Transcription of Power MOSFET - Vishay
1 Document Number: A, 16-Jun-081 Power MOSFETIRFP450A, SiHFP450 AVishay SiliconixFEATURES Low Gate Charge Qg Results in Simple DriveRequirement Improved Gate, Avalanche and Dynamic dV/dtRuggedness Fully Characterized Capacitance andAvalanche Voltage and Current Effective Coss Specified Lead (Pb)-free AvailableAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power SwitchingTYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge, Full Bridge PFC BoostNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig.)
2 11).b. Starting TJ = 25 C, L = mH, RG = 25 , IAS = 14 A (see fig. 12).c. ISD 14 A, dI/dt 130 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)500 RDS(on) ( )VGS = 10 V (Max.) (nC)64 Qgs (nC)16 Qgd (nC)26 ConfigurationSingleN-Channel MOSFET GDSTO-247 GDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-247 Lead (Pb)-freeIRFP450 APbFSiHFP450A-E3 SnPbIRFP450 ASiHFP450 AABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS500V Gate-Source VoltageVGS 30 Continuous Drain CurrentVGS at 10 VTC = 25 C ID14 ATC = 100 C Drain CurrentaIDM 56 Linear Derating C Single Pulse Avalanche EnergybEAS 760mJ Repetitive Avalanche CurrentaIAR 14A Repetitive Avalanche EnergyaEAR19mJ Maximum Power DissipationTC = 25
3 C PD190W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 C Soldering Recommendations (Peak Temperature)for 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Number: 912302S-81271-Rev. A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-40 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain)
4 = 25 C, unless otherwise notedPARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 500--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 30 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V --25 A VDS = 400 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = Forward Transconductance gfs VDS = 50 V, ID = DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = MHz, see fig.
5 5 -2038-pFOutput Capacitance Coss -307-Reverse Transfer Capacitance Crss -10-Output Capacitance Coss VGS = 0 V; VDS = V, f = MHz2859 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = MHz81 Effective Output Capacitance Coss = 0 V; VDS = 0 V to 400 Vc96 Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b--64nC Gate-Source Charge Qgs --16 Gate-Drain ChargeQgd --26 Turn-On Delay Time td(on) VDD = 250 V, ID = 14 A, RG = , RD = 17 , see fig.
6 10b-15-nsRise Timetr -36-Turn-Off Delay Time td(off) -35-Fall Time tf -29-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--14 APulsed Diode Forward CurrentaISM--56 Body Diode VoltageVSDTJ = 25 C, IS = 14 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 14 A, dI/dt = 100 A/ sb-487731nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)SDG Document Number: A, 16-Jun-083 IRFP450A, SiHFP450 AVishay SiliconixTYPICAL CHARACTERISTICS 25 C, unless otherwise notedFig.
7 1 - Typical Output CharacteristicsFig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature Number: 912304S-81271-Rev. A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area Document Number: A, 16-Jun-085 IRFP450A, SiHFP450 AVishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig.
8 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsPulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) +-VDDD river15 V20 VIASVDStp Number: 912306S-81271-Rev. A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 12d - Typical Drain-to-Source Voltage vs. Avalanche CurrentFig. 13b - Gate Charge Test CircuitQGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: A, 16-Jun-087 IRFP450A, SiHFP450 AVishay SiliconixFig.
9 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 V* VDDISDD river gate VDSwaveformInductor currentD = +-+++---* VGS = 5 V for logic level devicesPeak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by RG Driver same type as ISD controlled by duty factor "D" - device under layout considerations Low stray inductance Ground plane Low leakage inductance current transformerRGPackage Siliconix Revision: 08-Jan-20201 Document Number.
10 91360 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (High Voltage)VERSION 1: FACILITY CODE = 9 Notes(1)Package reference: JEDEC TO247, variation AC(2)All dimensions are in mm(3)Slot required, notch may be rounded(4)Dimension D and E do not include mold flash. Mold flash shall not exceed mm per side. These dimensions are measured at the outermost extremes of the plastic body(5)Thermal pad contour optional with dimensions D1 and E1(6)Lead finish uncontrolled in L1(7) P to have a maximum draft angle of to the top of the part with a maximum hole diameter of mm(8)Dimension b2 and b4 does not include dambar protrusion.
