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Laser Application - Disco Corporation

Laser ApplicationAblation ProcessDAL7020 DFL7020 DFL7161 DFL7160 Stealth DicingDFL7341 DFL7360 FHDFL7361 Laser Lift ExamplesLow-kGrooving Inhibitsdelamination(filmpeeling)LaserFu llCut Increasesthenumberofdieperwaferbystreetr eduction Improvesthefeedspeed(comparedtobladedici ng)SapphireGrooving Realizesstableprocessingwhilerestraining sapphirebrightnessdeterioration ImprovesCoOwithashaperecognitionfunction forbrokenwafersandwithmultiple-mountedwa ferprocessingSi+DAFfullcut HighqualitycuttingofDAF(dieattachfilm)SE M x200 Feed speed: 600 mm/s cutSEM x2000 SEM x500 Wafer thickness: 80 mSEM x100 Feed speed: 150 mm/s Wafer thickness: 90 mSEM x750 Wafer thickness: 30 m DAF thickness: 80 mSEM x150 Wafer thickness: 100 mSEM x400 Feed speed: 500 mm/s, 3 passesWafer thickness: 50 mSEM x100 Siwafer full cutSiCwafer full cutSEM image after breakingTop view after breaking Littleornoheatdamagetotheworkpiece Non-contactprocessingwithalowimpactandlo ad Idealforhardworkpiecesthatareverydifficu lttoprocess Abletoprocessfinestreetsl

What is a Hasen cut? Linear processing can be combined to enable processing of hexagonal, octagonal, and other polygonal shapes. In a Hasen cut, the laser can be turned on and off at any point to process workpieces with …

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Transcription of Laser Application - Disco Corporation

1 Laser ApplicationAblation ProcessDAL7020 DFL7020 DFL7161 DFL7160 Stealth DicingDFL7341 DFL7360 FHDFL7361 Laser Lift ExamplesLow-kGrooving Inhibitsdelamination(filmpeeling)LaserFu llCut Increasesthenumberofdieperwaferbystreetr eduction Improvesthefeedspeed(comparedtobladedici ng)SapphireGrooving Realizesstableprocessingwhilerestraining sapphirebrightnessdeterioration ImprovesCoOwithashaperecognitionfunction forbrokenwafersandwithmultiple-mountedwa ferprocessingSi+DAFfullcut HighqualitycuttingofDAF(dieattachfilm)SE M x200 Feed speed: 600 mm/s cutSEM x2000 SEM x500 Wafer thickness: 80 mSEM x100 Feed speed: 150 mm/s Wafer thickness: 90 mSEM x750 Wafer thickness: 30 m DAF thickness: 80 mSEM x150 Wafer thickness: 100 mSEM x400 Feed speed: 500 mm/s, 3 passesWafer thickness.

2 50 mSEM x100 Siwafer full cutSiCwafer full cutSEM image after breakingTop view after breaking Littleornoheatdamagetotheworkpiece Non-contactprocessingwithalowimpactandlo ad Idealforhardworkpiecesthatareverydifficu lttoprocess Abletoprocessfinestreetslessthan10 minwidth(dependingonworkpiececonditions) Compact fully-automatic model for scribingDFL7020 Smallest model for scribingDAL7020 High-throughput modelDFL7161 Standard Laser sawDFL7160 ABLATION PROCESSDISCO s Laser Application lineup supports miniaturized next generation devices, providing the optimum Kirutechnology for various materials. What is ablation?Kirumeans cutting ExamplesSapphireSEM x200 Wafer thickness: 90 mSEM x100 Wafer thickness:100 mGaAsSEMx500 Wafer thickness:100 mSiliconwaferCross-sectionphotographEdge enlargementSEM x50 700 m thickLiTaO3 SEM x100 350 m thickMEMSMEMS dieGlassSEM x500 Feed speed: 30 mm/s, 1 passWafer thickness: 100 mSupports 300 mm stealth dicingDFL7360 FHStealthdicingisaprocessingmethodthatfo rmsamodifiedlayerintheworkpiecebyfocusin galaserinsidetheworkpiece, is stealth dicing?

3 Abletocontrolprocessingwastebecauseitmod ifiestheinternalpartoftheworkpiece,makin gitsuitableforworkpiecesthatarevulnerabl etocontamination Adryprocessthatdoesnotrequirecleaning,ma kingitsuitableforprocessesthatarevulnera bletoloading( ) dicing, a new Kirutechnology, provides high-quality, high-speed wafer processing of MEMS devices and thin DICINGThe SD engine was developed for Disco by HAMAMATSU Photonics model forsapphire stealth dicingDFL7341 Flagship model with a high degreeof process expandabilityDFL7361 Laser -Based Sapphire ProcessingAblation ProcessStealth ,however,demandsforhigherthroughputandyi eldhavebeenincreased, of Processing Sapphires with a LaserWhat is Laser -basedsapphire processing?

4 A method that uses a Laser to process sapphire used as a substrate in high-brightness ,improvesthroughput, ,oncethedevicedatahasbeenenteredandtheca ssettehasbeenplaced, the optimal Laser processing in accordance with customers required processing qualityAblationscribingisaprocesswhichac hievesagoodbalancebetweencostandbrightne ss, ,stealthdicingdoesnotdeterioratethebrigh tness, ,sincestealthdicingdoesnothaveakerfwidth ,itgreatlycontributestostreetreduction, of Wafers with Backside Metal FilmInapplicationswherealaserisirradiate dfromthesideoppositetothewaferpatternsur faceforprocessing, ,ifmetalfilmisattachedtothebackside, (Thebacksidealignmentunitisanoptionalspe cificationusedonlyinablation.)

5 Note: The HogoMax Water-soluble protective film coating function is an optional dicing: After breakingx200 Scribing: After breakingx200 Diamond scribing+ BreakingDAL/DFL7020 DFL7160 DFL7341 BrightnessExcellentGoodGoodExcellentThro ughputFairGoodExcellentExcellentYieldGoo dExcellentExcellentExcellentEquipment initial costsExcellentExcellentGoodFairRunning costs (consumables + personal expenses, etc)FairFairGoodGoodProcessProductivityC ostDelamination (film peeling) can be a problem when blade dicing of wafers with low-k film. Laser grooving, which has no mechanical load, can be used to achieve high-quality processing with minimal delamination, thereby contributing to higher productivity.

6 Disco Laser grooving is also used in applications where the metal layer (TEG, wiring, circuits, etc.) is removed along the dicing ceramics SEM x100 635 m thickLaser GroovingAblation ProcessLasergroovingissuitableforwafersw ithlow-kfilm(lowdielectricconstant) , is Laser grooving ?A processing method that forms a narrow groove in the cut street using a Film &Metal Layer GroovingLow-k Grooving ExamplesPerforming Laser grooving prior to blade dicing enhances the quality and throughput when processing low-k Laser grooving and stealth dicing achieves significant street Full CutAblation ProcessAlaserfullcutiseffectiveforthinsi licon,compoundsemiconductors,waferswithb acksidemetalfilm,high-brightnessLEDsubst rates,a n dm e t a l s(Cu,molybdenum), ,high-qualityprocessingandsignificantstr eetreductionbyfocusingthelaserbeamonaspo tlessthan10 +DAF(dieattachfilm) is a Laser full cut ?

7 A method that completely cuts the workpiece only with a Laser on Hard-to-Cut Materials + Breaking Aluminumnitrideusedinheatsinkmaterials Galliumnitrideusedinlaserdiodematerials Aluminaceramics,SiC, materials below, which are difficult to cut with a blade, can now be made into die by Laser scribing followed by nitride SEM x100 150 mm/s, 1 pass, 200 m thickThis process realizes high quality, high-speed full cutting with a Laser on thin silicon wafers that are very difficult to Silicon Wafer Full CutSEM x100200 mm/s, 1 pass, 50 m thickPreviously, when processing compound semiconductors such as GaAs and SiC, high productivity could not be achieved since it was difficult to increase the feed speed in the existing blade dicing.

8 The non-contact and low-load Laser process enables high-speed, high-quality Device Full CutSEM x300140mm/s, 1 pass, 100 m thickGaAsUncut DAF (whiskers) tends to occur when dicing DAF with a blade. Laser cutting can significantly reduce + DAF Full CutSEM x750 Wafer thickness: 30 m, DAF thickness: 10 mThe Laser enables high-quality and high-speed full cuts of metals such as Cu and molybdenum used in high-brightness LED substrates and heat sink. The kerf loss can also be Full CutCu full cut x100 CuStreet widthWhat is a Hasen cut?Linearprocessingcanbecombinedtoenabl eprocessingofhexagonal,octagonal, a Hasen cut, the Laser can be turned on and off at any point to process workpieces with different die sizes andpolygonal-shaped workpieces,supporting a wide range of processing method involving Laser irradiation in a broken (dotted) Polygonal-Shaped DieMulti-project Wafer (MPW) ProcessingDBG + DAF Laser CutWhat is a DBG + DAF Laser cut ?

9 Aprocess that cuts the DAF with a Laser after the DBG CutAblation ProcessStealth DicingProcessingisalsopossibleforsamplew afers,evaluationwafers, +expansionProcessingispossibleforsamplew afers,evaluationwafers, Effect by Combining Stealth Dicing and the Hasen CutThe DBG (dicing before grinding) process, which separates die during backgrinding after half-cut dicing, lowers backside chipping, improves die strength, and is expected to lower the risk of damage in thin wafers. The DBG + DAF cut process attaches DAF to thebackside of a wafer for which the die were separated in the DBG process, and then cuts only the DAF. Laser DAF cutting is effective because it can process shifted die and improves processing quality.

10 When DAF is applied to the DBG process, it is possible touse DBG in the production of the ultra-thin die used in , photograph after DBG + DAF cutSEM x500, 200mm/sSi: 70 m thickDAF:20 m thickAblation ProcessHogoMax003 Ablation ProcessLaser processing particles (debris) generated during the ablation process cannot be removed by deionized water cleaning once attached to the wafer surface. Debris causes device defects such as bonding defects and increased current leaks. HogoMax, an original water-soluble protective film developed by Disco , contributes to the improved reliability of devices when applied tothe processing surface before Laser processing by greatly reducing the adhesion of debris.


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