LM747 Dual Operational Amplifier - TI.com

1 LM747LM747 dual Operational AmplifierLiterature Number: SNOS661TL/H/11479LM747 dual Operational AmplifierNovember 1994LM747 dual Operational AmplifierGeneral DescriptionThe LM747 is a general purpose dual Operational two amplifiers share a common bias network and powersupply leads. Otherwise, their operation is completely features of the LM747 are: no latch-up when in-put common mode range is exceeded, freedom from oscilla-tions, and package LM747C/LM747E is identical to the LM747 / LM747 Aexcept that the LM747C/LM747E has its specificationsguaranteed over the temperature range from 0 Ctoa70 Cinstead ofb55 Ctoa125 frequency compensation requiredYShort-circuit protectionYWide common-mode and differential voltage rangesYLow power consumptionYNo latch-upYBalanced offset nullConnection DiagramsMetal Can PackageTL/H/11479 4 Order Number LM747 HSee NS Package Number H10 CDual-In-Line PackageTL/H/11479 5 Order Number LM747CN or LM747 ENSee NS Package Number N14A*VaA and VaB are internally National Semiconductor

2 CorporationRRD-B30M115/Printed in U. S. Maximum RatingsIf Military/Aerospace specified devices are required,please contact the National Semiconductor SalesOffice/Distributors for availability and VoltageLM747/LM747Ag22 VLM747C/LM747Eg18 VPower Dissipation (Note 1)800 mWDifferential Input Voltageg30 VInput Voltage (Note 2)g15 VOutput Short-Circuit DurationIndefiniteOperating Temperature RangeLM747/LM747Ab55 Ctoa125 CLM747C/LM747E0 Ctoa70 CStorage Temperature Rangeb65 Ctoa150 CLead Temperature (Soldering, 10 sec.)300 CElectrical Characteristics(Note 3)ParameterConditionsLM747A/ LM747 ELM747LM747 CUnitsMin Typ Max Min Typ Max Min Typ MaxInput Offset Voltage TAe25 CRSs10 Input Offset15mV/ CVoltage DriftInput Offset Voltage TAe25 C, VSeg20Vg10g15g15mVAdjustment RangeInput Offset Current TAe25 20020 200nA7085 500300 Average Input CCurrent DriftInput Bias CurrentTAe25 C308080 50080 500 ResistanceTAe25 C, Voltage Range TAe25 Cg12g13Vg12g13g12g13 Large SignalTAe25 C, RLt2kXVoltage GainVSeg20V, VOeg15V50V/mVVSeg15V, VOeg10V50 20020 200V/mVRLt2kXVSeg20V.

3 VOeg15V32V/mVVSeg15V, VOeg10V2515V/mVVSeg5V, VOeg2V10V/mVOutput Voltage Swing VSeg20 VRLt10 kXg16 VRLt2kXg15 VSeg15 VRLt10 kXg12g14g12g14 VRLt2kXg10g13g10g13 Output ShortTAe25 C1025352525mACircuit Current1040 Common-ModeRSs10 kX,VCMeg12V70907090dBRejection RatioRSs50 kX,VCMeg12V 80952 Electrical Characteristics(Note 3) (Continued)ParameterConditionsLM747A/LM7 47 ELM747LM747 CUnitsMinTyp Max Min Typ Max Min Typ MaxSupply VoltageVSeg20V to VSeg5 VRejection RatioRSs50X8696dBRSs10 kX77967796 Transient ResponseTAe25 C, Unity GainRise (Note 4)TAe25 RateTAe25 C, Unity Current/AmpTAe25 Consumption/Amp TAe25 CVSeg20V80150mWVSeg15V50855085LM747 AVSeg20 VTAeTAMIN165mWTAeTAMAX135LM747 EVSeg20V150 TAeTAMIN150mWTAeTAMAX150LM747 VSeg15 VTAeTAMIN60 100mWTAeTAMAX4575 Note 1:The maximum junction temperature of the LM747C/LM747E is 100 C.

4 For operating at elevated temperatures, devies in the TO-5 package must bederated based on a thermal resistance of 150 C/W, junction to ambient, or 45 C/W, junction to case. The thermal resistance of the dual -in-line package is 100 C/W, junction to 2:For supply voltages less thang15V, the absolute maximum input voltage is equal to the supply 3:These specifications apply forg5 VsVSsg20V andb55 CsTAs125 C for the LM747A and 0 CsTAs70 C for the LM747E unless otherwisespecified. The LM747 and LM747C are specified for VSeg15V andb55 CsTAs125 C and 0 CsTAs70 C, respectively, unless otherwise 4:Calculated value from: Time (ms).

5 Schematic Diagram(Each Amplifier )TL/H/11479 1 Note:Numbers in parentheses are pin numbers for Amplifier B. DIP Performance CharacteristicsTemperatureCurrents vs AmbientInput Bias and Offsetvs Supply VoltageDC ParametersRatio vs FrequencyCommon Mode Rejectionvs FrequencyOutput Voltage Swingvs Load ResistanceOutput Voltage SwingSupply VoltageInput Range vsOutput Swing andvs Ambient TemperatureNormalized DC ParametersTransient Responsevs Ambient TemperatureFrequency Characteristicsvs Supply VoltageFrequency Characteristicsvs FrequencyOutput ResistanceCharacteristics vs FrequencyOpen Loop TransferTL/H/11479 24 Typical Performance Characteristics(Continued)

6 Vs FrequencyInput CapacitanceInput Resistance andVarious BandwidthsBroadband Noise forvs Frequencyand CurrentInput Noise VoltageSignal Pulse ResponseVoltage Follower LargeTL/H/11479 356 Physical Dimensionsinches (millimeters)Metal Can Package (H)Order Number LM747 HNS Package Number H10C7LM747 dual Operational AmplifierPhysical Dimensionsinches (millimeters) (Continued) dual -In-Line Package (N)Order Number LM747CN or LM747 ENNS Package Number N14 ALIFE SUPPORT POLICYNATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONALSEMICONDUCTOR CORPORATION.

7 As used herein:1. Life support devices or systems are devices or 2. A critical component is any component of a lifesystems which, (a) are intended for surgical implantsupport device or system whose failure to perform caninto the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the lifefailure to perform, when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, reasonably expected to result in a significant injuryto the SemiconductorNational SemiconductorNational SemiconductorNational SemiconductorCorporationEuropeHong Kong West Bardin RoadFax: (a49) 0-180-530 85 8613th Floor, Straight Block,Tel: 81-043-299-2309 Arlington, TX 76017 Email: Centre, 5 Canton : 81-043-299-2408 Tel.

8 1(800) 272-9959 Deutsch Tel: (a49) 0-180-530 85 85 Tsimshatsui, KowloonFax: 1(800) 737-7018 English Tel: (a49) 0-180-532 78 32 Hong KongFran3ais Tel: (a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: (a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and (TI)reservetherighttomakecorrections,mod ifications,enhancements,improvements, s accordancewithTI s ,testingofallparametersofeachproductis , ,eitherexpressorimplied,is grantedunderanyTIpatentright,copyright,m askworkright,orotherTIintellectualproper tyrightrelatingtoanycombination,machine, orprocessin licensefroma thirdpartyunderthepatentsorotherintellec tualpropertyofthethirdparty,ora TIdatabooksordatasheetsis permissibleonlyif reproductionis withoutalterationandis accompaniedbyallassociatedwarranties,con ditions,limitations, safety-criticalapplications(suchaslifesu pport)

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