REF200 Dual Current Source and Current Sink datasheet (Rev. B)

1 Product Sample & Technical Tools & Support & Reference Folder Buy Documents Software Community Design REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015. REF200 Dual Current Source and Current Sink 1 Features 3 Description 1 Completely Floating: No Power Supply or Ground The REF200 combines three circuit building-blocks Connections on a single monolithic chip: two 100- A Current sources and a Current mirror. The sections are High Accuracy: 100 A dielectrically isolated, making them completely Low Temperature Coefficient: 25 ppm/ C independent. Also, because the Current sources are Wide Voltage Compliance: V to 40 V two-terminal devices, they can be used equally well as Current sinks. The performance of each section is Includes Current Mirror individually measured and laser-trimmed to achieve high accuracy at low cost.

2 2 Applications The sections can be pin-strapped for currents of 50. Sensor Excitation A, 100 A, 200 A, 300 A, or 400 A. External Biasing Circuitry circuitry can obtain virtually any Current . These and Offsetting Current Loops many other circuit techniques are shown in the Application Information section of this data sheet. Low Voltage References Charge-pump Circuitry The REF200 is available in an SOIC package. Hybrid Microcircuits Device Information(1). PART NUMBER PACKAGE BODY SIZE (NOM). REF200 SOIC (8) mm mm (1) For all available packages, see the package addendum at the end of the data sheet. Functional Block Diagram I1 I2 Mirror High High Substrate In 8 7 6 5. 100 A 100 A. 1 2 3 4. I1 I2 Mirror Mirror Low Low Common Out 1.

3 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015 Table of Contents 1 Features .. 1 8 Application and Implementation .. 9. 2 Applications .. 1 Application 9. 3 Description .. 1 Typical Application .. 9. 4 Revision 2 System Examples .. 12. 5 Pin Configuration and Functions .. 3 9 Power Supply 25. 6 4 10 25. Absolute Maximum Ratings .. 4 Layout Guidelines .. 25. ESD Ratings .. 4 Layout Example .. 25. Recommended Operating 4 11 Device and Documentation Support .. 26. Electrical 4 Documentation Support.

4 26. Typical Characteristics .. 5 Community 26. 7 Detailed Description .. 7 Trademarks .. 26. Overview .. 7 Electrostatic Discharge Caution .. 26. Functional Block Diagram .. 7 Glossary .. 26. Feature 7 12 Mechanical, Packaging, and Orderable Device Functional 8 Information .. 26. 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the Current version. Changes from Revision A (July 2015) to Revision B Page Changed multiple instances of "mA" in data sheet back to " A" (typo) .. 1. Changes from Original (September 2000) to Revision A Page Added ESD Ratings and Recommended Operating Conditions tables, and Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information 1.

5 2 Submit Documentation Feedback Copyright 2000 2015, Texas Instruments Incorporated Product Folder Links: REF200 . REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015. 5 Pin Configuration and Functions D Package 8-Pin SOIC. Top View I1 Low 1 8 I1 High I2 Low 2 7 I2 High Mirror Common 3 6 Substrate Mirror Output 4 5 Mirror Input Pin Functions PIN. DESCRIPTION. NAME NO. I1 Low 1 Current Source 1 low terminal I2 Low 2 Current Source 2 low terminal Mirror Common 3 Current mirror common terminal Mirror Output 4 Current mirror output terminal Mirror Input 5 Current mirror input terminal Substrate 6 Substrate (Usually connected to most negative potential in the system). I2 High 7 Current Source 2 high terminal I1 High 8 Current Source 1 high terminal Copyright 2000 2015, Texas Instruments Incorporated Submit Documentation Feedback 3.

6 Product Folder Links: REF200 . REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015 6 Specifications Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1). MIN MAX UNIT. Applied voltage 6 40 V. Reverse Current 350 A. Voltage between any two sections 80 V. Operating temperature 40 85 C. Tstg Storage temperature 40 125 C. (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 ESD Ratings VALUE UNIT. (1). V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 750 V. (1) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted). MIN NOM MAX UNIT. VCOMP Compliance voltage 40 V. TA Specified temperature range 25 85 C. Electrical Characteristics at TA = 25 C, VS = 15 V (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT. Current SOURCES. Current accuracy 1%. Current match 1%. Temperature drift Specified temperature range 25 ppm/ C.

8 V to 40 V 20 100. Output impedance M . V to 30 V 200 500. BW = Hz to 10 Hz 1 nAp-p Noise f = 10 kHz 20 pA/ Hz Voltage compliance (1%) TMIN to TMAX See Typical Characteristics Capacitance 10 pF. Current MIRROR I = 100 A unless otherwise noted Gain 1 Temperature drift 25 ppm/ C. Impedance (output) 2 V to 40 V 40 100 M . Nonlinearity I = 0 A to 250 A Input voltage V. Output compliance voltage See Typical Characteristics Frequency response ( 3 dB) Transfer 5 MHz 4 Submit Documentation Feedback Copyright 2000 2015, Texas Instruments Incorporated Product Folder Links: REF200 . REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015. Typical Characteristics at TA = 25 C, VS = 15 V (unless otherwise noted).

9 600. 501. 100 500. 454. Distribution of three 400 production lots . Quantity (Units). Current ( A). 1284 Current Sources. 300. Drift specified by 85 C. box method 200. (See text). 117. 100 86. 66. 30 15. 2 5 6 0 1 1. 0. 50 25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 55 60 65. Temperature ( C) Temperature Drift (ppm/ C). Figure 1. Current Source Typical Drift vs Temperature Figure 2. Current Source Temperature Drift Distribution 101 Current ( A). Current ( A). 25 C. 100 100. 55 C. 125 C. 99 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5. Voltage (V) Voltage (V). Figure 3. Current Source Output Current vs Voltage Figure 4. Current Source Output Current vs Voltage 1000. 900. 800 12kW 7V. Reverse Current ( A).

10 700 Reverse Voltage Circuit Model 600. 500 5kW. 400 Safe Reverse Current 300. 200. Safe Reverse Voltage 100. 0. 0 2 4 6 8 10 12. Reverse Voltage (V). Figure 5. Current Source Current Noise ( Hz to 10 Hz) Figure 6. Current Source Reverse Current vs Reverse Voltage Copyright 2000 2015, Texas Instruments Incorporated Submit Documentation Feedback 5. Product Folder Links: REF200 . REF200 . SBVS020B SEPTEMBER 2000 REVISED JULY 2015 Typical Characteristics (continued). at TA = 25 C, VS = 15 V (unless otherwise noted). 5 4 Data from Three VO =. Representative Units 3 Nonlinearity (% of 250 A). VO = 1V (Least-square fit). 2 1 Error (%). 0 0. 1 VO = 2 3 4 5 10 A 100 A 1mA 0 50 100 150 200 250. Mirror Current (A) Current ( A).