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Omnipolar Detection Hall IC - Rohm

Product structure Silicon monolithic integrated circuit This product is not designed protection against radioactive rays . 1/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 14 001 x x Detection hall IC (Polarity Detection for both S and N features dual outputs) BU52058 GWZ General Description The BU52058 GWZ is Omnipolar hall IC incorporating a polarity determination circuit that enables operation (output) on both the S- and N-poles, with the polarity judgment based on the output processing configuration.

DatasheetDatasheet 2/14 © 2013 ROHM Co., Ltd. All rights reserved. TSZ02201-0M3M0F413010-1-2 www.rohm.com TSZ22111・15・001 …

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Transcription of Omnipolar Detection Hall IC - Rohm

1 Product structure Silicon monolithic integrated circuit This product is not designed protection against radioactive rays . 1/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 14 001 x x Detection hall IC (Polarity Detection for both S and N features dual outputs) BU52058 GWZ General Description The BU52058 GWZ is Omnipolar hall IC incorporating a polarity determination circuit that enables operation (output) on both the S- and N-poles, with the polarity judgment based on the output processing configuration.

2 This hall IC product can be in with movie, mobile phone and other applications involving crystal panels to detect the (front-back) location or determine the rotational direction of the panel. Features Omnipolar Detection (polarity Detection for both S and N features dual outputs) Micro power operation (small current using intermittent operation method) Ultra-compact CSP4 package (UCSP35L1) Polarity judgment and output on both poles (OUT1: S-pole output; OUT2: N-pole output) High ESD resistance 8kV(HBM) Applications Mobile phones, notebook computers, digital video camera, digital still camera, etc.

3 Key Specifications VCC voltage range: to Operate point: + (Typ.) Hysteresis: (Typ.) Period: 50ms(Typ.) Supply current (AVG): A (Typ.) Output type: CMOS Operating temperature range: -40 C to +85 C Package W(Typ.) x D(Typ.) x H(Max.) Block Diagram, Pin Configuration and Pin Description BU52058 GWZPIN No. PIN NAME FUNCTION COMMENT A1 GND GROUND A2 OUT2 OUTPUT (respond the north pole) B1 VDD POWER SUPPLY B2 OUT1 OUTPUT (respond the south pole) A1 B2 B1 A2 ReverseA2 B2 B1 A1 Surface The CMOS output terminals enable direct connection to the PC, with no external pull-up resistor required.

4 Adjust the bypass capacitor valueas necessary, according to voltagenoise conditions, etc. GND DYNAMIC OFFSET CANCELLATION SAMPLE & HOLD OUT1 OUT2 GND TIMING LOGIC LATCH LATCH hall ELEMENT B2 FVDD A1A2B1 VDDD atasheetDatasheet 2/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 15 001 BU52058 GWZ Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings UnitRemarks Power Supply Voltage VDD to + *1 V Output Current IOUT mA Power Dissipation Pd 100 mWReduced by for each increase in Ta of 1 C over 25 (mounted on 24mm 20mm Glass-epoxy PCB) Operating Temperature Range Topr -40 to +85 C Storage Temperature Range Tstg -40 to +125 C *1.

5 Not to exceed Pd Magnetic, Electrical characteristics BU52058 GWZ (Unless otherwise specified, VDD , Ta 25 C) LIMIT PARAMETERS SYMBOL MINTYPMAXUNIT CONDITIONS Power Supply Voltage VDD BopS - OUTPUT OUT1 (respond the south pole) Operate Point BopN mT OUTPUT OUT2 (respond the north pole) BrpS - OUTPUT OUT1 (respond the south pole) Release Point BrpN - OUTPUT OUT2 (respond the north pole)

6 BhysS - - Hysteresis BhysN - - mT Period Tp - 50 100ms Output High Voltage VOH - V BrpN<B<BrpS 2 IOUT = Output Low Voltage VOL - - V B<BopN, BopS<B 2 IOUT =+ Supply Current IDD(AVG) - 5 8 A Average Supply Current During Startup Time IDD(EN) - - mA During Startup Time Value Supply Current During Standby Time IDD(DIS) - - A During Standby Time Value 2.

7 B = Magnetic flux density 1mT=10 Gauss Positive ( + ) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor. After applying power supply, it takes one cycle of period (TP) to become definite output. DatasheetDatasheet 3/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 15 001 BU52058 GWZ Figure of measurement circuit Product Name IOUT BU52058 GWZ Product Name IOUT BU52058 GWZ Bop/Brp VDD 100 F VDD GND OUT1 /OUT2 VBop and Brp are measured with applying the magnetic fieldfrom the outside.

8 Figure 1. Bop,Brp measurement circuit VDDVOH 100 F VDD GND OUT1 /OUT2 VIOUTF igure 3. VOH measurement circuitVOL VDD100 F VDDGND OUT1 /OUT2 IOUTVF igure 4. VOL measurement circuit Figure 2. Tp measurement circuit The period is monitored by VDDVDD GND OUT1/OUT2 OscilloscopeIDD VDD2200 F VDD GND OUT1 /OUT2 AFigure 5. IDD measurement circuit DatasheetDatasheet 4/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 15 001 BU52058 GWZ Typical Performance Curves BU52058 GWZ Figure 8. TP Ambient temperature 0102030405060708090100-60-40-20020406080 100 AMBIENT TEMPERATURE [ C]PERIOD [ms]VDD= Figure 9.

9 TP Supply VOLTAGE [V]PERIOD [ms]Ta = 25 C Figure 6. Bop,Brp Ambient TEMPERATURE [ C]MAGNETIC FLUX DENSITY [mT]VDD= Bop S Brp S Brp N Bop N Figure 7. Bop,Brp Supply VOLTAGE V MAGNETIC FLUX DENSITY [mT]Bop SBrp S Brp N Bop NTa = 25 CDatasheetDatasheet 5/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 15 001 BU52058 GWZ Typical Performance Curves -continued Figure 10. IDD Ambient temperature TEMPERATURE [ C]AVERAGE SUPPLY CURRENT [ A]VDD= Figure 11.

10 IDD Supply VOLTAGE [V]AVERAGE SUPPLY CURRENT [ A]Ta = 25 CDatasheetDatasheet 6/14 TSZ02201-0M3M0F413010-1-2 2013 ROHM Co., Ltd. All rights reserved. TSZ22111 15 001 BU52058 GWZ Description of Operations Micropower Operation (Small current using intermittent action) (Offset Cancellation) The dual output Omnipolar Detection hall IC adopts an intermittent operation method to save energy. At startup, the hall elements, amp, comparator and other Detection circuits power ON and magnetic Detection begins.


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