TI Space Products (Rev. E)

1 TI Space ProductsInnovating your Space solution with leading-edge RHA and QMLV QMLC lass V QualifiedRadiation HardnessAssured per MIL-STD-883 Method 1019 Single Event EffectsCharacterized2 | TI Space Products Guide 2017 texas InstrumentsSpace Products GuideOverview/Table of ContentsTI Space ProductsTexas instruments offers the most comprehensive selection of leading-edge radiation hardness assured (RHA) and QMLV Products for Space flight. With a proven legacy of 55+ years in the Space market and supporting countless Space programs both domestically and internationally, TI is a trusted partner. We focus on radiation performance and best-in-class SWaP (Size, Weight, and Power) to enable leading-edge designs.

2 The breadth of TI s Space portfolio provides a full signal-chain solution. The portfolio includes the smallest RHA point-of-load power solutions, fast discrete SerDes, and some of the world s highest performance data s Space Products include MIL-PRF-38535 QML Class V and RHA components. These devices are typically supported with Total Ionizing Dose (TID) and Single Event Effects (SEE) test reports to address poten-tial product degradation in a Space environment. The test results for these devices are available at Applications Satellite bus/platform General payload Communications payload Imaging payload Data processing and storage (solid-state recorder) Telemetry sensors Inertial navigation (IMU/INS)

3 Manned vehicles Launch vehicles Power generation and distribution Health monitoring Analog OutputDigital OutputTable of contentsIntroduction 2 radiation Testing and Design Resources 3 Featured ProductsRadiation Hardened Power Management 4 radiation Hardened Interface 6 radiation Hardened Data Converters 8 radiation Hardened Amplifiers 10 radiation Hardened Clock and Timing 12TI Worldwide Technical Support 12 DSP SerDes PWM Controller Power FET Clocking Space Logic Point-of- Load Power Memory Low-Speed ADC MUX FPGA High- Speed ADC High- Speed DAC High-SpeedOp Amp High-SpeedOp Amp High-SpeedOp Amp TI Space Products PortfolioTI offers RHA and radiation -tolerant, hermetically packaged components high-lighted in each of the red blocks a complete list of TI s Space Products , see view this guide online, visit instruments TI Space Products Guide 2017 | 3 radiation Testing and Design ResourcesRadiation Testing radiation in Space High-energy protons, electrons and heavy ions are present in the natural Space environment that can adversely affect the operation of semiconduc-tors used in Space applications.

4 In Space , these particles generally have so much energy that they easily ionize atoms, freeing negatively-charged electrons and leaving the positively-charged atoms. In electronic devices, this ionization process creates excess charge, which can produce both tran-sient and lasting Ionizing DoseThe most common radiation require-ment in the aerospace design commu-nity is Total Ionizing Dose (TID), also known as total dose. Total-dose effects are caused when electrons and protons create excess charge in the dielectric layers used for insulation in electronic devices. Total-dose effects are cumu-lative and require chronic exposure to numerous radiation events before device degradation becomes obvious.

5 Electronics in a satellite or spacecraft thus accumulate TID damage over time as they operate under continuous levels of radiation . While electrons are mobile in insulators, the holes (positively-charged atoms) must move by breaking bonds and can become trapped in defects. The result of this accumulated positive charge in a device s insulators leads to degradation and/or device failure. The oxide charge buildup affects the current-voltage characteristics of transistors used in semiconductor circuits. Proper opera-tion of a transistor relies on the ability to switch it from a low-conductance (off) state to a high-conductance (on) state as the gate voltage passes through a threshold.

6 Extended expo-sure to TID radiation can shift the threshold voltages, making transistors easier or harder to switch. radiation may also increase the leakage current, causing the on and off states of the transistors to become less distinguish-able. Either effect can ultimately cause circuit failure. For our Space Products , these effects have been characterized and summarized in our TID radiation Reports at EffectsThe second and perhaps the most critical radiation effect to consider is Single-Event Effects (SEEs). SEEs actually include multiple different failure modes; the one commonality is that all of the failure modes are created by the passage of a single ionizing particle (single-event).

7 SEE failures in digital and analog devices are usually soft, meaning that the data or node voltage is affected but the device is not perma-nently damaged. These failures include the Single-Event Transient (SET), the Single-Event Upset (SEU), the Single-Event Functional Interrupt (SEFI), and possibly the Single-Event Latch-up (SEL), which may be destructive. Power devices are dominated by hard failure modes such as the Single-Event Burn-Out (SEB) and Single-Event Gate Rupture (SEGR), but can also suffer from soft mechanism like SET in the output or a SEFI in the PGOOD signal. The functional failures caused by SEE are evaluated in Space devices using the heavy ion beam provided by a cyclotron facility.

8 These effects on our Space Products are captured in our Single-Event Effects radiation reports at and High-Reliability Design ToolsTI s High-Reliability portfolio offers a comprehensive suite of design tools to serve your simulation needs. You canfind support for transient and AC-Spice simulations, solution size estimation and thermal modeling via TI s WEBENCH simulation tools, and dgital I/O support via IBIS models. Our Spice models are thoroughly correlated to our Cadence design database, laboratory test benches, and mathematical represen-tations. A variety of sources are also used for IBIS model creation. These range from simulation tools in the IC design flow to third-party empirical testing.

9 Ceramic package parasitics are extracted and included in the IBIS information at | TI Space Products Guide 2017 texas InstrumentsRadiation Hardened Power ManagementFeatured Products3-A, Sink/Source DDR Termination Regulator with Built-In VTTREF Buffer TPS7H3301-SPKey Features Control input voltage: and V VLDO input down to V Enable input and power good output 10-mA buffered VTTREF Source/sink VTT voltage output with droop compensation Thermally enhanced 16-pin CFP (HKR) packageRadiation Performance Total Dose (TID) tolerance = 100 krad RHA SEL, SEB and SEGR immune to LET = 65 MeV-cm2/mg SEU immune to LET = 65 MeV-cm2/mgApplications Space payload processing and data storage DDR, DDR2, DDR3, LPDDR3, and DDR4 VTT memory termination and VREF bufferBenefits RHA qualified and orderable as SMD.

10 5962R1422801 VXC meets DDR, DDR2, DDR3, LPDDR3 and DDR4 JEDEC specifications Smaller size than competing discrete solutions enabling very small form factor designs Outstanding SEE performance, VTT-VTTREF < 5 mV (JESD8-9B standard is VTT-VTTREF < 40 mV) Very low R JC = C/W EAR993- to , 6-A, Monolithic Point-of-Load DC/DC Converter TPS50601-SPKey Features PVIN = V to V 6-A maximum output current Min output voltage to V Integrated 55-m high-side and 50-m low-side power FETs Adjustable frequency from 100 kHz to MHz Parallel operation 180 out of with Sync pin Patented dynamic bias functionality included Integrated tracking function R JC = C/W Packaged in thermally enhanced 20-pin ceramic flatpack (HKH) and known good die (KGD) radiation Performance TID = 100 krad RHA SEL, SEGR, SEB immune to LET = 85 MeV-cm2/mg SET/SEFI onset 40 MeV-cm2/mgApplications Satellite point-of-load (POL)