IRG4PC50W - Infineon Technologies

1 PD - 91657B. IRG4PC50W . INSULATED GATE BIPOLAR TRANSISTOR. Features C. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) VCES = 600V. applications Industry-benchmark switching losses improve G VCE(on) max. = efficiency of all power supply topologies 50% reduction of Eoff parameter E @VGE = 15V, IC = 27A. Low IGBT conduction losses Latest-generation IGBT design and construction offers n-channel tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode). Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz). TO-247AC. Absolute Maximum Ratings Parameter Max. Units VCES collector -to-Emitter Breakdown Voltage 600 V.

2 IC @ TC = 25 C Continuous collector Current 55. IC @ TC = 100 C Continuous collector Current 27 A. ICM Pulsed collector Current Q 220. ILM Clamped Inductive Load Current R 220. VGE Gate-to-Emitter Voltage 20 V. EARV Reverse Voltage Avalanche Energy S 170 mJ. PD @ T C = 25 C Maximum Power Dissipation 200. W. PD @ T C = 100 C Maximum Power Dissipation 78. TJ Operating Junction and -55 to + 150. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( in. ( from case ). Mounting torque, 6-32 or M3 screw. 10 lbf in ( m). Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case R CS Case-to-Sink, Flat, Greased Surface C/W. R JA Junction-to-Ambient, typical socket mount 40. Wt Weight 6 ( ) g (oz). 1. 2/7/2000. IRG4PC50W . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)CES collector -to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250 A.)

3 V(BR)CES Emitter-to- collector Breakdown Voltage T 18 V VGE = 0V, IC = V(BR)CES/ TJ Temperature Coeff. of Breakdown Voltage V/ C VGE = 0V, IC = IC = 27A VGE = 15V. VCE(ON) collector -to-Emitter Saturation Voltage IC = 55A See , 5. V. IC = 27A , TJ = 150 C. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 A. VGE(th)/ TJ Temperature Coeff. of Threshold Voltage -11 mV/ C VCE = VGE, IC = gfe Forward Transconductance U 27 41 S VCE = 100 V, IC = 27A. 250 VGE = 0V, VCE = 600V. ICES Zero Gate Voltage collector Current A. VGE = 0V, VCE = 10V, TJ = 25 C. 5000 VGE = 0V, VCE = 600V, TJ = 150 C. IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V. Switching Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 180 270 IC = 27A. Qge Gate - Emitter Charge (turn-on) 24 36 nC VCC = 400V See Qgc Gate - collector Charge (turn-on) 63 95 VGE = 15V. td(on) Turn-On Delay Time 46.

4 Tr Rise Time 33 TJ = 25 C. ns td(off) Turn-Off Delay Time 120 180 IC = 27A, VCC = 480V. tf Fall Time 57 86 VGE = 15V, RG = . Eon Turn-On Switching Loss Energy losses include "tail". Eoff Turn-Off Switching Loss mJ See Fig. 9, 10, 14. Ets Total Switching Loss td(on) Turn-On Delay Time 31 TJ = 150 C, tr Rise Time 43 IC = 27A, VCC = 480V. ns td(off) Turn-Off Delay Time 210 VGE = 15V, RG = . tf Fall Time 62 Energy losses include "tail". Ets Total Switching Loss mJ See Fig. 10,11, 14. LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 3700 VGE = 0V. Coes Output Capacitance 260 pF VCC = 30V See Fig. 7. Cres Reverse Transfer Capacitance 68 = Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ). R VCC = 80%(VCES), VGE = 20V, L = 10 H, RG = , T Pulse width 80 s; duty factor (See fig. 13a) U Pulse width s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature.

5 2 IRG4PC50W . 100. F o r b o th : T ria n g u la r w a v e : D uty cy cle: 50%. TJ = 125 C. 80 T s ink = 90 C. G ate drive as s pecified P o w e r D is s ip a tio n = 4 0 W C la m p vo lta g e : Load Current ( A ). 8 0 % o f ra te d 60. S q u a re wa ve: 6 0 % o f ra te d vo l ta g e 40. 20. Ide a l d io de s 0 A. 1 10 100 1000. f, Frequency (kHz). Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental). 1000 1000. I C , collector -to-Emitter Current (A). I C , collector -to-Emitter Current (A). 100 100.. TJ = 150 C.. TJ = 150 C.. TJ = 25 C.. TJ = 25 C. 10 10. 1.. V GE = 15V. 20 s PULSE WIDTH. 1.. V = 50V. CC. 5 s PULSE WIDTH. 1 10 5 6 7 8 9 10 11. VCE , collector -to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V). Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3. IRG4PC50W . 60.. VGE = 15V. 80 us PULSE WIDTH. VCE , collector -to-Emitter Voltage(V).

6 Maximum DC collector Current(A). 50. 40.. I C = 54 A. 30 . I C = 27 A. 20.. I C = A. 10. 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160. TC , Case Temperature ( C) TJ , Junction Temperature ( C). Fig. 4 - Maximum collector Current vs. Case Fig. 5 - Typical collector -to-Emitter Voltage Temperature vs. Junction Temperature 1. Thermal Response (Z thJC ).. SINGLE PULSE. (THERMAL RESPONSE). P DM. t1. t2.. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak TJ = PDM x Z thJC + TC. 1. t1 , Rectangular Pulse Duration (sec). Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 IRG4PC50W .. 8000.. 20. VGE = 0V, f = 1 MHz VCC = 400V. Cies = Cge + Cgc , Cce SHORTED I C = 27A. Cres = Cgc VGE , Gate-to-Emitter Voltage (V). Coes = Cce + Cgc 16. 6000. C, Capacitance (pF).. Cies 12. 4000. 8. C . oes 2000. C . 4. res 0 0. 1 10 100 0 40 80 120 160 200. VCE , collector -to-Emitter Voltage (V) QG , Total Gate Charge (nC).

7 Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs. collector -to-Emitter Voltage Gate-to-Emitter Voltage . 10.. V CC = 480V . RG = Ohm V GE = 15V VGE = 15V. TJ = 25 C VCC = 480V. I C = 27A. Total Switching Losses (mJ). Total Switching Losses (mJ).. IC = 54 A.. IC = 27 A. 1.. IC = A. 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160. RGRG, ,Gate GateResistance ). Resistance ((Ohm) TJ , Junction Temperature ( C ). Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs. Resistance Junction Temperature 5. IRG4PC50W .. 1000. RG . = Ohm VGE = 20V. TJ = 150 C T J = 125 oC. VCC = 480V. I C , collector -to-Emitter Current (A). VGE = 15V. Total Switching Losses (mJ). 100. 10. SAFE OPERATING AREA. 1. 0 10 20 30 40 50 60 1 10 100 1000. I C , collector -to-emitter Current (A) VCE , collector -to-Emitter Voltage (V). Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA.

8 collector -to-Emitter Current 6 IRG4PC50W . L D .U .T. VC * 480V. RL =. 4 X I C@25 C. 50V 0 - 480V. 1 00 0V 480 F. 960V. Q. R. * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ). * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed collector Load Test Circuit Current Test Circuit IC. L. D river* D .U .T. Fig. 14a - Switching Loss VC Test Circuit 50V. 1000V. * Driver same type Q as , VC = 480V. R S. Q. R. 90 %. S 10 %. VC. 90 %. t d (o ff). Fig. 14b - Switching Loss Waveforms 1 0%. IC 5%. tr tf t d (o n ) t=5 s Eon E o ff E ts = (E o n +E o ff ). 7. IRG4PC50W . Case Outline and Dimensions TO-247AC. N O TE S : 3 .6 5 (.1 4 3 ) -D- 5 .3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G. 1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 . 1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 ). 0 .2 5 (.)

9 0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H . -B- -A- 2 .5 0 (.0 8 9 ). 3 D IM E N S IO N S A R E S H O W N. 1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ). 5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E. T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ). 1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 ). 2X. 4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S. 1- GATE. 1 2 3 2- COLLE CTO R. 3- E M IT T E R. 4- COLLE CTO R. -C- 1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 ). * 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m ). V E R S IO N A V A IL A B LE (T O -24 7 A D ). T O O R D E R A D D "-E " S U F F IX. T O P A R T N U M B ER. 2 .4 0 ( .0 9 4 ) 1 .4 0 (.0 5 6 ) 0 .8 0 (.0 3 1 ). 2 .0 0 ( .0 7 9 ) 3X 3X. 1 .0 0 (.0 3 9 ) 0 .4 0 (.0 1 6 ). 2X. 0 .2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 ). 5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 ). 3 .4 0 (.1 3 3 ). 2X 3 .0 0 (.1 1 8 ). CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P).

10 D im e n s ion s in M illim e te rs a n d (In c h es ). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105. IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000. IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111. IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630. IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936. Data and specifications subject to change without notice. 6/00. 8 Note: For the most current drawings please refer to the IR website at.