日本の実装技術 世界の ... - JEITA半導体部会

1 1 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 2011 3 4 ( ) STRJ WG7 2010 STRJ 2 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 ) 2010 STRJ WG7 3 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 Semiconductor Technology roadmap committee (STRJ)Semiconductor Technology roadmap committee (STRJ)Japan Jisso Technology roadmap committee (JJTR)Japan Jisso Technology roadmap committee (JJTR)Electronics ProductsPWBP assiveComponentsDesignTESTI nter-connectLitho PIDS FEP ES&HM&SMET JEITAJEITA ERD ERM FI JJTR WG3 STRJWG7 AssemblyEquipmentsPackage 4 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 20111) JJTR 2011 2011 2 2009 BGA SiP MEMS roadmap TSV 2)

2 IEEE CPMT Symposium Japan 2010 8 23 ITRS Workshop 26 3)JJTR WG WG STRJ WG3 TSV 4) ITRS 2011 2011 8 1 SiP Project leader2010 WG 5 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 WGWG Year (JJTR) (STRJ)WG Publication of Jisso roadmap : June, 2011 . (Every other year)Publishing ITRS 2010 as a minor revision in Jan., 2010 Planning activities in the next yearPlanning activities in the next yearFeb. 2011 Planning activities in the next yearPlanning activities in the next yearJune, 2010 Reviewing WG1 surveyReviewing contentsJan.

3 2010 Assigning each responsibilityReady to publish ITRS 2009 Mar. 2010 Discussion on topicsSTRJ Workshop, STRJ annual reportJan. 2011 Reviewing allPublishing ITRS 2010 Apr. 2010 Reviewing roadmap tablesITRS spring meetingMay, 2010 Reviewing roadmap tablesITRS A&P TWG ECTC meetingJuly, 2010 Reviewing roadmap tablesITRS San Francisco meetingAug. 2010 ITRS A&P TWG Tokyo meetingSep. 2010 Cross cut among WGs-Oct. and discussion-Dec. 2010 Drafting and discussionITRS Japan meeting at SemiconMar. 2011 Final Editing, JJTR 2011 ITRS preparation for car electronics6 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 20112 5 7 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 1.

4 2. 3. OEM 4. OEM 5. IEC JIS JEITA JPCA IEC JIS 6. JEITA 8 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 Reel, Embossed tapeReel, Embossed tapeIC TrayIC TrayChip trayChip traySemiconductor materials & AssemblySemiconductor materials & AssemblyLEADFRAME & PWBLEADFRAME & PWBIC SocketIC SocketMolding CompoundMolding CompoundPackage & AssemblyPackage & AssemblyPACKAGE OUTLINEPACKAGE OUTLINE JEDEC 9 Work in Progress - Do not publishSTRJ WG7 (A&P)

5 Mar4, 2011 (1) 2014 2020 60 W/mK100W/mK 4 W/mK5-6 W/mK 2 W/mK4 W/mK 8-10 W/mK>12 W/mK RC ( = ) EMI 7 mm sq10 mm sqFan-out WL-CSP WL-CSP 10 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 (2) 2014 2020 CoC/Direct 40 um10 um (L or C coupling)

6 SiC 200 C250 C 30 um25 um 60 um50 um 120 um90 umWL-CSP 200 um 150 um FBGA (70um)70 um50 um (CTE=8-10 ppm/deg) 28 GPa34 GPa FC 20 um10 um CMOS / / 11 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 (3) 2014 2020 18um 19 33 SiPMEMS 175 C200 C / Low k 12 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 W Source.

7 ITRS 2009 for the roadmap of conventional technology nodeProfessor Ohba, The University of Tokyo, for new 3D TSV-based technology nodeITRS 2009 technology node (Power)2010 2013 2016 2018 202245 nm32 nm22 nm18 nm12 nm3D TSV-basedTechnology node(260W)(260W)(260W)(260W)(260W)???13 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 20113 2 3 Power consumption in CMOS:P=NaCV2f + NtLVP: Power Na: Number of acNt: Number of total transistorC: Capacitance of V: Source voltagef: Clock frequencyL.

8 Leak current of consumptiontive transistoreach transistoreach transistorData rate (Gbps) 2002D solution(Side-by-side Flip chips) 3D solution(TSV-active)Heat dissipation capability= Constraint of TSV application NOWF uturePower (W) 260W14 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 2004200620082010201220142020EV, HV inverter W/cm3830 IGBT40455060 SiC100 C125150175185200250 W/mK)50505560100 Power moduleDie sizeVoltAmperemm mm 600V100A8 mm mm.

9 Mm [SiC] One side cooling Both sides coolingWater immersed coolingEV: Electric vehicle, HV: Hybrid vehicle15 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011100200300400500 507510020025300400500(mm2)0600 Full Array WL-CSPFBGA2010 7mm WL-CSP Bump QFN WL-CSP2020 ( 10 mm WL-CSP(Wafer-level Chip Size Package) 7mm 10mm 16 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 MEMS (WLP) CMOS Die Attach Film SiP Au wireMEMS IC Die Attach Film SiP Au wireMEMS IC IC / MEMS / / / Driver ICAu WireSiP MEMS PI MEMS WaferPIMEMS WaferPIDicingDicing Au WireDriver IC1mmDriver um 10 um 17 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 SiP SiP CoC PoP TSV TSV Cascade bonding K&S)CoC (Face to face)( Inductance Coupling( NEC))

10 PoP 18 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 (Staggered) (In-line) 0102030405060702010 2012 2014 2016 2018 2020 Au wire, 175Au wire, 175 C,C,500H500 HCu wire, 175 Cu wire, 175 CC, , 1000H1000H 19 Work in Progress - Do not publishSTRJ WG7 (A&P) Mar4, 2011 2010 2012 2014 2016 2018 2020 ( 1 PoP2 900 1000 1000 1200 1400 1600 DAF (um) 15 10 10 8 8 8 (um))