Small Signal Zener Diodes - Vishay

1 Semiconductors Rev. , 20-Feb-181 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signal Zener DiodesDESIGN SUPPORT TOOLSFEATURES Silicon planar Zener Diodes The Zener voltages are graded according to the international E24 standard AEC-Q101 qualified available ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see CHARACTERISTICSPARAMETERVALUEUNITVZ range to 75 VTest current IZT ; 5mAVZ specificationPulse currentCircuit configurationSingleclick logo to get startedAvailableModelsAvailableORDERING INFORMATIONDEVICE NAMEORDERING CODETAPED UNITS PER REELMINIMUM ORDER QUANTITYBZT52-seriesBZT52C2V4-E3-08 to BZT52C75-E3-083000 (8 mm tape on 7" reel)15 000/boxBZT52B2V4-E3-08 to BZT52B75-E3-08 BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52C2V4-E3-18 to BZT52C75-E3-1810 000 (8 mm tape on 13" reel)10 000/boxBZT52B2V4-E3-18 to BZT52B75-E3-18 BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGEPACKAGE NAMEWEIGHTMOLDING COMPOUND FLAMMABILITY RATINGMOISTURE SENSITIVITY LEVELSOLDERING mgUL 94 V-0 MSL level 1(according J-STD-020)260 C/10 s at terminalsABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

2 PARAMETERTEST CONDITIONSYMBOLVALUEUNITP ower dissipationDiode on ceramic substrate mm; 5 mm2 pad areasPtot500mWDiode on ceramic substrate mm; mm2 pad areasPtot410mWZener currentSee table Electrical Characteristics Thermal resistance junction to ambient airValid provided that electrodes are kept at ambient temperatureRthJA300K/WJunction temperatureTj150 CStorage temperature rangeTstg-65 to +150 COperating temperature rangeTop-55 to +150 Semiconductors Rev. , 20-Feb-182 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IZT1 = 5 mA, IZT2 = 1 mA(1)Measured with pulses tp = 5 ms(2)IZT1 = mA(3)IZT2 = mA(4)Valid provided that electrodes are kept at ambient temperatureELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGE DYNAMIC RESISTANCETEMP.

3 COEFFICIENT ADMISSABLE Zener CURRENT (4)VZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZIZ at Tamb = 45 CIZ at Tamb = 25 CVmAVnA 10-4/ to (< 83)< 500-9 to (< 95)< 500-9 to (< 95)< 500-8 to (< 95)< 500-8 to (< 95)< 500-7 to (< 95)< 500-6 to (< 78)< 500-5 to + > (< 60)< 480-3 to + > 110010 (< 40)< 400-2 to + > 2100 (< 10)< 200-1 to + > (< 8)< 150+2 to + > 51004 (< 7)< 50+3 to + > (< 7)< 50+4 to + > 7100 (< 10)< 50+5 to + > (< 15)< 70+5 to + > (< 20)< 70+5 to + > 91007 (< 20)< 90+6 to + > 101009 (< 25)< 110+7 to + > 1110011 (< 30)< 110+7 to + > 1210013 (< 40)< 170+8 to + > 1410018 (< 50)< 170+8 to + > 1510020 (< 50)< 220+8 to + > 1710025 (< 55)< 220+8 to + > 1810028 (< 80)< 220+8 to + > 2010030 (< 80)< 250+8 to +101012 BZT52C30WT28303251> 10035 (< 80)< 250+8 to +10910 BZT52C33WU31333551> 2510040 (< 80)< 250+8 to +1089 BZT52C36WW34363851> 2710040 (< 90)< 250+8 to +1089 BZT52C39WX37394151> 2910050 (< 90)< 300+10 to +1278 BZT52C43WY40434651> 32100 60 (< 100)< 700+10 to +1267 BZT52C47WZ44475051> 35100 70 (< 100)< 750+10 to +1256 BZT52C51X148515451> 38100 70 (< 100)< 750+10 to + < 135 (2)< 1000 (3)typ.

4 +10 (2) < 150 (2)< 1000 (3)typ. +10 (2) < 200 (2)< 1000 (3)typ. +10 (2) < 250 (2)< 1500 (3)typ. +10 (2) Semiconductors Rev. , 20-Feb-183 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IZT1 = 5 mA, IZT2 = 1 mA(1)Measured with pulses tp = 5 ms(2)IZT1 = mA(3)IZT2 = mA(4)Valid provided that electrodes are kept at ambient temperatureELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGE DYNAMIC RESISTANCETEMP. COEFFICIENT ADMISSABLE Zener CURRENT (4)VZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZIZ at Tamb = 45 CIZ at Tamb = 25 CVmAVnA 10-4/ to (< 83)< 500-9 to (< 95)< 500-9 to (< 95)< 500-8 to (< 95)< 500-8 to (< 95)< 500-7 to (< 95)< 500-6 to (< 78)< 500-5 to + > (< 60)< 480-3 to + > 110010 (< 40)< 400-2 to + > (< 10)< 200-1 to + > (< 8)< 150+2 to + > 51004 (< 7)< 50+3 to + > (< 7)< 50+4 to + > (< 10)< 50+5 to + > (< 15)< 70+5 to + > (< 20)< 70+5 to + > 91007 (< 20)< 90+6 to + > 101009 (< 25)< 110+7 to + > 1110011 (< 30)< 110+7 to + > 1210013 (< 40)< 170+8 to + > 1410018 (< 50)< 170+8 to + > 1510020 (< 50)< 220+8 to + > 1710025 (< 55)< 220+8 to + > 1810028 (< 80)< 220+8 to + > 2010030 (< 80)< 250+8 to + > 10035 (< 80)< 250+8 to + > 2510040 (< 80)< 250+8 to + > 2710040 (< 90)

5 < 250+8 to + > 2910050 (< 90)< 300+10 to + > 3210060 (< 100)< 700+10 to + > 3510070 (< 100)< 750+10 to +1256 BZT52B51X150515251> 3810070 (< 100)< 750+10 to + < 135 (2)< 1000 (3)typ. +10 (2) < 150 (2)< 1000 (3)typ. +10 (2) < 200 (2)< 1000 (3)typ. +10 (2) < 250 (2)< 1500 (3)typ. +10 (2) Semiconductors Rev. , 20-Feb-184 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Forward characteristicsFig. 2 - Admissible Power Dissipation vs. Ambient TemperatureFig. 3 - Dynamic Resistance vs. Zener CurrentFig. 4 - Dynamic Resistance vs. Zener CurrentFig. 5 - Dynamic Resistance vs. Zener CurrentFig. 6 - Thermal Differential Resistance vs.

6 Zener = 100 CTJ = 25 C188885004003002001000mWPtot2001000 = 25 mA TJ = 25 = 25 C47 + 5143393610218121103543254321021 Rzth543210 12345234510100 VVZ at IZ = 5 mAnegativepositive VZTjRzth = RthA x VZ x Semiconductors Rev. , 20-Feb-185 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 7 - Dynamic Resistance vs. Zener VoltageFig. 8 - Temperature Dependence of Zener Voltage VoltageFig. 9 - Change of Zener Voltage vs. Junction TemperatureFig. 10 - Temperature Dependence of Zener Voltage VoltageFig. 11 - Change of Zener Voltage vs. Junction TemperatureFig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs.

7 Zener Voltage1812210075432754321 Rzj10Tj = 25 CIZ = 5 mA12345234510100 VVZ18135 2520151050- 5mV/ C VZTj12345234510100 VVZ at IZ = 5 mAV 27 V, I = 2 mA 5 mA1 mA20 mAIZ =18124VZ at IZ = 5 - 1- 120 140 C 18136 100806040200mV/ C VZTj020408060100 VVZ at IZ = 2 mAIZ = 5 mA181580 20 40 60 80 100 120 140 C 9 8 7 6 5 4 3 2 1 0- 1 VVZ at IZ = 5 mAIZ = 5 mA VZTj514336V18159 0- 10 100 V VZVZ at IZ = 5 mA VZ = rZth x IZIZ = 5 mAVZ >= 56 V; IZ = Semiconductors Rev. , 20-Feb-186 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs.

8 Zener VoltageFig. 14 - Breakdown CharacteristicsFig. 15 - Breakdown CharacteristicsFig. 16 - Breakdown Characteristics18160 543210 VVZ020406080100 VVZ at IZ = 5 mAIZ = 5 mAIZ = mAVZ = rzth x IZ 18111 Test current IZ 5 mA123456789010 = 25 VVZmA3020100lZ33 Test current IZ 5 mATj = 25 Semiconductors Rev. , 20-Feb-187 Document Number: 85760 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters (inches): ( ) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( )Cathode ( ) ( ) ( )1 ( ) ( ) ( ) ( )0 to 8 ( ) ( ) ( ) 4 - Date: 24. Sep. 2009 Document no.: (4)17432 Legal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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