OPT101: Monolithic Photodiode and Single-Supply ...

1 1 MWOPT1013 pF8 pF254V+ mV1 Wavelength (nm)200300400500600700800900 1000 1100 Voltage Output (V/ W)Using Internal1-M Responsivity (A/W)ProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityOPT101 SBBS002B JANUARY1994 REVISEDJUNE2015 OPT101 MonolithicPhotodiodeand Single-SupplyTransimpedanceAmplifier1 Features3 DescriptionThe OPT101is a monolithicphotodiodewith on-chip1 to 36 integratedcombination photodiodeandtransimpedanceamplifieron a( )singlechipeliminatestheproblemscommonly Internal1-M FeedbackResistorencounteredin discretedesigns,suchas leakagecurrenterrors,noisepick-up,and gainpeakingas a (650nm)resultof Bandwidth:14 kHz at RF= 1 M linearlywith amplifieris designed Low QuiescentCurrent:120 Afor singleor dual power-supplyoperation. Packages:ClearPlastic8-pinPDIPand ( )SOPphotodiodeoperatesin the photoconductivemodeforexcellentlinearity and low ApplicationsThe V to 36 V supplies MedicalInstrumentationand quiescentcurrentis only120 A.

2 Thisdeviceisavailablein clearplastic8-pinPDIP,and J-leadSOP LaboratoryInstrumentationfor temperaturerangeis 0 C Positionand ProximitySensorsto 70 C. PhotographicAnalyzers BarcodeScannersDeviceInformation(1)PARTN UMBERPACKAGEBODYSIZE(NOM) SmokeDetectorsPDIP(8) CurrencyChangersOPT101 SOP(8) (1) For all availablepackages,see the packageoptionaddendumat the end of the IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JANUARY1994 Applicationand Pin Configurationand and Don'ts .. Deviceand :Op Mechanical,Packaging,and RevisionHistoryChangesfromRevisionA (October2003)to RevisionBPage AddedPin Functions,ESDR atings,RecommendedOperatingConditions, andThermalinformationtables,andParameter MeasurementInformation,DetailedDescripti on,Applicationand Implementation,Power-SupplyRecommendatio ns,Layout, andDeviceand DocumentationSupportsections; DeletedW versionof devicefromToleranceparameterof ElectricalCharacteristicstable.

3 W versionnow 1994 2015,TexasInstrumentsIncorporatedProduct FolderLinks:OPT101VS In V1M FeedbackWCommonNCNCO utput12348765(1) JANUARY1994 REVISEDJUNE20155 Pin Configurationand FunctionsDTLand NTCP ackages8-pinSOPand 8-pinPDIPTop View(1) V to 36 V relativeto V op ampand the cathodeof the not connect,or apply2 InInputadditionalop groundor a negativevoltagethat meetsthe recommended3 FeedbackInputConnectionto Output,pin Do not connect7NC Do not connect8 CommonInputAnodeof the ,connectto 1994 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks:OPT101 OPT101 SBBS002B JANUARY1994 (unlessotherwisenoted)(1)MINMAXUNITS upplyvoltage(VSto Commonpin or V pin)036 VOutputshort-circuit(to ground)ContinuousOperating 2585 CTemperatureJunction85 CStorage,Tstg 2585 C(1)StressesbeyondthoselistedunderAbsolu teMaximumRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions.

4 Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay (HBM),per ANSI/ESDA/JEDECJS-001(1) 2000V(ESD)ElectrostaticdischargeVCharged -devicemodel(CDM),per JEDEC specificationJESD22-C101(2) 500(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (unlessotherwisenoted) COperating070 (1)DTL(SOP)NTC(PDIP)UNIT8 PINS8 PINSR C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/W(1)For moreinformationabouttraditionaland new thermalmetrics,see theSemiconductorand IC PackageThermalMetricsapplicationreport, 1994 2015, JANUARY1994 TA= 25 C, VS= V to 36 V, = 650 nm, internal1-M feedbackresistor,and RL= 10 k (unlessotherwisenoted) WVoltageoutputvs temperature100ppm/ CUnit-to-unitvariation 5%Nonlinearity(1)Full-scale(FS)output= 24 V of ,RTO(2)Offsetvoltage, temperature 10 V/ COffsetvoltagevs powersupplyVS= V to 36 V10100 V/VfB= Hz to 20 kHz,VS= 15 V,Voltagenoise,dark300 VrmsVPIN3= 15 VTRANSIMPEDANCEGAINR esistor1M Tolerance 2%Tolerancevs temperature 50ppm/ CFREQUENCYRESPONSEB andwidthVOUT= 10 VPP14kHzRiseand fall time10%to 90%,VOUT= 10-Vstep28 sto ,VOUT= 10-Vstep160 sSettlingtimeto ,VOUT= 10-Vstep80 sto 1%, VOUT= 10-Vstep70 sOverloadrecovery100%,returnto linearoperation50 sOUTPUTV oltageoutput,high(VS) (VS) ,stableoperation10nFShort-circuitcurrent VS= 36 V15mAPOWERSUPPLYDark,VPIN3= 0 V120 AQuiescentcurrentRL= , VOUT= 10 V220 A(1)Deviationin percentof full scalefrombest-fitstraightline.

5 (2)Referredto 1994 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks:OPT101 OPT101 SBBS002B JANUARY1994 :PhotodiodeAt TA= 25 C and VS= V to 36 V (unlessotherwisenoted) = 650 nm( A/W)/cm8652 DarkcurrentVDIODE= temperatureVDIODE= mVDoublesevery7 C :Op Amp(1)At TA= 25 C, VS= V to 36 V, = 650 nm, internal1-M feedbackresistor,and RL= 10 k (unlessotherwisenoted)PARAMETERTESTCONDI TIONSMINTYPMAXUNITINPUTO ffsetvoltage temperature V/ Cvs powersupply10 V/VInputbias current( ) input165pAvs temperature( ) inputDoublesevery10 C Differential400 || 5M || pFInputimpedanceCommon-mode250 || 35G || pFCommon-modeinputvoltagerangeLinearoper ation0 to (VS 1)VCommon-moderejection90dBOPEN-LOOPGAIN Open-loopvoltagegain90dBFREQUENCYRESPONS EG ainbandwidthproduct(2)2 MHzSlewrate1V/ s1% sOUTPUTV oltageoutput,high(VS) (VS) 36 V15mAPOWERSUPPLYDark,VPIN3= 0 V120 AQuiescentcurrentRL= , VOUT= 10 V220 A(1)Op ampspecificationsprovidedfor informationand comparisononly.

6 (2)Stablegains 10 1994 2015,TexasInstrumentsIncorporatedProduct FolderLinks:OPT101 Relative ResponseIncident Angle ( ) PackageTemperature ( C) Voltage (mV)Irradiance (W/m )2 Output Voltage (V) = 1 M!FR = 100 k!FR = 10 M!Fl= 650 nmR = 50 k!FFrequency (Hz) (V/ W)R = 50 k , C!= 56 pFFEXTR = 10 M!FR = 1 M!FR = 100 k , C!= 33 pFFEXTR adiant Power ( W)Output Voltage (V) = 1 M!FR = 100 k!FR = 10 M!Fl= 650 nmR = 50 k!FWavelength (nm)200300400500600700800900 1000 Current or Voltage OutputUltravioletBlueGreenYellowRed70 C25 CInfrared650 nm( A/W) JANUARY1994 TA= 25 C, VS= V to 36 V, = 650 nm, internal1-M feedbackresistor,and RL= 10 k (unlessotherwisenoted)Figure1. NormalizedSpectralResponsivityFigure2. VoltageResponsivityvs RadiantPowerFigure4. VoltageResponsivityvs FrequencyFigure3. VoltageResponsivityvs IrradianceFigure5. Responsevs IncidentAngleFigure6. DarkVOUTvs TemperatureCopyright 1994 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks:OPT101 Bandwidth (Hz)101001k10k100k1M10 710 810 910 1010 1110 12 Noise Effective Power (W)R = 10 M FR = 50 k || 56 pF FR = 100 k || 33 pF FR = 1 M INTERNALFF requency (Hz) Voltage ( Vrms)R = 50 k || 56 pF!

7 FR = 10 M!FR = 1 M!FINTERNALR = 100 k || 33 pF!FV (V)S051015202530354020181614121086420 Short-Circuit Current (mA)Temperature ( C) 010203040506070180160140120100806040200 20 40I I(pA)BIASDARK1 M OPT1013 pFIFEEDBACK(I I)BIASDARKlVBIBIAS8 pFIDARKV V(V)OUTPIN305101520253035403002502001501 00500 Quiescent Current ( A)V = VSV = 36 VSV = 15 VSTemperature ( C) 0102030406050703002752502252001751501251 007550 Quiescent Current ( A)V = 15 V, V V= 15 VSOUTPIN3V = +15 V, VV = 0 VSOUTPIN3V = +5 V, VV = 0 VSPIN3 OUTV = 5 V, VV = 5 VSOUTPIN3 OPT101 SBBS002B JANUARY1994 (continued)At TA= 25 C, VS= V to 36 V, = 650 nm, internal1-M feedbackresistor,and RL= 10 k (unlessotherwisenoted)Figure7. QuiescentCurrentvs TemperatureFigure8. QuiescentCurrentvs (VOUT VPIN3)Figure9. Short-CircuitCurrentvs VSFigure10. (IBIAS IDARK) vs TemperatureVS= 15 V, VOUT VPIN3= 15 VVS= 15 V, VOUT VPIN3= 15 VFigure11.

8 OutputNoiseVoltagevs MeasurementBandwidthFigure12. NoiseEffectivePowervs MeasurementBandwidth8 SubmitDocumentationFeedbackCopyright 1994 2015, JANUARY1994 REVISEDJUNE2015 TypicalCharacteristics(continued)At TA= 25 C, VS= V to 36 V, = 650 nm, internal1-M feedbackresistor,and RL= 10 k (unlessotherwisenoted)Figure14. Large-SignalResponseFigure13. Small-SignalResponseCLOAD= 10,000pF, pin 3 = 0 VCLOAD= 10,000pF, Pin 3 = 15 VFigure15. Small-SignalResponseFigure16. Small-SignalResponseCopyright 1994 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback9 ProductFolderLinks:OPT101 OPT101 SBBS002B JANUARY1994 UniformityThe OPT101is testedwith a light sourcethat uniformlyilluminatesthe full areaof the integratedcircuit,includingthe op siliconof integratedcircuit(IC) amplifiersis light-sensitiveto somedegree,the OPT101op ampcircuitryis designedto minimizethis shieldedwithmetal,andthephotodiodeareais very largerelativeto the op the lightsourceis focusedto a smallarea,be surethat it is properlyaimedto fall on the the photodiodeprovidesimprovedsettlingtimesc omparedto a sourcethat uniformlyilluminatesthe full areaof the die.

9 If a narrowly-focusedlight sourcemissesthe photodiodeareaand falls only on the op ampcircuitry,the OPT101doesnot ( )photodiodeareaallowseasypositioningof narrowly-focusedlight photodiodeareais easilyvisiblebecausethe areaappearsvery darkcomparedto the incidentangleof the light sourcealso effectsthe apparentsensitivityin smallincidentangles,the lossin sensitivityis simplydue to the smallereffectivelightgatheringareaof the Photodiode (proportionalto the cosineof the angle).At a greaterincidentangle,lightis diffractedand scatteredby shownin 1994 2015,TexasInstrumentsIncorporatedProduct FolderLinks:OPT1011 MWOPT1013 pF8 pF254V+ JANUARY1994 REVISEDJUNE20158 a large-areaphotodiodeintegratedwithan optimizedoperationalamplifierthat makestheOPT101a small,easy-to-use, photodiodehas a verylargemeasurementareathatcollectsa significantamountof light,and thusallowsfor photodiodehas awidespectralresponsewith a maximumpeakin the infraredspectrum,and a useablerangefrom300 nm to1100nm.

10 The widepower-supplyrangeof V to 36 V makesthis deviceusefulin a varietyof architectures;fromall-analogcircuitsto on-chipvoltagesourcekeepsthe amplifierin a goodoperatingregion,evenat low light OPT101voltageoutputis the productof the photodiodecurrenttimesthe feedbackresistor,(IDRF), plus apedestalvoltage,VB, of mV introducedfor mV dc withno light,and increaseswith ,ID, is proportionalto the radiantpower,orflux, (in watts)fallingon the a wavelengthof 650 nm (visiblered) the photodioderesponsivity,RI,is otherwavelengthsis shownin Figure1. Theinternalfeedbackresistoris lasertrimmedto 1 M . Usingthis resistor,the outputvoltageresponsivity,RV, is W at for the responsethroughouta widerangeof radiantpowerin showstheresponsethroughouta widerangeof irradiancein wattsper 1994 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback11 ProductFolderLinks:OPT101+15 V 15 V 15 VOPA1771 MWOPT1013 pF254 VSl38VB8 pF1 Common VR1500 kW1/2 REF200100 A VOAdjust R1for V = 0 VOwith no JANUARY1994 darkerrorsin theElectricalCharacteristicstableinclude all dominantsourceof darkoutputvoltageis the pedestalvoltageappliedto the noninvertinginputof the op introducedtoprovidelinearoperationin the absenceof lightfallingon the pA, and contributesvirtuallyno offseterrorat biascurrentof the opampsummingjunction(negativeinput)is approximately165 pA.