Micron Serial NOR Flash Memory

1 128Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL128 ABA. Features Options Marking Voltage SPI-compatible Serial bus interface L. Single and double transfer rate (STR/DTR) Density Clock frequency 128Mb 128. 133 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A. Dual/quad I/O commands for increased through- Device generation B. put up to 90 MB/s Die revision A. Supported protocols in both STR and DTR Pin configuration Extended I/O protocol RESET# and HOLD# 8.

2 Dual I/O protocol Sector Size Quad I/O protocol 64KB E. Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 16-pin SOP2, 300 mils body width SF. Software reset (SO16W). Additional reset pin for selected part numbers 8-pin SOP2, 208 mils body width SE. Dedicated 64-byte OTP area outside main Memory (SO8W). Readable and user-lockable 24-ball T-PBGA, 05/6mm x 8mm 12. Permanent lock with PROGRAM OTP command (TBGA24). Erase capability 24-ball T-PBGA 05/6mm x 8mm (4 x 14. Bulk erase 6 array).

3 Sector erase 64KB uniform granularity W-PDFN-8 8mm x 6mm (MLP8 8mm W9. Subsector erase 4KB, 32KB granularity x 6mm). Security and write protection W-PDFN-8 6mm x 5mm (MLP8 6mm W7. Volatile and nonvolatile locking and software x 5mm). write protection for each 64KB sector Standard security 0. Nonvolatile configuration locking Special options Password protection Standard S. Hardware write protection: nonvolatile bits Automotive A. (BP[3:0] and TB) define protected area size Operating temperature range Program/erase protection during power-up From 40 C to +85 C IT. CRC detects accidental changes to raw data From 40 C to +105 C AT.

4 Electronic signature JEDEC-standard 3-byte signature (BA18h). Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP). CCMTD-1725822587-10223. - Rev. K 04/19 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 128Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities.

5 Verify valid part numbers by using Micron 's part catalog search at To compare features and specifications by device type, visit Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES. Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = IT = 40 C to +85 C. U = AT = 40 C to +105 C. UT = 40 C to +125 C. Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100.

6 512 = 512Mb (64MB). 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S# 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array). B = 2 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array). C = 4 die/1 S# SC = 8-pin SOP2, 150 mils SE = 8-pin SOP2, 208 mils Device Generation SF = 16-pin SOP2, 300 mils B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm Die Revision 5x = WLCSP package1. A = Rev. A. B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB subsectors Pin Configuration Option 1 = HOLD# pin 3 = RESET# pin 8 = RESET# and HOLD# pin Note: 1.

7 WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. CCMTD-1725822587-10223. - Rev. K 04/19 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved. 128Mb, 3V Multiple I/O Serial Flash Memory Features Contents Important Notes and Warnings .. 8. Device Description .. 9. Device Logic Diagram .. 10. Advanced Security Protection .. 10. Signal Assignments Package Code: 12 .. 11. Signal Assignments Package Code: 14 .. 12.

8 Signal Assignments Package Code: SE, W7, W9 .. 12. Signal Assignments Package Code: SF .. 13. Signal Descriptions .. 14. Package Dimensions Package Code: 12 .. 15. Package Dimensions Package Code: 14 .. 17. Package Dimensions Package Code: SE .. 18. Package Dimensions Package Code: SF .. 19. Package Dimensions Package Code: W7 .. 20. Package Dimensions Package Code: W9 .. 21. Memory Map 128Mb Density .. 22. Status Register .. 23. Block Protection Settings .. 24. Flag Status Register .. 25. Internal Configuration Register .. 26. Nonvolatile Configuration Register .. 27.

9 Volatile Configuration Register .. 29. Supported Clock Frequencies .. 30. Enhanced Volatile Configuration Register .. 32. Security Registers .. 33. Sector Protection Security Register .. 34. Nonvolatile and Volatile Sector Lock Bits Security .. 35. Volatile Lock Bit Security Register .. 35. Device ID Data .. 36. Serial Flash Discovery Parameter Data .. 37. Command Definitions .. 38. Software RESET Operations .. 43. RESET ENABLE and RESET Memory Commands .. 43. READ ID Operations .. 44. READ ID and MULTIPLE I/O READ ID Commands .. 44. READ Serial Flash DISCOVERY PARAMETER Operation.

10 45. READ Serial Flash DISCOVERY PARAMETER Command .. 45. READ Memory Operations .. 46. READ Memory Operations Timings .. 46. WRITE ENABLE/DISABLE Operations .. 53. READ REGISTER Operations .. 54. WRITE REGISTER Operations .. 55. CLEAR FLAG STATUS REGISTER Operation .. 57. PROGRAM Operations .. 58. PROGRAM Operations Timings .. 59. ERASE Operations .. 62. SUSPEND/RESUME Operations .. 64. PROGRAM/ERASE SUSPEND Operations .. 64. PROGRAM/ERASE RESUME Operations .. 64. ONE-TIME PROGRAMMABLE Operations .. 66. CCMTD-1725822587-10223. - Rev. K 04/19 EN 3 Micron Technology, Inc.