S2301 : SiC Power Devices - Rohm

1 S2301 . N-channel SiC Power MOSFET bare die Data Sheet VDSS 1200V. RDS(on) (Typ.) 80mW. ID 40A*1. lFeatures lInner circuit 1) Low on-resistance (D). 2) Fast switching speed (G) Gate (D) Drain 3) Fast reverse recovery (S) Source (G). 4) Easy to parallel *1 Body Diode 5) Simple to drive (S). lApplication Solar inverters DC/DC converters Switch mode Power supplies Induction heating Motor drives lAbsolute maximum ratings (Ta = 25 C). Parameter Symbol Value Unit Drain - Source voltage VDSS 1200 V. Continuous drain current Tc = 25 C ID *1 40 A. Pulsed drain current ID,pulse *2 80 A. Gate - Source voltage (DC) VGSS -6 to 22 V. Gate - Source surge voltage (Tsurge 300nsec) VGSS-surge*3 -10 to 26 V. Junction temperature Tj 175 C. Range of storage temperature Tstg -55 to +175 C. 2016 ROHM Co., Ltd. All rights reserved. 1/11 - S2301 Data Sheet lElectrical characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V.

2 Voltage VDS = 1200V, VGS = 0V. Zero gate voltage IDSS Tj = 25 C - 1 10 A. drain current Tj = 150 C - 2 - Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA. Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA. Gate threshold voltage VGS (th) VDS = VGS, ID = V. VGS = 18V, ID = 10A. Static drain - source RDS(on) *4 Tj = 25 C - 80 111 mW. on - state resistance Tj = 125 C - 125 - Gate input resistance RG f = 1 MHz, open drain - - W. *1 Limited only by maximum temperature allowed. *2 PW 10 s, Duty cycle 1%. *3 Example of acceptable Vgs waveform +26V. tsurge +22V. 0V. -6V. tsurge -10V. *4 Pulsed 2016 ROHM Co., Ltd. All rights reserved. 2/11 - S2301 Data Sheet lElectrical characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *4 VDS = 10V, ID = 10A - - S. Input capacitance Ciss VGS = 0V - 2080 - Output capacitance Coss VDS = 800V - 77 - pF. Reverse transfer capacitance Crss f = 1 MHz - 16 - Effective output capacitance, VGS = 0V.

3 Co(er) - 116 - pF. energy related VDS = 0V to 500V. Turn - on delay time td(on) *4 VDD = 400V, ID = 10A - 35 - Rise time tr *4 VGS = 18V/0V - 36 - ns Turn - off delay time td(off) *4 RL = 40W - 76 - Fall time tf *4 RG = 0W - 22 - VDD = 600V, ID=10A. Turn - on switching loss Eon *4 - 174 - VGS = 18V/0V. RG = 0W, L=500 H J. *4 *Eon includes diode Turn - off switching loss Eoff - 51 - reverse recovery lGate Charge characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *4 VDD = 400V - 106 - Gate - Source charge Qgs *4 ID = 10A - 27 - nC. *4. Gate - Drain charge Qgd VGS = 18V - 31 - Gate plateau voltage V(plateau) VDD = 400V, ID = 10A - - V. 2016 ROHM Co., Ltd. All rights reserved. 3/11 - S2301 Data Sheet lBody diode electrical characteristics (Source-Drain) (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Inverse diode continuous, IS *1 - - 40 A. forward current Tc = 25 C. Inverse diode direct current, ISM *2 - - 80 A.

4 Pulsed Forward voltage VSD *4 VGS = 0V, IS = 10A - - V. *4. Reverse recovery time trr - 31 - ns IF = 10A, VR = 400V. Reverse recovery charge Qrr *4 - 44 - nC. di/dt = 150A/ s Peak reverse recovery current Irrm *4 - - A. 2016 ROHM Co., Ltd. All rights reserved. 4/11 - S2301 Data Sheet lElectrical characteristic curves Typical Output Characteristics(I) Typical Output Characteristics(II). VGS= 18V VGS= 16V. 40 20. VGS= 20V VGS= 16V VGS= 20V. 18 VGS= 14V. 35. VGS= 18V VGS= 14V. 16. 30. 14 VGS= 12V. Drain Current : ID [A]. Drain Current : ID [A]. 25 12. 20 10. VGS= 12V. 8. 15. VGS= 10V 6 VGS= 10V. 10. 4. 5 Ta = 25 C Ta = 25 C. 2. Pulsed Pulsed 0 0. 0 2 4 6 8 10 0 1 2 3 4 5. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. Typical Output Characteristics(I) Typical Output Characteristics(II). 40 20. VGS= 20V VGS= 20V. 35 18. VGS= 18V VGS= 18V. 16. 30 VGS= 16V. 14. Drain Current : ID [A]. Drain Current : ID [A]. 25 VGS= 16V VGS= 12V VGS= 14V VGS= 10V.

5 12. VGS= 14V. 20 10 VGS= 12V. VGS = 10V. 15 8. 6. 10. 4. 5 Ta = 150 C Ta = 150 C. Pulsed 2 Pulsed 0 0. 0 2 4 6 8 10 0 1 2 3 4 5. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. 2016 ROHM Co., Ltd. All rights reserved. 5/11 - S2301 Data Sheet lElectrical characteristic curves Typical Transfer Characteristics Typical Transfer Characteristics (II). 100 40. VDS = 10V VDS = 10V. Pulsed 35. Pulsed 10 30. Drain Current : ID [A]. Drain Current : ID [A]. 25. Ta= 150 C. 1 Ta= 75 C 20. Ta= 150 C. Ta= 25 C. Ta= 75 C. Ta= -25 C 15 Ta= 25 C. Ta= -25 C. 10. 5. 0. 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20. Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]. Gate Threshold Voltage Transconductance vs. Drain Current vs. Junction Temperature 5 10. VDS = 10V VDS = 10V. Gate Threshold Voltage : V GS(th) [V]. ID = 10mA Pulsed 4. Transconductance : gfs [S]. 1. 3. 2 Ta = 150 C. Ta = 75 C. Ta = 25 C. Ta = -25 C. 1. 0 -50 0 50 100 150 1 10 100.

6 Junction Temperature : Tj [ C] Drain Current : ID [A]. 2016 ROHM Co., Ltd. All rights reserved. 6/11 - S2301 Data Sheet lElectrical characteristic curves Static Drain - Source On - State Static Drain - Source On - State Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature Static Drain - Source On-State Resistance Static Drain - Source On-State Resistance Ta = 25 C VGS = 18V. Pulsed Pulsed ID = 20A. : RDS(on) [ ]. : RDS(on) [ ]. ID = 10A. ID = 20A. ID = 10A. 0 0. 6 8 10 12 14 16 18 20 22 -50 0 50 100 150. Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ C]. Static Drain - Source On - State Resistance vs. Drain Current 1. Static Drain - Source On-State Resistance VGS = 18V. Pulsed : RDS(on) [ ]. Ta = 150 C. Ta = 75 C. Ta = 25 C. Ta = -25 C. 1 10 100. Drain Current : ID [A]. 2016 ROHM Co., Ltd. All rights reserved. 7/11 - S2301 Data Sheet lElectrical characteristic curves Typical Capacitance Coss Stored Energy vs. Drain - Source Voltage 10000 40.

7 Ta = 25 C. Coss Stored Energy : EOSS [uJ]. 1000 Ciss 30. Capacitance : C [pF]. Coss 100 Crss 20. 10 10. Ta = 25 C. f = 1 MHz VGS = 0V. 1 0. 1 10 100 1000 0 200 400 600 800. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. Switching Characteristics Dynamic Input Characteristics 10000 20. Ta = 25 C. tf Ta = 25 C. VDD = 400V. VDD = 400V. Gate - Source Voltage : VGS [V]. ID = 10A. 1000 VGS = 18V 15 Pulsed RG = 0 . Switching Time : t [ns]. Pulsed td(off). 100 10. tr 10 5. td(on). 1 0. 1 10 100 0 20 40 60 80 100 120. Drain Current : ID [A] Total Gate Charge : Qg [nC]. 2016 ROHM Co., Ltd. All rights reserved. 8/11 - S2301 Data Sheet lElectrical characteristic curves Typical Switching Loss Typical Switching Loss vs. Drain - Source Voltage vs. Drain Current 300 1200. Ta = 25 C 1100. ID=10A Ta = 25 C. 250 1000. VGS = 18V/0V VDD=600V. RG=0W 900 VGS = 18V/0V. Switching Energy : E [ J]. Switching Energy : E [ J]. 200 L=500 H 800 RG=0W. Eon L=500 H Eon 700.

8 150 600. 500. 100 400. 300. 50 Eoff 200. Eoff 100. 0 0. 0 200 400 600 800 1000 0 5 10 15 20 25 30 35. Drain - Source Voltage : VDS [V] Drain - Current : ID [A]. Typical Switching Loss vs. External Gate Resistance 500. 450 Ta = 25 C. VDD=600V. 400 ID=10A. VGS = 18V/0V. Switching Energy : E [ J]. 350. L=500 H. 300 Eon 250. 200. 150. Eoff 100. 50. 0. 0 5 10 15 20 25 30. External Gate Resistance : RG [W]. 2016 ROHM Co., Ltd. All rights reserved. 9/11 - S2301 Data Sheet lElectrical characteristic curves Inverse Diode Forward Current Reverse Recovery Time vs. Source - Drain Voltage Diode Forward Current 100 1000. VGS = 0V Ta = 25 C. Inverse Diode Forward Current : IS [A]. Pulsed di / dt = 150A / us Reverse Recovery Time : trr [ns]. VR = 400V. 10 VGS = 0V. Pulsed 1 Ta = 150 C 100. Ta = 75 C. Ta = 25 C. Ta = -25 C. 10. 0 1 2 3 4 5 6 7 8 1 10 100. Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]. 2016 ROHM Co., Ltd. All rights reserved. 10/11 - S2301 Data Sheet lMeasurement circuits Switching Time Measurement Circuit Switching Waveforms Gate Charge Measurement Circuit Gate Charge Waveform Switching Energy Measurement Circuit Switching Waveforms Eon = ID VDS Eoff = ID VDS.

9 Same type device as Irr Vsurge VDS. ID. ID. Reverse Recovery Time Measurement Circuit Reverse Recovery Waveform 2016 ROHM Co., Ltd. All rights reserved. 11/11 - Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products.

10 The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment ( cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and Power transmission systems.