Precision Monolithic Quad SPST CMOS Analog …

1 vishay SiliconixDG411, DG412, DG413 Document Number: 70050S11-1185-Rev. G, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Monolithic quad spst cmos Analog SwitchesDESCRIPTIONThe DG411 series of Monolithic quad Analog switches wasdesigned to provide high speed, low error switching ofprecision Analog signals. Combining low power ( W)with high speed (tON: 110 ns), the DG411 family is ideallysuited for portable and battery powered industrial and achieve high-voltage ratings and superior switchingperformance, the DG411 series was built on VishaySiliconix s high voltage silicon gate process.

2 An epitaxiallayer prevents switch conducts equally well in both directions whenon, and blocks input voltages up to the supply levels DG411, DG412 respond to opposite control logic asshown in the Truth Table. The DG413 has two normally openand two normally closed Halogen-free according to IEC 61249-2-21 Definition 44 V supply max. rating 15 V Analog signal range On-resistance - RDS(on): 25 Fast switching - tON: 110 ns Ultra low power - PD: W TTL, cmos compatible Single supply capability Compliant to RoHS Directive 2002/95/ECBENEFITS Widest dynamic range Low signal errors and distortion Break-bevor-make switching action Simple interfacingAPPLICATIONS Precision automatic test equipment Precision data acquisition Communication systems Battery powered systems Computer peripheralsFUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONL ogic 0 VLogic 1 V Logic 0 VLogic 1 V 1 2 3 4 5 6 7 8 16 15 14 13 12

3 11 10 9 T op V iew IN1IN2D1D2S1S2V-V+GNDVLS4S3D4D3IN4IN3 Dual-In-Line and SOIC Top ViewS1S2V-V+NCNCGNDVLS4S3 LCCNC IN3D3D4IN4NC IN2D2D1IN1 Key9101112134567812320191415161718DG41 1 DG411 TRUTH TABLE LogicDG411DG4120 ONOFF1 OFFONTop ViewS1S2V-V+NCNCGNDVLS4S3 LCCNC IN3D3D4IN4NC IN2D2D1IN1 Key91011121345678123201914151617181 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 T op V iew IN 1 IN2D 1 D2S 1 S2V- V+GND VLS 4 S3D 4 D3IN 4 IN3 Dual-In-Line and SOIC DG413 DG413 TRUTH TABLE LogicSW1, SW4SW2, SW30 Number: 70050S11-1185-Rev.

4 G, 13-Jun-11 vishay SiliconixDG411, DG412, DG413 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT : a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current All leads welded or soldered to PC Derate 6 mW/ C above 25 Derate mW/ C above 75 Derate 12 mW/ C above 75 C. ORDERING INFORMATION Temp. RangePackagePart Number- 40 C to 85 C16-pin plastic DIPDG411 DJDG411DJ-E3DG412 DJDG412DJ-E3DG413 DJDG413DJ-E316-pin narrow SOICDG411 DYDG411DY-E3DG411DY-T1DG411DY-T1-E3DG412 DYDG412DY-E3DG412DY-T1DG412DY-T1-E3DG413 DYDG413DY-E3DG413DY-T1DG413DY-T1-E316-pi n TSSOPDG411DQ-E3DG411DQ-T1-E3DG412DQ-E3DG 412DQ-T1-E3DG413DQ-E3DG413DQ-T1-E3 ABSOLUTE MAXIMUM RATINGSP arameter LimitUnit V + to V -44 VGND to V - 25VL(GND - ) to (V+) + Inputsa, VS, VD(V-) -2 to (V+)

5 + 2or 30 mA, whichever occurs firstContinuous Current (Any terminal)30mAPeak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)100 Storage Temperature (AK, AZ suffix)- 65 to 150 C(DJ, DY suffix)- 65 to 125 Power Dissipation (Package)b 16-pin plastic DIPc470mW16-pin narrow SOICd60016-pin CerDIPe900 LCC-20e900 Document Number: 70050S11-1185-Rev. G, SiliconixDG411, DG412, DG413 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Parameter Symbol Test Conditions Unless Specified V + = 15 V, V - = - 15 VVL = 5 V, VIN = V, Suffix - 55 C to 125 CD Suffix - 40 C to 85 CUnit SwitchAnalog Signal RangeeVANALOGFull- 1515- 1515 VDrain-Source On-ResistanceRDS(on)

6 V + = V, V - = - VIS = - 10 mA, VD = VRoomFull2535453545 Switch Off Leakage CurrentIS(off)V + = , V - = - V VD = V, VS = V RoomFull (off)RoomFull On Leakage CurrentID(on)V + = V, V - = - VVS = VD = VRoomFull ControlInput Current, VIN LowIILVIN under test = AInput Current, VIN HighIIHVIN under test = CharacteristicsTu r n - O n T i m etONRL = 300 , CL = 35 pFVS = 10 V, see figure 2 RoomFull110175240175220nsTurn-Off TimetOFFRoomFull100145160145160 Break-Before-Make Time DelaytDDG413 only, VS = 10 VRL = 300 , CL = 35 pFRoom25 Charge InjectionQVg = 0 V, Rg = 0 CL = 10 nFRoom5pCOff IsolationeOIRRRL = 50 CL = 5 pF.

7 F = 1 MHz Room68dBChannel-to-Channel CrosstalkeXTA L KRoom85 Source Off CapacitanceeCS(off)f = 1 MHzRoom9pFDrain Off CapacitanceeCD(off)Room9 Channel On CapacitanceeCD(on)Room35 Power SuppliesPositive Supply CurrentI+V + = V, V - = - V VIN = 0 V or 5 V ANegative Supply CurrentI-RoomFull- 1- 5- 1- 5 Logic Supply CurrentIGNDRoomFull- 1- 5- 1- Number: 70050S11-1185-Rev. G, 13-Jun-11 vishay SiliconixDG411, DG412, DG413 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT to process option = 25 C, Full = as determined by the operating temperature Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data by design.

8 Not subject to production VIN = input voltage to perform proper function. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device CHARACTERISTICS (25 C, unless otherwise noted)SPECIFICATIONSa (for Unipolar Supplies) Parameter Symbol Test Conditions Unless Specified V + = 12 V, V - = 0 VVL = 5 V, VIN = V, Suffix - 55 C to 125 CD Suffix - 40 C to 85 CUnit SwitchAnalog Signal RangeeVANALOGFull1212 VDrain-Source On-ResistanceRDS(on)

9 V + = V, IS = - 10 mA, VD = 3 V, 8 VRoomFull408010080100 Dynamic CharacteristicsTu r n - O n T i m etONRL = 300 , CL = 35 pFVS = 8 V, see figure 2 RoomHot175250400250315nsTurn-Off TimetOFFRoomHot95125140125140 Break-Before-Make Time DelaytDDG413 only, VS = 8 VRL = 300 , CL = 35 pFRoom25 Charge InjectionQVg = 6 V, Rg = 0 , CL = 10 nF Room25pCPower SuppliesPositive Supply CurrentI+V + = V, VIN = 0 V or 5 V ANegative Supply CurrentI-RoomHot- 1- 5- 1- 5 Logic Supply CurrentIGNDRoomHot- 1- 5- 5On-Resistance vs.

10 VD and Power Supply VoltageVD - Drain Voltage (V)- 20- 15- 10- 50510152045403530252015105050 RDS(on)- Drain-Source On-Resistance ( )T A = 25 C 5 V 8 V 10 V 12 V 15 V 20 VOn-Resistance vs. VD and Unipolar Supply Voltage0 2 4 6 8 101214161820050100150200250300 VVL = 5 VV+ = 3 VVL = 3 V8 VV+ = 5 V12 V15 V20 VVD - Drain Voltage (V)Document Number: 70050S11-1185-Rev. G, SiliconixDG411, DG412, DG413 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SU