SEPTEMBER 2011 Dual Channel, High-Voltage Multi ...

1 OUTAP0P1P2N2N1N0HV0 AHV2 AHV1 ALV1 ALV2 ALV0 AChannel ACH_AInputLogic,LevelTranslatorP1P2N2N1 INP0 AINP1 AINP2 AINN0 AINN1 AINN2 APCLKINVDD VEEHV0 n LV0nHV1 n LV1nHV2 n LV2nGNDCWGNDVAACWINAVCWnVCWAGNDCWAP0P1P2 N2N1N0HV0 BHV2 BHV1 BLV1 BLV2 BLV0 BCH_BInputLogic,LevelTranslatorP1P2N2N1 VCWBGNDCWBGNDCWBOUTBCWINACWINBC hannel BGNDCWAEN\PDM\ SEPTEMBER2011 REVISEDJANUARY2012 DualChannel, High-Voltage Multi -LevelOutputFullyIntegratedUltrasou ndTransmitterCheckforSamples:TX5171 FEATURESDESCRIPTIONTheTX517isa fullyintegrated,dualchannel,high Upto200 VppinDifferentialModedemandingmedicalUlt rasoundapplicationsthat PeakOutputCurrent: Multi -LevelOutputpeakoutputcurrents,with 200 Vppswings. Differential: 17 LevelsTheTX517isacompletetransmittersolu tionwith SingleEnded: 5 Levelslow-voltageinputlogic,leveltransla tors,gatedrivers Integrated:andP-channelandN-ChannelMOSFE T sforeach LevelTranslatorchannel.

2 DriverTheTX517alsoincorporatesa CWoutputstage. HighVoltageOutputStagesTheTX517isavailab leinaBGApackagethatis CWoutputLead-Free(RoHScompliant) C to85 C. TXOutputUpdateRate Upto100 MSPS17 LevelPulserChip: MinimalExternalComponentsThechipconsists oftwo5-levelchannelstoformasingle17-leve ltransmittercellwhenusedin SmallPackage:BGA13x13mmconjunctionwitha is designedtodrivethetransducernotonlyatvar iousoutputlevels,butAPPLICATIONS alsotomodulatethewidthoftheoutputpulsest o MedicalUltrasoundobtaintheaddedflexibili tyofpulse-width-modulationspectralshapin g. HighVoltageSignalGenerator1 Pleasebeawarethatanimportantnoticeconcer ningavailability,standardwarranty,anduse in 2011 2012, VCWBEN\VAABNCNCINP1B INN1B INP2 BABNCLV1 BLV1 BLV1 BLV1 BLV1 BGNDNCNCGNDVAAC INN2 BBCOUTBLV1 BLV1 BLV1 BLV1 BLV1B CWINBVEEVEEVEEVEEINN0 BCDNCLV1 BLV1 BLV1 BLV1 BLV1B GNDCWB VEEVEEVEEVEEINP0 BDELV2 BLV1 BLV1 BLV1 BLV1 BLV1 BVDDBVEEVEEVEEVEEPCLKINEFLV1 BLV1 BLV1 BLV1 BLV1 BLV1 BLV0 BVEEVEEVEEVEEGNDFGLV1 ALV1 ALV1 ALV1 ALV1 ALV1 ALV0 AVEEVEEVEEVEEVDDGHLV2 ALV1 ALV1 ALV1 ALV1 ALV1 AVDDAVEEVEEVEEVEECWINAHJNCLV1 ALV1 ALV1 ALV1 ALV1A GNDCWA VEEVEEVEEVEEINP0 AJKOUTALV1 ALV1 ALV1 ALV1 ALV1 AGNDVEEVEEVEEVEEINN0 AKLNCLV1 ALV1 ALV1 ALV1 ALV1 AGNDNCNCGNDVAAD INN2 ALMHV2 AGNDHV1 AHV0A VCWAPDM\VAAABIASNCINP1A INN1A INP2AM123456789101112TX517 SLOS725A SEPTEMBER2011 (1)

3 PACKAGEDDEVICESPACKAGETYPEPACKAGEMARKING TRANSPORTMEDIA,QUANTITYECOSTATUS(2)TX517 IZCQBGA-144TX517 TrayPb-Free,Green(1)NOTE:ThesePackagesco nformtoLead-FreeandGreenManufacturingSpe cifications(2)Eco- :TidefinesGreentomeanLead(Pb)-Freeandin addition,useslesspackagematerialsthatdon otcontainhalogens,includingbromine(Br),o rantimony(Sb) :NotyetavailableLead(Pb)-Free;forestimat edconversiondates, :TidefinesLead(Pb)-FreetomeanRoHScompati ble,includinga ,and,if designedtobesoldered,suitableforusein 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 REVISEDJANUARY2012 PINFUNCTIONSPINNAMEDESCRIPTIONSUPPLIESVA AxInputLogicSupply(+ )VDD+5 VDriverSupplyVEE 5 VDriverSupplyHV0A,HV0 BPositiveSupplyofLow-voltageFETO utputstage;ChannelA andBLV0A,LV0 BNegativeSupplyofLow-voltageFETO utputstage;ChannelA andBHV2A,HV2 BPositiveSupplyofIntermediatevoltageFETO utputstage; andBLV2A,LV2 BNegativeSupplyofIntermediatevoltageFETO utputstage; andBHV1A,HV1 BPositiveSupplyofHigh-voltageFETO utputstage;ChannelA andBLV1A,LV1 BNegativeSupplyofHigh-voltageFETO utputstage;ChannelA andBVCWA,VCWBS upplyconnectionsforCWFET outputstage;ChannelA andBGNDG roundconnection;DriverGNDCWA,GNDCWBG roundconnectionforCWFET outputstageofChannelA andBBIASC onnecttoVAA(+ );usedforinternalbiasing;high-impedancei nputINPUTSINP0A,INP0 BLogicinputsignalfortheLow-voltageP-FETs tageofchannelA andB;Low= ON,High= OFF.

4 ControlsHV0A, ,INN0 BLogicinputsignalfortheLow-voltageN-FETs tageofchannelA andB;Low= OFF,High= ON. ControlsLV0A, ,INP2 BLogicinputsignalfortheIntermediatevolta geP-FETstageofchannelA andB;Low= ON,High= , ,INN2 BLogicinputsignalfortheIntermediateVolta geN-FETstageofchannelA andB;Low= OFF,High= , ,INP1 BLogicinputsignalfortheHigh-voltageP-FET stageofchannelA andB;Low= ON,High= OFF. ControlsHV1A, ,INN1 BLogicinputsignalfortheHigh-voltageN-FET stageofchannelA andB;Low= OFF,High= ON. ControlsLV1A, 1 0 1 0 ; inputdatawillberetimedbytheinternal(T&H) usethismodewhenoperatingtheTX517withouta (1)theinputdatawillbypassthe(T&H).Thispi nis a commoncontrolforChannelA ;Low= power-down,High= a latch(T&H) high,the(T&H)circuitis in low,the(T&H)is in a commonclockinputforbothChannelA 2011 2012,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLink(s):TX517TX517 SLOS725A SEPTEMBER2011 (GND= 0V).

5 Overoperatingfree-airtemperature(unlesso therwisenoted)(1)VALUEUNITHigh-Voltage,P ositiveSupplyHV1,2referredtoOUTA/B, +80 VVDSHigh-Voltage,PositiveSupplyHV0referr edtoOUTA/B, +6 VHigh-VoltageVCWA/BsupplyreferredtoGNDCW A/B +16 VHigh-Voltage,NegativeSupplyLV1,2referre dtoOUTA/B, 40to+ ,NegativeSupplyLV0referredtoOUTA/B, 6 to+ :HV1-LV1andHV2 :HV0 LV012 VVDDD riverSupply, +6 VVEED riverSupply,negative 6 to+ +6 VLogicInputs(INPx,INNx,EN,PDM,PCLKIN,U) +6 VCWinputs(CWINA,CWINB) +11 VPeakSolderTemperature(2)260 CTJM aximumjunctiontemperature,anycondition(3 )150 CTJM aximumjunctiontemperature,continuousoper ation,longtermreliability(4)125 CTstgStoragetemperaturerange 65to150 CHBM500 VESD ratingsCDM750 VMM200V(1) recommendedoperatingconditions is (2)DevicecomplieswithJSTD-020D.(3)Theabs olutemaximumjunctiontemperatureunderanyc onditionis limitedbytheconstraintsofthesiliconproce ss.(4)Theabsolutemaximumjunctiontemperat ureforcontinuousoperationis (1)UNITSBGA(144)(ZCQ)PINS JAJunction-to-ambientthermalresistance28 JCtopJunction-to-case(top) C/W 25 (2)(3)WTA= 85 (TJ= 125 C)(1)Formoreinformationabouttraditionala ndnewthermalmetrics,seetheICPackageTherm alMetricsapplicationreport,SPRA953.

6 (2)ThisdatawastakenwiththeJEDECHigh-Ktes tPCB.(3)Powerratingis determinedwitha junctiontemperatureof125 C 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 , ,LV0B 5 ,HV2B03270 VLV2A,LV2B 30 ,HV1B>HV0and>HV26170 VLV1A,LV1B 30 <LV0and<LV2 VVCWA,VCWB01115 VMaximumDELTA betweenHV1toLV1andHV2toLV2100 VINNx,INPx,EN,PDM,PCLKIN,U0 VAAVINCWA,INCWB0510 VINNxx,INPxxinputsamplerate1100 MspsINNxx,INPXX inputunitinterval101000nsPCLKIN inputfrequency1100 MHzAmbientTemperature,TA085 CCopyright 2011 2012,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLink(s):TX517TX517 SLOS725A SEPTEMBER2011 :TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW=11V,RL=100 toGNDforOUTA,RL=100 toGNDforOUTB, , (1)HV0/LV0 SIGNALPATH DCPERFORMANCEP-CHANNELE ffectiveresistance,RDSon+ RdiodeHV0= 2 V,OUTX= 750mVto AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation12%Cload= 100 to0 VOutputsaturationcurrentRL= 5 to 30V ,RDSon+ RdiodeLV0= 2V,OUTX= AMaxoutputpowertoMinoutputpower,Effectiv eResistanceVariation5%CLoad= 100 to0 VOutputsaturationcurrentRL= 5 to+ ACPERFORMANCES ingle-toneoutputfrequency1100 MspsBf = ,measuredusingtransformerat2ndOrderharmo nicdistortion(whenusing35dBcCsecondaryco ilwithRL= 100 transformerbridge)

7 10%to90%of0 V to+ V to VouttfOutputfalltime1nsCFigure8 Input50%toOutput50%tpr, tpfPropagationDelay30nsBFigure8HV2/LV2 SIGNALPATH DCPERFORMANCEP-CHANNELE ffectiveresistance,RDSon+ RdiodeHV2= 30V toHV2= AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation12%Cload= 100 to0 VOutputsaturationcurrentHV2= 60V;RL= 5 toGND ,RDSon+ RdiodeLV2= 10V toLV2= AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation4%Cload= 100 to0 VOutputsaturationcurrentLV2= 60V;RL= 5 ACPERFORMANCES ingle-toneOutputFrequency1100 MspsBf = ,measuredusingtransformerat2ndOrderharmo nicdistortionwhenusing50dBcCsecondarycoi lwithRL= 100 transformerbridge10%to90%of0 V to+ V to VouttfOutputfalltime3nsCFigure8 Input50%toOutput50%tpr, tpfPropagationdelay25nsBFigure8(1)Testle vels:(A)100%testedat25 (B)Limitssetbycharacterizationandsimulat ion.(C) 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 REVISEDJANUARY2012 ELECTRICALCHARACTERISTICSAllSpecificatio nsat:TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW= 11V,RL= 100 toGNDforOUTA,RL= 100 toGNDforOUTB, , (1)HV1/LV1 SIGNALPATH DCPERFORMANCEP-CHANNELE ffectiveresistance,RDSon+ RdiodeHV1= 60V toHV1= AMaxoutputpowertoMinoutputpowerEffective resistancevariation11%Cload= 100 toGNDO utputsaturationcurrentHV1= 60V;RL= 5 toGND 2 AAOutputvoltage58 VCN-CHANNELE ffectiveresistance,RDSon+ RdiodeLV1= 20V to AMaxoutputpowertoMinoutputpowerEffective resistancevariation3%Cload= 100 to0 VOutputsaturationcurrentLV1= 60V.

8 RL= 5 20 VCHV1/LV1 SIGNALPATH ACPERFORMANCES ingle-toneoutputfrequency1100 MspsBf = ,measuredusingtransformerat2ndOrderharmo nicdistortion(whenusing60dBcCsecondaryco ilwithRL= 100 transformerbridge)10%to90%of0 V to+ V to VouttfOutputfalltime3nsCFigure8 Input50%toOutput50%tpr, tpfPropagationDelay25nsBFigure8(1)Testle vels:(A)100%testedat25 (B)Limitssetbycharacterizationandsimulat ion.(C) :TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW= 11V,RL= 100 toGNDforOUTA,RL= 100 toGNDforOUTB, , (1)CWSIGNALPATH DCPERFORMANCEP-CHANNELE ffectiveresistance,RDSon+ RdiodeVCW= AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation30%Cload= 100 to0 VOutputsaturationcurrentRL= 5 to 20V ,RDSon+ RdiodeOUTX= 1 V to2 V91418 AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation10%Cload= 100 to0 VOutputsaturationcurrentRL= 5 (1)Testlevels:(A)100%testedat25 (B)Limitssetbycharacterizationandsimulat ion.

9 (C) 2011 2012,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLink(s):TX517TX517 SLOS725A SEPTEMBER2011 (continued)AllSpecificationsat:TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW= 11V,RL= 100 toGNDforOUTA,RL= 100 toGNDforOUTB, , (1)CWSIGNALPATH ACPERFORMANCE(2) = 1 MHz,measuredusingtransformeratsecondaryc oilwith47dBcCRL= 100 2ndOrderharmonicdistortionf = 5 MHz,measuredusingtransformeratsecondaryc oilwith33dBcCRL= 100 SlewRate+ (PositiveEdge) ,measuredusingtransformeratsecondarycoil withRL= 100 SlewRate (NegativeEdge) V to+VouttrOutputrisetime30nsCFigure810%to 90%of0 V to VouttfOutputfalltime10nsCFigure8 Input50%toOutput50%tpr, tpfPropagationDelay25nsBFigure8AC-couple dgatedrivetimeconstantfor102030 ABHighinputcurrentCWINX= ABCWINX= 0 V to0 VLOGICCHARACTERISTICS INNXX,INPXX,EN\,PDM\,PCLKIN pinsINNxx,INPxx,PCLKIN@10 MHz6 InputcapacitanceEN\@ ABMinimumclockperiod,tperFigure9, PCLKIN10nsBMinimumclockhightime,tminFigu re9, , PCLKIN,INNxx,INPxx0nsBthHoldtimeFigure9, PCLKIN,INNxx, (Hi-ZOutput)VTEST= 20V1G CPowerDownMode(Hi-ZOutput)Outputcapacita nce165pFC@1to100 MHZL eakagecurrentPowerDownMode(Hi-ZOutput)VT EST= AAINTERNALGATECHARGECHARACTERISTICSHV0 (3) (1)Testlevels:(A)100%testedat25 (B)Limitssetbycharacterizationandsimulat ion.

10 (C)Typicalvalueonlyforinformation.(2) transformeris neededtoenableCWoutput.(3)Inputgatecharg eis theamountofchargetochangetheinternalFETg atesofa givenoutputfromeithera lowtoa highstateorfromahightoa andN ordertoswitchtheinternalFET s ata 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 REVISEDJANUARY2012 ELECTRICALCHARACTERISTICSAllSpecificatio nsat:TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW= 11V,RL= 100 toGNDforOUTA,RL= 100 toGNDforOUTB, , (1)POWERSUPPLYT otalQuiescentCurrent(PWMode)PowerINPxx= 1,INNxx= 0,PCLKIN=0 or11315mAAsupplyVDDT otalQuiescentCurrent(PWMode)PowerINPxx= 1,INNxx= 0,PCLKIN=0 or1 10 8mAAsupplyVEET otalQuiescentCurrent(PWMode)PowerINPxx= 1,INNxx= 0,PCLKIN=0 or1 3 2mAAsupplyVAAHV0/LV01723 Inputpattern= 10cyclesquarewave,5%DynamicCurrentConsum ption(PWMode)dutycycleat10 Msps(5 MHz)onnotedHV1 transformerand100ohmdifferentialload, 15 10 Inputpattern= 10cyclesquarewave,5%DynamicCurrentConsum ption(PWMode)dutycycleat10 Msps(5 MHz)onnotedHV1/LV1 15 transformerand100ohmdifferentialload, 15 4 10cyclesquarewave,5%DynamicCurrentConsum ption(PWMode)dutycycleat10 Msps(5 MHz)