TI Space Products (Rev. E)

1 TI Space ProductsInnovating your Space solution with leading-edge RHA and QMLV QMLC lass V QualifiedRadiation HardnessAssured per MIL-STD-883 Method 1019 Single Event EffectsCharacterized2 | TI Space Products guide 2017 texas InstrumentsSpace Products GuideOverview/Table of ContentsTI Space ProductsTexas instruments offers the most comprehensive selection of leading-edge radiation hardness assured (RHA) and QMLV Products for Space flight. With a proven legacy of 55+ years in the Space market and supporting countless Space programs both domestically and internationally, TI is a trusted partner. We focus on radiation performance and best-in-class SWaP (Size, Weight, and Power) to enable leading-edge designs.

2 The breadth of TI s Space portfolio provides a full signal-chain solution. The portfolio includes the smallest RHA point-of-load power solutions, fast discrete SerDes, and some of the world s highest performance data s Space Products include MIL-PRF-38535 QML Class V and RHA components. These devices are typically supported with Total Ionizing Dose (TID) and Single Event Effects (SEE) test reports to address poten-tial product degradation in a Space environment. The test results for these devices are available at Applications Satellite bus/platform General payload Communications payload Imaging payload Data processing and storage (solid-state recorder) Telemetry sensors Inertial navigation (IMU/INS)

3 Manned vehicles Launch vehicles Power generation and distribution Health monitoring Analog OutputDigital OutputTable of contentsIntroduction 2 Radiation Testing and Design Resources 3 Featured ProductsRadiation Hardened Power Management 4 Radiation Hardened Interface 6 Radiation Hardened Data Converters 8 Radiation Hardened Amplifiers 10 Radiation Hardened Clock and Timing 12TI Worldwide Technical Support 12 DSP SerDes PWM Controller Power FET Clocking Space Logic Point-of- Load Power Memory Low-Speed ADC MUX FPGA High- Speed ADC High- Speed DAC High-SpeedOp Amp High-SpeedOp Amp High-SpeedOp Amp TI Space Products PortfolioTI offers RHA and radiation-tolerant, hermetically packaged components high-lighted in each of the red blocks a complete list of TI s Space Products , see view this guide online, visit instruments TI Space Products guide 2017 | 3 Radiation Testing and Design ResourcesRadiation Testing Radiation in Space High-energy protons, electrons and heavy ions are present in the natural Space environment that can adversely affect the operation of semiconduc-tors used in Space applications.

4 In Space , these particles generally have so much energy that they easily ionize atoms, freeing negatively-charged electrons and leaving the positively-charged atoms. In electronic devices, this ionization process creates excess charge, which can produce both tran-sient and lasting Ionizing DoseThe most common radiation require-ment in the aerospace design commu-nity is Total Ionizing Dose (TID), also known as total dose. Total-dose effects are caused when electrons and protons create excess charge in the dielectric layers used for insulation in electronic devices. Total-dose effects are cumu-lative and require chronic exposure to numerous radiation events before device degradation becomes obvious.

5 Electronics in a satellite or spacecraft thus accumulate TID damage over time as they operate under continuous levels of radiation. While electrons are mobile in insulators, the holes (positively-charged atoms) must move by breaking bonds and can become trapped in defects. The result of this accumulated positive charge in a device s insulators leads to degradation and/or device failure. The oxide charge buildup affects the current-voltage characteristics of transistors used in semiconductor circuits. Proper opera-tion of a transistor relies on the ability to switch it from a low-conductance (off) state to a high-conductance (on) state as the gate voltage passes through a threshold. Extended expo-sure to TID radiation can shift the threshold voltages, making transistors easier or harder to switch.

6 Radiation may also increase the leakage current, causing the on and off states of the transistors to become less distinguish-able. Either effect can ultimately cause circuit failure. For our Space Products , these effects have been characterized and summarized in our TID Radiation Reports at EffectsThe second and perhaps the most critical radiation effect to consider is Single-Event Effects (SEEs). SEEs actually include multiple different failure modes; the one commonality is that all of the failure modes are created by the passage of a single ionizing particle (single-event). SEE failures in digital and analog devices are usually soft, meaning that the data or node voltage is affected but the device is not perma-nently damaged.

7 These failures include the Single-Event Transient (SET), the Single-Event Upset (SEU), the Single-Event Functional Interrupt (SEFI), and possibly the Single-Event Latch-up (SEL), which may be destructive. Power devices are dominated by hard failure modes such as the Single-Event Burn-Out (SEB) and Single-Event Gate Rupture (SEGR), but can also suffer from soft mechanism like SET in the output or a SEFI in the PGOOD signal. The functional failures caused by SEE are evaluated in Space devices using the heavy ion beam provided by a cyclotron facility. These effects on our Space Products are captured in our Single-Event Effects radiation reports at and High-Reliability Design ToolsTI s High-Reliability portfolio offers a comprehensive suite of design tools to serve your simulation needs.

8 You canfind support for transient and AC-Spice simulations, solution size estimation and thermal modeling via TI s WEBENCH simulation tools, and dgital I/O support via IBIS models. Our Spice models are thoroughly correlated to our Cadence design database, laboratory test benches, and mathematical represen-tations. A variety of sources are also used for IBIS model creation. These range from simulation tools in the IC design flow to third-party empirical testing. Ceramic package parasitics are extracted and included in the IBIS information at | TI Space Products guide 2017 texas InstrumentsRadiation Hardened Power ManagementFeatured Products3-A, Sink/Source DDR Termination Regulator with Built-In VTTREF Buffer TPS7H3301-SPKey Features Control input voltage.

9 And V VLDO input down to V Enable input and power good output 10-mA buffered VTTREF Source/sink VTT voltage output with droop compensation Thermally enhanced 16-pin CFP (HKR) packageRadiation Performance Total Dose (TID) tolerance = 100 krad RHA SEL, SEB and SEGR immune to LET = 65 MeV-cm2/mg SEU immune to LET = 65 MeV-cm2/mgApplications Space payload processing and data storage DDR, DDR2, DDR3, LPDDR3, and DDR4 VTT memory termination and VREF bufferBenefits RHA qualified and orderable as SMD: 5962R1422801 VXC meets DDR, DDR2, DDR3, LPDDR3 and DDR4 JEDEC specifications Smaller size than competing discrete solutions enabling very small form factor designs Outstanding SEE performance, VTT-VTTREF < 5 mV (JESD8-9B standard is VTT-VTTREF < 40 mV)

10 Very low R JC = C/W EAR993- to , 6-A, Monolithic Point-of-Load DC/DC Converter TPS50601-SPKey Features PVIN = V to V 6-A maximum output current Min output voltage to V Integrated 55-m high-side and 50-m low-side power FETs Adjustable frequency from 100 kHz to MHz Parallel operation 180 out of with Sync pin Patented dynamic bias functionality included Integrated tracking function R JC = C/W Packaged in thermally enhanced 20-pin ceramic flatpack (HKH) and known good die (KGD)Radiation Performance TID = 100 krad RHA SEL, SEGR, SEB immune to LET = 85 MeV-cm2/mg SET/SEFI onset 40 MeV-cm2/mgApplications Satellite point-of-load (POL) power suppliesBenefits RHA qualified and orderable as SMD.