TS3A5017 Dual SP4T Analog Switch / Multiplexer …

1 S2DS3S4S1IN1IN2 ENProductFolderOrderNowTechnicalDocument sTools &SoftwareSupport &CommunityAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JANUARY2005 REVISEDJANUARY2019TS3A5017 dual SP4T AnalogSwitch/ Multiplexer / Demultiplexer11 Features1 Isolationin the Powered-DownMode,V+= 0 Low ON-StateResistance Low ChargeInjection ExcellentON-StateResistanceMatching Low TotalHarmonicDistortion(THD) Latch-UpPerformanceExceeds100 mA PerJESD78, ClassII ESDP erformanceTestedPer JESD22 1500-VHuman-BodyModel(A114-B,ClassII) 1000-VCharged-DeviceModel(C101)2 Applications Sample-and-HoldCircuits Battery-PoweredEquipment Audioand VideoSignalRouting CommunicationCircuits3 DescriptionTheTS3A5017deviceis a dualsingle-polequadruple-throw(4:1)analo gswitchthat is designedto V to V. Thisdevicecanhandlebothdigitaland analogsignals,and signalsupto V+can be transmittedin (1)PARTNUMBERPACKAGEBODYSIZE(NOM)TS3A501 7 SOIC(16) (16) (16) (16) (16) (16) (1) For all availablepackages,see the orderableaddendumatthe end of the JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryChangesfromRevisionF (October2018)to RevisionGPage ChangedFeatureFrom:2000-VHuman-BodyModel To: Changedthe HBMvalueFrom: 2000V To: 1500V in (April2015)to RevisionFPage Changedthe XTALKMAX valueFrom.

2 49 dB To 69 dB in theElectricalCharacteristicsfor (December2008)to RevisionEPage AddedApplications,DeviceInformationtable ,Pin Functionstable,ESDR atingstable,ThermalInformationtable,Typi calCharacteristics,FeatureDescriptionsec tion,DeviceFunctionalModes,Applicationan d Implementationsection,PowerSupplyRecomme ndationssection,Layoutsection,Deviceand DocumentationSupportsection,andMechanica l,Packaging,and +IN22 ENIN12S42S32S21D2S1 GND2D116215314413512611710891 ENV+116 ExposedCenterPad23456IN21S41S31S21S11D2 ENIN12S42S32S22S17 GND2D891514131211101 LogicControlLogicControl1621531441351261 17101 ENIN21S41S31S21S11 DGNDV+ JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporated5 Pin Configurationand FunctionsD, DBQ,DGV,and PW Package16-PinSOIC,SSOP,TVSOPand TSSOP(TopView)RGYP ackage16-PinVQFN(TopView)If exposedcenterpad is used,it mustbeconnectedas a secondarygroundor (TopView)Pin FunctionsPINTYPEDESCRIPTIONNAMESOIC,SSOP ,TVSOP,TSSOP, switch11EN115 IActive-lowenablefor switch11S164I/OSwitch1 channel11S253I/OSwitch1 channel21S342I/OSwitch1 channel31S431I/OSwitch1 channel42D97I/OCommonpathfor switch22EN1513 IActive-lowenablefor switch22S1108I/OSwitch2 channel12S2119I/OSwitch2 channel22S31210I/OSwitch2 channel32S41311I/OSwitch2 channel4 GND86 GroundIN11412 ISwitch1 inputselectIN2216 ISwitch2 inputselectV+1614 Supplyvoltage4TS3A5017 SCDS188G JANUARY2005.

3 TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporated(1)Stre ssesbeyondthoselistedunderAbsoluteMaximu mRatingsmay causepermanentdamageto the stressratingsonly,and functionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditionsis not absolute-maximum-ratedconditionsfor extendedperiodsmay affectdevicereliability.(2)The algebraicconvention,wherebythe mostnegativevalueis a minimumand the mostpositivevalueis a maximum.(3)All voltagesare with respectto ground,unlessotherwisespecified.(4)The inputand outputvoltageratingsmay be exceededif the inputand outputclamp-currentratingsare (unlessotherwisenoted)(1)(2)MINMAXUNITV+ Supplyvoltage(3) , VDAnalogvoltage(3)(4) ,IDKA nalogport clampcurrentVS, VD< 0 50mAIS, IDON-stateswitchcurrentVS, VD= 0 to 7 V 128128mAVID igitalinputvoltage (3)(4)VI< 0 50mAI+ContinuouscurrentthroughV+100mAIGN DC ontinuouscurrentthroughGND 100mATstgStoragetemperature 65150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.

4 (2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (ESD)ElectrostaticdischargeHuman-bodymod el(HBM),per ANSI/ESDA/JEDECJS-001(1) 1500 VCharged-devicemodel(CDM),per JEDEC specificationJESD22-C101(2) (unlessotherwisenoted)MINMAXUNITVI/ + 4085 C(1)For moreinformationabouttraditionaland new thermalmetrics,see theIC PackageThermalMetricsapplicationreport, (1)TS3A5018 UNITD (SOIC)DBQ(SSOP)DGV(TVSOP)PW(TSSOP)RGY(VQ FN)RSV(UQFN)16 PINS16 PINS16 PINS16 PINS16 PINS16 PINSR JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporated(1)The algebraicconvention,wherebythe mostnegativevalueis a minimumand the mostpositivevalueis a maximum(2)All unuseddigitalinputsof the devicemustbe held at V+or GNDto the TI applicationreport,Implicationsof Slowor FloatingCMOSI nputs, += V to V, TA= 40 C to 85 C (unlessotherwisenoted)(1)PARAMETERTESTCO NDITIONSTAV+MINTYPMAXUNITA nalogSwitchVD, VSAnalogsignalrange0V+VronON-stateresist ance0 VS V+,ID= 32 mA,SwitchON,see Figure1225 C3 V1112 Full14 ronON-stateresistancematchbetweenchannel sVS= V,ID= 32 mA,SwitchON,see Figure1225 C3 V12 Full3ron(flat)ON-stateresistanceflatness 0 VS V+,ID= 32 mA,SwitchON,see Figure1225 C3 V79 Full10IS(OFF)SOFF leakagecurrentVS= 1 V, VD= 3 V,orVS= 3 V, VD= 1 V,SwitchOFF,see Figure1325 V AFull (OFF)VS= 0 to V,VD= V to 0,25 C0 V 55ID(OFF)DOFF leakagecurrentVS= 1 V, VD= 3 V,orVS= 3 V, VD= 1 V,SwitchOFF,see Figure1325 V AFull (OFF)

5 VD= 0 to V,VS= V to 0,25 C0 V 55IS(ON)SON leakagecurrentVS= 1 V, VD= Open,orVS= 3 V, VD= Open,SwitchON,see Figure1425 V AFull (ON)DON leakagecurrentVD= 1 V, VS= Open,orVD= 3 V, VS= Open,SwitchON,see Figure1425 V AFull (IN1,IN2, EN)(2)VIHI nputlogichighFull2V+ , IILI nputleakagecurrentVI= V+or 025 V AFull 11 QCChargeinjectionVGEN= 0, RGEN= 0,CL= nF,See Figure2125 V5pCCS(OFF)SOFF capacitanceVS= V+or GND,SwitchOFF,See Figure1525 (OFF)DOFF capacitanceVD= V+or GND,SwitchOFF,See Figure1525 V19pFCS(ON)SON capacitanceVS= V+or GND,SwitchON,See Figure1525 V25pFCD(ON)DON capacitanceVD= V+or GND,SwitchON,See Figure1525 V25pFCID igitalinputcapacitanceVI= V+or GND,See Figure1525 V2pFBWB andwidthRL= 50 ,SwitchON,See Figure1725 V165 MHzOISOOFF isolationRL= 50 ,f = 1 MHz,See Figure1825 V 69dB6TS3A5017 SCDS188G JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedElectri calCharacteristicsfor (continued)V+= V to V, TA= 40 C to 85 C (unlessotherwisenoted)(1)PARAMETERTESTCO NDITIONSTAV+MINTYPMAXUNITXTALKC rosstalkRL= 50 ,f = 1 MHz,See Figure1925 V -69dBXTALK(ADJ)CrosstalkadjacentRL= 50 ,f = 1 MHz,See Figure2025 V 74dBTHDT otalharmonicdistortionRL= 600 ,CL= 50 pF,f = 20 Hz to 20 kHz,see Figure2225 +PositivesupplycurrentVI= V+or GND,SwitchON or OFF25 AFull10(1)The algebraicconvention,wherebythe mostnegativevalueis a minimumand the mostpositivevalueis a maximum(2)All unuseddigitalinputsof the devicemustbe held at V+or GNDto the TI applicationreport,Implicationsof Slowor FloatingCMOSI nputs, += V to V, TA= 40 C to 85 C (unlessotherwisenoted)(1)

6 PARAMETERTESTCONDITIONSTAV+MINTYPMAXUNIT A nalogSwitchVD, VSAnalogsignalrange0V+VronON-stateresist ance0 VS V+,ID= 24 mA,SwitchON,see Figure1225 Full24 ronON-stateresistancematchbetweenchannel sVS= V,ID= 24 mA,SwitchON,see Figure1225 V12 Full3ron(flat)ON-stateresistanceflatness 0 VS V+,ID= 24 mA,SwitchON,see Figure1225 V1618 Full20IS(OFF)SOFF leakagecurrentVS= V, VD= V,orVS= V, VD= V,SwitchOFF,see Figure1325 V AFull (OFF)VS= 0 to V,VD= V to 0,25 C0 V 55ID(OFF)DOFF leakagecurrentVS= V, VD= V,orVS= V, VD= ,SwitchOFF,see Figure1325 V AFull (OFF)VD= 0 to V,VS= V to 0,25 C0 V 55IS(ON)SON leakagecurrentVS= V, VD= Open,orVS= V, VD= Open,SwitchON,see Figure1425 V AFull (ON)DON leakagecurrentVD= V, VS= Open,orVD= V, VS= Open,SwitchON,see Figure1425 V AFull (IN1,IN2, EN)(2) + , IILI nputleakagecurrentVI= V+or 025 V AFull 11 QCChargeinjectionVGEN= 0, RGEN= 0,CL= nF,See Figure2125 VpCCS(OFF)SOFF capacitanceVS= V+or GND,SwitchOFF,See Figure1525 JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks.

7 TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedElectri calCharacteristicsfor (continued)V+= V to V, TA= 40 C to 85 C (unlessotherwisenoted)(1)PARAMETERTESTCO NDITIONSTAV+MINTYPMAXUNITCD(OFF)DOFF capacitanceVD= V+or GND,SwitchOFF,See Figure1525 (ON)SON capacitanceVS= V+or GND,SwitchON,See Figure1525 V24pFCD(ON)DON capacitanceVD= V+or GND,SwitchON,See Figure1525 V24pFCID igitalinputcapacitanceVI= V+or GND,See Figure1525 V2pFBWB andwidthRL= 50 ,SwitchON,See Figure1725 V165 MHzOISOOFF isolationRL= 50 ,f = 1 MHz,See Figure1825 V 69dBXTALKC rosstalkRL= 50 ,f = 1 MHz,See Figure1925 V 69dBXTALK(ADJ)CrosstalkadjacentRL= 50 ,f = 1 MHz,See Figure2025 V 74dBTHDT otalharmonicdistortionRL= 600 ,CL= 50 pF,f = 20 Hz to 20 kHz,see Figure2225 +PositivesupplycurrentVI= V+or GND,SwitchON or OFF25 (unlessotherwisenoted)PARAMETERTESTCONDI TIONSTAV+MINTYPMAXUNITtONTurnontimeVD= 2 V,RL= 300 ,CL= 35 pF,see Figure1625 V V,RL= 300 ,CL= 35 pF,see Figure1625 V (unlessotherwisenoted)PARAMETERTESTCONDI TIONSTAV+MINTYPMAXUNITtONTurnontimeVCOM= 2 V,RL= 300 ,CL= 35 pF,see Figure1625 V V110tOFFT urnofftimeVCOM=2 V,RL= 300 ,CL= 35 pF,see Figure1625 V Injection (pC)V(V)COMV = V+V = V+ /ONt (nsOFF)6745892301V (V)+ Current (nA)ICOM(ON)INC(ON)INC(OFF)INO(ON)INO(OF F)ICOM(OFF)4010 40258530200T ( C) C25 C 40 CVCOM(V)r (ON )r(ON )V(V)COMT = 25 CAV = V+V = V+ C25 C C40r (ON )V(V)COM8TS3A5017 SCDS188G JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019, ronvs VCOMF igure2.

8 Ronvs VCOM(V+= V)Figure3. ronvs VCOM(V+= V)Figure4. LeakageCurrentvs Temperature(V+= V)Figure5. ChargeInjection(QC) vs VCOMF igure6. tONand tOFFvs SupplyVoltage( C) ( )ATHD (%) (Hz)10 K100 (V)+ Threshold (nA) JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedTypical Characteristics(continued)Figure7. Logic-LevelThresholdvs V+Figure8. Bandwidth(Gainvs Frequency)(V+= V)Figure9. OFFI solationand Crosstalkvs Frequency(V+= V)Figure10. TotalHarmonicDistortionvs FrequencyFigure11. Power-SupplyCurrentvs Temperature(V+= V)ON-State Leakage CurrentChannel ONV = Vor VIIHILOFF-State Leakage CurrentChannel OFFV = Vor VVor V= 0 to VandV = V to 0 IIHILD+S1S2-S4+Channel ONVVV = VDS2-S4 IIHor VIor Vs1 DIL r=on10TS3A5017 SCDS188G JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporated7 ParameterMeasurementInformationFigure12.

9 ON-StateResistance(ron)Figure13. OFF-StateLeakageCurrent(ID(OFF), IS(OFF))Figure14. ON-StateLeakageCurrent(ID(ON), IS(ON))Network Analyzer SetupSource Power = 0 dBm(632-mV P-P at 50- load)DC Bias = 350 mV Channel ON: S to DV = V or GND1I+50 50 (A)(C)(B)(B)tOFFV+0300 300 35 pF35 pFCLV= V to GNDBIAS+V = Vor VCapacitance is measured at S1,S2-S4, D, and IN inputs duringON and OFF JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedParamet erMeasurementInformation(continued)Figur e15. Capacitance(CI, CD(OFF), CD(ON), CS(OFF), CS(ON)) :PRR 10 MHz,ZO= 50 , tr< 5 ns, tf< 5 jig ElectricalCharacteristicsfor Turnon(tON) and TurnoffTime(tOFF)Figure17. Bandwidth(BW)Network Analyzer SetupSource Power = 0 dBm(632-mV P-P at 50- load)DC Bias = 350 mV Channel ON: S to D150 50 50 V2SV1S2S11S11D2 DNetwork Analyzer SetupSource Power = 0 dBm(632-mV P-P at 50- load)DC Bias = 350 mV Channel ON: S to DV = V or GND1I+Channel OFF: S -S to D2450 50 50 VS2-S4 Network Analyzer SetupSource Power = 0 dBm(632-mV P-P at 50- load)DC Bias = 350 mV Channel OFF: S to DV = V or GNDI+50 50 50 12TS3A5017 SCDS188G JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedParamet erMeasurementInformation(continued)Figur e18.

10 OFFI solation(OISO)Figure19. Crosstalk(XTALK)Figure20. AdjacentCrosstalk(XTALK)10 F10 F(A)600 600 600 V= 0 to VGEN+R= 0C = nFQ = CVV = Vor VGENLCLDIIHILX V JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporatedParamet erMeasurementInformation(continued) :PRR 10 MHz,ZO= 50 , tr< 5 ns, tf< 5 jig ChargeInjection(QC) jig TotalHarmonicDistortion(THD)S2DS3S4S1IN1 IN2EN14TS3A5017 SCDS188G JANUARY2005 : TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019,TexasInstrumentsIncorporated8 TS3A5017is a dualSingle-Pole-4-Throw(SP4T) TS3A5017 ,like all analogswitches,is pin connectsto its four respectiveS pins,with the switchconnectiondependenton the statusof EN, IN2, and IN1. See Table1 for the FunctionalBlockDiagram(EachSwitch) powered-downmodeallowssignalsto be presentat the inputswhilethe switchis poweredoff withoutcausingdamageto the low ON-stateresistanceand low chargeinjectiongive the TS3A5017betterperformanceat JANUARY2005 REVISEDJANUARY2019 ProductFolderLinks: TS3A5017 SubmitDocumentationFeedbackCopyright 2005 2019, FunctionTableENIN2IN1D TO S,S TO DLLLD = S1 LLHD = S2 LHLD = S3 LHHD = S4 HXXOFF C or System Logic VIN1V+ENS3S4To/From System16TS3A5017 SCDS188G JANUARY2005.