/W C/W C/WR JCbotJunction-to-case(bottom)thermalresi stanceN/A < VVBUS< VACOVand VVBUS> VBAT+ VSLEEP, TJ= 40 C to 125 C and TJ= 25 C for typicalvalues(unlessotherwisenoted)PARAM ETERTESTCONDITIONSMINTYPMAXUNITQUIESCENT CURRENTSIBATB atterydischargecurrent(BAT,SW, SYS)in buckmodeVBAT= V, V(VBUS)< V(UVLO), leakagebetweenBATand VBUS5 AHigh-ZMode,No VBUS,BATFETD isabled(REG09[5]= 1), BatteryMonitorDisabled,TJ< 85 C1223 AHigh-ZMode,No VBUS,BATFETE nabled(REG09[5]= 0), BatteryMonitorDisabled,TJ< 85 C3260 AI(VBUS_HIZ)Inputsupplycurrent(VBUS)in buckmodewhenHigh-Zmodeis enabledV(VBUS)= 5 V, high -ZMode,No Battery,BatteryMonitorDisabled1535 AV(VBUS)= 12 V, high -ZMode,No Battery,BatteryMonitorDisabled2550 AI(VBUS)Inputsupplycurrent(VBUS) in buckmodeVBUS> V(UVLO), VBUS> VBAT, > V(UVLO), VBUS> VBAT, Converterswitching,VBAT= ,ISYS= 0A3mAVBUS> V(UVLO), VBUS> VBAT, Converterswitching,VBAT= V, ISYS= 0 A3mAVBUS/BATPOWERUPV(VBUS_OP) (VBUS_UVLOZ)VBUSfor activeI2C, no (SLEEP)Sleepmodefallingthreshold2565120m VV(SLEEPZ)Sleepmoderisingthreshold130250 370mVV(ACOV)

8 MARCH2016 REVISEDMARCH2017 SubmitDocumentationFeedbackCopyright 2016 2017,TexasInstrumentsIncorporatedElectri calCharacteristics(continued)VVBUS_UVLOZ< VVBUS< VACOVand VVBUS> VBAT+ VSLEEP, TJ= 40 C to 125 C and TJ= 25 C for typicalvalues(unlessotherwisenoted)PARAM ETERTESTCONDITIONSMINTYPMAXUNITtACOV_FAL LINGACOV fallingdeglitchVVBUS falling1msVBAT(UVLOZ)Batteryfor activeI2C, no (DPL) (DPLZ) (VBUSMIN)Bad (BADSRC)Bad adapterdetectioncurrentsource30mAPOWER-P ATHMANAGEMENTVSYST ypicalsystemregulationvoltageI(SYS)= 0 A, VBAT> VSYS(MIN), BATFETD isabled(REG09[5]=1)VBAT+50 mVVIsys = 0 A, VBAT< VSYS(MIN), BATFETD isabled(REG09[5]=1)VSYS(MIN)+250 mVVVSYS(MIN)MinimumDC systemvoltageoutputVBAT< VSYS(MIN), SYS_MIN= V(REG03[3:1]= 101),ISYS= 0 (MAX)MaximumDC systemvoltageoutputVBAT= , SYS_MIN= V(REG03[3:1]= 101),ISYS= 0 (RBFET)Top reverseblockingMOSFET(RBFET)on-resistanc ebetweenVBUSand PMIDTJ= -40 C - 85 C2840m TJ= -40 C - 125 C2847m RON(HSFET)Top switchingMOSFET(HSFET)on-resistancebetwe enPMIDand SWTJ= -40 C - 85 C2433m TJ= -40 C - 125 C2440m RON(LSFET)BottomswitchingMOSFET(LSFET)on -resistancebetweenSW and GNDTJ= -40 C - 85 C1218m TJ= -40 C - 125 C1221m V(FWD)BATFET forwardvoltagein supplementmodeBATdischargecurrent10 mA30mVBATTERYCHARGERVBAT(REG_RANGE) (REG_STEP)Typicalchargevoltagestep16mVVB AT(REG)ChargevoltageresolutionaccuracyVB AT= (REG06[7:2]= 010111)orVBAT= (REG06[7.)]

9 2]= 100000)TJ= -40 C - 85 (CHG_REG_RANGE)Typicalfast chargecurrentregulationrange03008mAI(CHG _REG_STEP)Typicalfast chargecurrentregulationstep64mAI(CHG_REG _ACC)Fastchargecurrentregulationaccuracy VBAT= V or V, ICHG= 256 mATJ= -40 C - 85 C-20%20%VBAT= V or V, ICHG= 1792mATJ= -40 C - 85 C-5%5%VBAT(LOWV)BatteryLOWV fallingthresholdFastchargeto precharge,BATLOWV(REG06[1])= fast charge,BATLOWV(REG06[1])= 1(Typical200-mVhysteresis) precharge,BATLOWV(REG06[1])= fast charge,BATLOWV(REG06[1])= 0(Typical200-mVhysteresis) (PRECHG_RANGE)Prechargecurrentrange64102 4mAI(PRECHG_STEP)Typicalprechargecurrent step64mAI(PRECHG_ACC)Prechargecurrentacc uracyVBAT= V, IPRECHG= 256 mA 20%20%I(TERM_RANGE)Terminationcurrentran ge641024mAI(TERM_STEP)Typicaltermination currentstep64mAI(TERM_ACC)Terminationcur rentaccuracyITERM= 256 mA, ICHG 1344mATJ= -20 C - 85 C-20%20%ITERM= 256 mA, ICHG> 1344mATJ= -20 C - 85 C-20%20%V(SHORT) (SHORT_HYST)Batteryshortvoltagehysteresi sVBAT rising200mVI(SHORT)BatteryshortcurrentVB AT< V110mAV(RECHG)RechargethresholdbelowVBATREGVBAT falling,VRECHG(REG06[0]= 0) = 0100mVVBAT falling,VRECHG(REG06[0]= 0) = 1200mV8bq25898 CSLUSCH6B MARCH2016 2016 2017,TexasInstrumentsIncorporatedElectricalCharacteristics(continued)VVBUS_UVLOZ< VVBUS< VACOVand VVBUS> VBAT+ VSLEEP, TJ= 40 C to 125 C and TJ= 25 C for typicalvalues(unlessotherwisenoted)PARAM ETERTESTCONDITIONSMINTYPMAXUNITRON(BATFE T)SYS-BATMOSFET(BATFET)on-resistanceTJ= 25 C57m TJ= -40 C - 125 C510m RBATSENBATSEN inputresistance800k INPUTVOLTAGE/ CURRENTREGULATIONVIN(DPM_RANGE) (DPM_STEP)Typicalinputvoltageregulations tep100mVVIN(DPM_ACC)Inputvoltageregulati onaccuracyVINDPM= V, V, (DPM_RANGE)

10 Typicalinputcurrentregulationrange100325 0mAIIN(DPM_STEP)Typicalinputcurrentregul ationstep50mAIIN(DPM100_ACC)Inputcurrent 100mAregulationaccuracyVBAT= 5V, currentpulledfromSWIINLIM(REG00[5:0])= 100 mA8590100mAIIN(DPM_ACC)Inputcurrentregul ationaccuracyVBAT= 5V, currentpulledfromSWUSB150,IINLIM(REG00[5 :0])= 150 mA125135150mAUSB500,IINLIM(REG00[5:0])= 500 mA440470500mAUSB900,IINLIM(REG00[5:0])= 900 A, IINLIM(REG00[5:0])= 1500mA130014001500mAIIN(START)Inputcurre ntregulationduringsystemstartupVSYS= V, IINLIM(REG00[5:0]) 200 mA200mABATOVER-VOLTAGE/CURRENTPROTECTION VBAT(OVP)Batteryover-voltagethresholdVBA T rising,as percentageof VBAT(REG)104%VBAT(OVP_HYST)Batteryover-v oltagehysteresisVBAT falling,as percentageof VBAT(REG)2%IBAT(FET_OCP)Systemover-curre ntthreshold9 ATHERMALREGULATIONANDTHERMALSHUTDOWNTREG J unctiontemperatureregulationaccuracyREG0 8[1:0]= 11120 CTSHUTT hermalshutdownrisingtemperatureTemperatu rerising160 CTSHUT(HYS)ThermalshutdownhysteresisTemp eraturefalling30 CPWMFSWPWM switchingfrequency,and cycle97%REGNLDOV(REGN)REGNLDO outputvoltageV(VBUS)= 9 V, I(REGN)= 40 (VBUS)= 5 V, I(REGN)= 20 (REGN)REGNLDO currentlimitV(VBUS)= 9 V, V(REGN)= V50mAANALOG-TO-DIGITALCONVERTER(ADC)RESR esolutionRisingthreshold7bitsVBAT(RANGE) TypicalbatteryvoltagerangeV(VBUS)> VBAT+ V(SLEEP) (VBUS)< VBAT+ V(SLEEP) (BAT_RES)Typicalbatteryvoltageresolution20mVV(SYS_RANGE)TypicalsystemvoltagerangeV(VBUS)> VBAT+ V(SLEEP) (VBUS)< VBAT+ V(SLEEP) (SYS_RES)Typicalsystemvoltageresolution20mVV(VBUS_RANGE)TypicalVVBUS voltagerangeV(VBUS)> VBAT+ V(SLEEP) (VBUS_RES)TypicalVVBUS voltageresolution100mVIBAT