IRFB S SL3307 - Infineon Technologies

1 PD - 96901C. IRFB3307. IRFS3307. IRFSL3307. Applications HEXFET Power MOSFET. l High Efficiency Synchronous Rectification in SMPS. l Uninterruptible Power Supply D. VDSS 75V. : l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. Benefits G max. : l Improved Gate, Avalanche and Dynamic dV/dt S. ID 130A. Ruggedness l Fully Characterized Capacitance and Avalanche SOA. l Enhanced body diode dV/dt and dI/dt Capability GDS GDS GDS. TO-220AB D2 Pak TO-262. IRFB3307 IRFS3307 IRFSL3307. Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 130 c A. ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 91 c IDM Pulsed Drain Currentd 510.

2 PD @TC = 25 C Maximum Power Dissipation 250 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. dv/dt Peak Diode Recovery f 11 V/ns TJ Operating Junction and -55 to + 175 C. TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300. ( from case). Mounting torque, 6-32 or M3 screw x x 10lb in ( m). Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e 270 mJ. IAR Avalanche Current c See Fig. 14, 15, 16a, 16b A. EAR Repetitive Avalanche Energy g mJ. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Casek R CS Case-to-Sink, Flat Greased Surface , TO-220 C/W. R JA Junction-to-Ambient, TO-220 k 62.

3 R JA Junction-to-Ambient (PCB Mount) , D2 Pak jk 40. 1. 01/20/06. IRFB3307/IRFS3307/IRFSL3307. Static @ TJ = 25 C (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 V VGS = 0V, ID = 250 A. V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA d RDS(on) Static Drain-to-Source On-Resistance m VGS = 10V, ID = 75A g VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 150 A. IDSS Drain-to-Source Leakage Current 20 A VDS = 75V, VGS = 0V. 250 VDS = 75V, VGS = 0V, TJ = 125 C. IGSS Gate-to-Source Forward Leakage 200 nA VGS = 20V. Gate-to-Source Reverse Leakage -200 VGS = -20V.

4 RG Gate Input Resistance f = 1 MHz, open drain Dynamic @ TJ = 25 C (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 98 S VDS = 50V, ID = 75A. Qg Total Gate Charge 120 180 nC ID = 75A. Qgs Gate-to-Source Charge 35 VDS = 60V. Qgd Gate-to-Drain ("Miller") Charge 46 VGS = 10V g td(on) Turn-On Delay Time 26 ns VDD = 48V. tr Rise Time 120 ID = 75A. td(off) Turn-Off Delay Time 51 RG = . tf Fall Time 63 VGS = 10V g Ciss Input Capacitance 5150 pF VGS = 0V. Coss Output Capacitance 460 VDS = 50V. Crss Reverse Transfer Capacitance 250 = Coss eff. (ER) Effective Output Capacitance (Energy Related) 570 VGS = 0V, VDS = 0V to 60V i, See Coss eff.

5 (TR) Effective Output Capacitance (Time Related) h 700 VGS = 0V, VDS = 0V to 60V h, See Fig. 5. Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current 130 c A MOSFET symbol D. (Body Diode) showing the ISM Pulsed Source Current 510 A integral reverse G. (Body Diode) d p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = 75A, VGS = 0V g trr Reverse Recovery Time 38 57 ns TJ = 25 C VR = 64V, 46 69 T = 125 C IF = 75A. g J. Qrr Reverse Recovery Charge 65 98 nC TJ = 25 C di/dt = 100A/ s 86 130 TJ = 125 C. IRRM Reverse Recovery Current A TJ = 25 C. ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD).

6 Notes: Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. Package limitation current is 75A. as Coss while VDS is rising from 0 to 80% VDSS. Repetitive rating; pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as temperature. Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax, starting TJ = 25 C, L = When mounted on 1" square PCB (FR-4 or G-10 Material). For recom RG = 25 , IAS = 75A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994. above this value.

7 R is measured at TJ approximately 90 C. ISD 75A, di/dt 530A/ s, VDD V(BR)DSS, TJ 175 C. Pulse width 400 s; duty cycle 2%. 2 IRFB3307/IRFS3307/IRFSL3307. 1000 1000. VGS VGS. TOP 15V TOP 15V. 10V 10V. ID, Drain-to-Source Current (A). ID, Drain-to-Source Current (A). 100 100 BOTTOM BOTTOM 10. 1. 10 60 s PULSE WIDTH 60 s PULSE WIDTH. Tj = 25 C Tj = 175 C. 1. 1 10 100 1000 1 10 100 1000. V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 ID = 75A. RDS(on) , Drain-to-Source On Resistance VGS = 10V. ID, Drain-to-Source Current ( ). 100 T J = 175 C. (Normalized). 10 T J = 25 C.

8 1 VDS = 25V. 60 s PULSE WIDTH. 2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180. T J , Junction Temperature ( C). VGS, Gate-to-Source Voltage (V). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 100000 VGS = 0V, f = 1 MHZ. ID= 75A. C iss = C gs + C gd, C ds SHORTED. C rss = C gd VGS, Gate-to-Source Voltage (V). VDS= 60V. C oss = C ds + C gd VDS= 38V. C, Capacitance(pF). 10000 VDS= 15V. Ciss 1000 Coss Crss 100 1 10 100 0 20 40 60 80 100 120 140. VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC). Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3. IRFB3307/IRFS3307/IRFSL3307.

9 1000 10000. OPERATION IN THIS AREA. LIMITED BY R DS(on). ID, Drain-to-Source Current (A). ISD, Reverse Drain Current (A). 1000. T J = 175 C. 100 100 sec 100 1msec T J = 25 C 10 10msec 10. DC. 1. Tc = 25 C. Tj = 175 C. VGS = 0V Single Pulse 1 1 10 100. VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V). Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V). 140 100. 120 Limited By Package 95. 100. ID, Drain Current (A). 90. 80. 85. 60. 80. 40. 75. 20. 0 70. 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180. T C , Case Temperature ( C) T J , Temperature ( C ).

10 Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 1200. EAS , Single Pulse Avalanche Energy (mJ). ID. TOP 1000. 12A. BOTTOM 75A. 800. Energy ( J). 600. 400. 200. 0. 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175. Starting T J , Junction Temperature ( C). VDS, Drain-to-Source Voltage (V). Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 IRFB3307/IRFS3307/IRFSL3307. 1. Thermal Response ( Z thJC ) D = R1 R2. R1 R2 Ri ( C/W) i (sec). J C. J 1 2. 1 2 SINGLE PULSE. ( THERMAL RESPONSE ) Ci= i/Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2. 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 1. t1 , Rectangular Pulse Duration (sec).