TPD4E002 Quad Low-Capacitance Array With +/ …

1 TPD4E002 InterfaceProtected ICIO1IO2IO3IO4IO1IO2IO3IO4IO1IO2IO3IO4 GNDP roductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JULY2006 REVISEDDECEMBER2016 TPD4E002 quad Low-CapacitanceArray with 15-kV ESD Protection11 Features1 IEC 61000-4-2 ESDP rotection 15-kVIEC 61000-4-2 ContactDischarge IEC 61000-4-5 SurgeProtection (8/20- s Pulse) ANSI/ESDA/JEDECJS-001 15-kVHumanBodyModel(HBM) FourUnidirectionalVoltageSuppressionDiod esfor use in ESDP rotection I/O BreakdownVoltage,VBR= V (Minimum) I/O Capacitance11 pF (Typical) Low LeakageCurrent< 100 nA VerySmallPrinted-CircuitBoard(PCB)Area< mm2 HighIntegration Suitablefor High-DensityBoards2 Applications Computers Printers CommunicationSystemsand CellularPhones VideoEquipment3 DescriptionTheTPD4E002deviceis a transientvoltagesuppressor(TVS)designedt o protectup to four linesagainstelectrostaticdischarge(ESD) idealfor applicationswherebothreducedlinecapacita nceandboardspace-savingare (1)PARTNUMBERPACKAGEBODYSIZE(NOM)TPD4E00 2 SOT(5) (1) For all availablepackages,see the orderableaddendumatthe end of the JULY2006.

2 TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand IEC Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryNOTE:Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (February2016)to RevisionFPage (July2010)to RevisionEPage AddedESDR atingstable,FeatureDescriptionsection,De viceFunctionalModes,ApplicationandImplem entationsection,PowerSupplyRecommendatio nssection,Layoutsection,DeviceandDocumen tationSupportsection,andMechanical,Packa ging, POAat the end of the JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated5 Pin Configurationand FunctionsDRLP ackage5-PinSOTTop ViewPin Ground3I/O2I/OESD protectionchannel4I/O3I/OESD protectionchannel5I/O4I/OESD protectionchannel4 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated(1)Stre ssesbeyondthoselistedunderAbsoluteMaximu mRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions.

3 Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay (unlessotherwisenoted)(1)MINMAXUNITTJJ unctiontemperature125 CTopOperatingtemperature 40125 CTstgStoragetemperature 55150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a JEDECS pecificationVALUEUNITV(ESD)Electrostatic dischargeIEC 61000-4-2contactdischarge 15000 VHuman-bodymodel(HBM),per ANSI/ESDA/JEDECJS-001(1)Charged-devicemo del(CDM),per JEDEC specificationJESD22-C101(2) IEC SpecificationVALUEUNITIppPeakpulsecurren tIEC 61000-4-5(tp = 8/20 s) 61000-4-5(tp = 8/20 s) (unlessotherwisenoted)MINMAXUNITVI/OOper atingvoltage05 VOperatingtemperature 40125 C(1)For moreinformationabouttraditionaland new thermalmetrics,see (1) TPD4E002 UNITDRL(SOT)5 PINSR JAJunction-to-ambientthermalresistance22 0 C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/WR JC(bot)Junction-to-case(bottom)

4 Thermalresistancen/a JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated(1)Rdis measuredunderreversebreakdownconditionwi th inrushcurrentin the rangeof 1 A 25 CPARAMETERTESTCONDITIONSMINTYPMAXUNITVBR I/O breakdownvoltageIR= 1 leakagecurrentVRM= 3 A CCI/O capacitanceper line11pFRdDynamicresistance(1)2 I (mA) 500m 0 500m (V)INCapacitance (pF) (Mhz) capacitance (pF) ( C)6 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016, I/O Capacitancevs TemperatureFigure2. I/O Capacitancevs Frequency(TypicalValues)Figure3.

5 DiodeCurrentAcrossI/O Voltage(TypicalValues) JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated7 TPD4E002is a TPD4E002is ratedto dissipatecontactESDstrikesof 15 kV, beyondLevel4 as specifiedin the IEC an11-pFI/O capacitanceper channel,makingit idealfor use in dataI/O interfacesof up to 100 TPD4E002is a TVSthat providesESDprotectionfor up to four channels,withstandingup to 15-kVcontactESDper IEC 61000-4-2and IEC monolithictechnologyyieldsexceptionallys mallvariationsin capacitancebetweenany I/O pin of the smallfootprintis idealfor applicationswherespace-savingdesignsare TPD4E002deviceis a passiveintegratedcircuitthat triggerswhenvoltagesare aboveVBRor belowthediodesVFof approximately V.

6 DuringESDevents,voltagesas high as 15-kVcontactESDcan be directedto groundthroughthe voltageson the protectedline fall belowthe triggerlevelsofTPD4E002(usuallywithinten s of nanoseconds)the devicerevertsto its ICIO1IO2IO3IO4IO1IO2IO3IO4IO1IO2IO3IO4 GND8 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated8 Applicationand ImplementationNOTEI nformationin the followingapplicationssectionsis not partof the TI componentspecification,and TI doesnot warrantits accuracyor s customersareresponsiblefor determiningsuitabilityof componentsfor test theirdesignimplementationto TPD4E002deviceis a TVSdiodearraytypicallyusedto providea pathto groundfor dissipatingESDeventson high-speedsignallinesbetweena humaninterfaceconnectorand a the currentfromESDpassesthroughthe TVS,onlya smallvoltagedropis presentacrossthe the voltagepresentedto theprotectedintegratedcircuit(IC).

7 The triggeredTVSholdsthis voltage,VCLAMP, to a safe levelfor the a typicaldesignexample,one TPD4E002deviceis beingusedto protectan IC againstpotentialESDfromafour-channelhuma ninterfaceport,as shownin TypicalApplicationfor lists the parametersfor this DesignParametersDESIGNPARAMETERVALUES ignal'svoltagerangeon I/O1,I/O2,I/O3,and I/O40 V to 5 VOperatingfrequency< 100 beginthe designprocess,someparametersmustbe decidedupon;the designermustknowthe following: Voltagerangeof the signalon all protectedlines Operatingfrequencyon all I/O1 ThroughI/O2 The TPD4E002devicehas 4 identicalprotectionchannelsfor symmetryof the deviceprovidesflexibilitywhenselectingwh ichof the four I/O channelswill I/O supportsa signalrangeof 0 V to 5 V and up to 100 (20 V/div)Time (50 ns/div) ( s) IPP (A)051015202530 PPP (W)Power (W)Current (A) JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016, ESDC lampVoltageat I/O Pins:IEC6100-4-215-kVContactDischargeFig ure6.

8 PulseWaveform(8/20- s Pulse)9 PowerSupplyRecommendationsThe TPD4E002is a passiveESDprotectiondeviceand thereis no needto powerit. Do not violatethe maximumvoltagespecificationsfor to GNDL egendVIA to Internal GND PlaneTop Layer GND Plane10 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated10 The optimumplacementis as closeto the connectoras possible. EMIduringan ESDeventcan couplefromthe tracebeingstruckto othernearbyunprotectedtraces,resultingin earlysystemfailures. The PCBdesignermustminimizethe possibilityof EMI couplingby keepingany unprotectedtracesawayfromthe protectedtraces,whichare betweenthe TVSand the connector.

9 Routethe protectedtracesas straightas possible. Eliminateany sharpcornerson the protectedtracesbetweenthe TVSand the connectorby usingroundedcornerswith the largestradii possible. Electricfieldstendto buildup on corners,increasingEMI closeto the GNDpin ofTPD4E002as allowsfor a low impedancepathto groundso that the devicecan properlydissipatean JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated11 Deviceand relateddocumentationsee the following: ReadingandUnderstandinganESDP rotectionDatasheet DocumentationUpdatesTo receivenotificationof documentationupdates,navigateto the deviceproductfolderon In the upperrightcorner,clickonAlertmeto registerand receivea weeklydigestof any productinformationthat changedetails,reviewthe revisionhistoryincludedin any followinglinksconnectto TI provided"AS IS" by the not constituteTI specificationsand do not necessarilyreflectTI's views.

10 See TI's E2E OnlineCommunityTI's Engineer-to-Engineer(E2E) ,you can ask questions,shareknowledge,exploreideasand helpsolveproblemswith 's DesignSupportQuicklyfind helpfulE2E forumsalongwith designsupporttoolsandcontactinformationf or is a trademarkof othertrademarksare the propertyof leadsshouldbe shortedtogetheror the deviceplacedin conductivefoamduringstorageor handlingto preventelectrostaticdamageto the glossarylists and explainsterms,acronyms,and Mechanical,Packaging,and OrderableInformationThe followingpagesincludemechanical,packagin g,and the mostcurrentdataavailablefor the subjectto changewithoutnoticeand revisionofthis browser-basedversionsof this datasheet.