UCC24612 High Frequency Synchronous Rectifier …

1 Copyright 2017, texas instruments IncorporatedVDDVGVSVDREGVoutCopyright 2017, texas instruments IncorporatedVDDVGVSVDREGP roductFolderOrderNowTechnicalDocumentsTo ols &SoftwareSupport &CommunityAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand AUGUST2017 REVISEDFEBRUARY2018 UCC24612 High FrequencySynchronousRectifierController1 1 Features1 SupportsTopologiessuchas ActiveClampFlyback,QR, DCM,CCMF lybackand LLC MOSFETVDSS ensingup to 230 V OperatingFrequencyUp to 1 MHz 1 MHzfor UCC24612 -1 800 kHz for UCC24612 -2 WideVDDR angeAllowsfor DirectBiasfrom5-Vto 28-VOutputSystems 4-A Sink.

2 1-A SourceGateDriverwithProportionalGateDriv e AdaptiveMinimumOff-timefor IncreasedNoiseImmunity CycleLimitPre-Turn-offImprovesEfficiency inCCM Highor Low-SideConfigurable AutomaticLight-Loadand Sleep-ModeManagementwith 320- A standbycurrent 16-nsTypicalTurnoffPropagationDelay ReducedDrivingLoss2 Applications AC-to-DCAdapters USBType-Cand PowerDeliveryAC Adapters Serverand TelecomPowerSupply AC-to-DCAuxiliaryPowerSupply3 DescriptionUCC24612is a highperformancesynchronousrectifiercontr ollerand driverfor standardand near-idealdiodeemulationUCC24612reducesl ossesof the outputrectifierandindirectlythe primaryside drainto source(VDS) sensingcontrolschemeallowsUCC24612towork with multipletopologies,suchas ActiveClampFlyback,QR/DCM/CCMF lybackand LLC, designeffort,enablingUCC24612to excelin a varietyof wideoperatingVDDand VD voltagerangesenablesimpleimplementationi n systemswithoutputsup to 28 V.

3 Efficiencyand continuousconductionmode(CCM)is furtherenhancedwithproportionalgate-driv eand CCMcyclelimit fast comparatorwith part of agreatersystemthatmeetsstringentefficien cystandardssuchas Departmentof Energy(DoE)LevelVI and Codeof Conduct(CoC)Tier availablein a (1)PARTNUMBERPACKAGEBODYSIZE(NOM)UCC2461 2 SOT23(5) (1) For all availablepackages,see the orderableaddendumatthe end of the AUGUST2017 2017 2018,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand Applicationand Deviceand Mechanical,Packaging,and DeviceComparisonORDERABLE PARTNUMBERTURNON PROPAGATIONDELAYMINIMUMON TIMEMAXIMUMSWITCHINGFREQUENCYBESTSUITABL ETOPOLOGIESUCC24612-180 ns375 ns1 MHzCCM/DCM/QRFlyback,ActiveClampFlybacku singGaNMOSFETas primary-side switchUCC24612-2170 ns540 ns800 kHzLLC,ActiveClampFlybackusingSi MOSFET asprimary-sideswitch12354 UCC24612 (DBV)VSREGVDVDD(TOP VIEW)

4 AUGUST2017 REVISEDFEBRUARY2018 SubmitDocumentationFeedbackCopyright 2017 2018,TexasInstrumentsIncorporated5 Pin Configurationand Functions5-PinSOT-23 Pin the devicebias pin. An internallinearregulatorfromVDDto REGgeneratesa well is recommendto put a F bypasscapacitorfromREGpin to VS pin to SR MOSFET drainpin. The layoutshouldavoidsharingthe VD pin tracewith the powerpathto minimizethe impactof pin to the outputvoltagewhenin R-C-Dcircuitor othercircuitsto generatebias voltagefromSR MOSFET drainwhenusinghigh-sideSR configuration,referringto PowerSupplyRecommendationsfor (controlledMOSFET gatedrive)

5 ,connectVG to the gateof the controlledMOSFET throughasmallseriesresistorusingshortPC boardtracksto VGoutputcan achieve>1-A peaksourcecurrentwhenHighand >4-A peaksink currentwhenLow whenconnectedto a to the weakinternalpull up afterinitialfast turnon, avoidputtinga resistorless than50 k betweenVG to VS .VS2-VS is the internalgroundreferenceof the is also usedto sensethe voltagedropacrossthe SR layoutshouldavoidsharingthe VS pin tracewith the powerpathto minimizethe impactof parasiticinductance.(1)Stressesbeyondtho selistedunderAbsoluteMaximumRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions.

6 Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay affectdevicereliability.(2)Inputvoltages morenegativethanindicatedmay existon any listedpin withoutexcessstressor damageto the deviceif the pin s inputcurrentmagnitudeis limitedto less than-10mA.(3)In normaluse, VG is connectedto the gateof a powerMOSFET througha way,VG currentis limitedbythe UCC24612and no absolutemaximumoutputcurrentconsideratio nsare seriesresistorshallbe selectedto minimizeovershootand ringingdue to seriesinductanceof the VG outputand currentis subjectto the (unlessotherwisenoted)(1)MINMAXUNITI nputvoltage(2)VDD for IVD 10 mA ,peakVG(3)pulsed,tPULSE 4 ms, duty cycle 1% 4 ATJO peratingjunctiontemperature 40125 CTstgStoragetemperature 65150 C4 UCC24612 SLUSCM5A AUGUST2017 2017 2018,TexasInstrumentsIncorporated(1)

7 JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (ESD)ElectrostaticdischargeHumanbodymode l(HBM),per ANSI/ESDA/JEDECJS-001,all pins,exceptpin 5(1) 2,000 VHumanbodymodel(HBM),per ANSI/ESDA/JEDECJS-001,pin 5(1) 1,500 VChargeddevicemodel(CDM),per JEDEC specificationJESD22-C101,all pins(2) AUGUST2017 REVISEDFEBRUARY2018 SubmitDocumentationFeedbackCopyright 2017 2018, (unlessotherwisenoted)MINNOMMAXUNITVVDDV DD inputvoltage428 VCVDDVDD bypasscapacitor1 FTJJ unctiontemperature 40125 CfS_MAXM aximumswitchingfrequencyUCC24612-1770100 0kHzMaximumswitchingfrequencyUCC24612-26 25800(1)For moreinformationabouttraditionaland new thermalmetrics,see thetheSemiconductorandICPackageThermalMe tricsapplicationreport, (1) UCC24612 UNITDBV(SOT23-5)5 PINsR C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/W6 UCC24612 SLUSCM5A AUGUST2017 2017 2018,TexasInstrumentsIncorporated(1)

8 Specifiedby VDD= 12 VDC, CVG= 0 pF, CREG= F, 40 C TJ= TA +125 C, all voltagesare with respectto VS, and currentsarepositiveinto and negativeout of the specifiedterminal, at TJ= +25 ,REGundervoltageVDD= 4 V, VD = 0 V50105150 AIVDDRUNVDD current,runVDD= 12 5 ,standbymodeVDD= 12 V, VD = 1 V200390650 AVDD= 5 V, VD = 1 V200320500 AUNDERVOLTAGELOCKOUT(UVLO)VREGONREG turn-onthresholdTurn-ondetectedby VREGON turn-onthresholdVD falling,TJ= 25 C 300 240 175mVVTHVGOFFVG turn-offthresholdVD rising,TJ= 25 C 20-9 2mVVD rising, 40 C TJ 125 C 30 9 2 VTHARMVG re-armingthresholdVD pin bias currentwhenVG ishigh (SR is on)VVD= 50 mV, VVG= VGH 101 AIVDBIAS_OFFVD pin bias currentwhenVG islow (SR is off)

9 VVD= 150 mV, VVG= VGL, TJ=25 C 6 2 AVVD= 150 mV, VVG= VGL, 40 C TJ 125 C 10 IVDLKVD pin leakagecurrentVVD= 200 AGATEDRIVERRSOURCEVG pull-upresistanceIVG= 20 RSINKVG pull-downresistanceIVG= 100 VGHVG outputlow voltageIVG= 100 mA, VDD= 12 V60150mVVOLGUVVG outputlow voltagein UVLOIVG= 25 mA, VDD= 4 (1)AIVGPDG atedrivermaximumsink current(1)4 AREGSUPPLYVREGREGpin regulationlevelILOAD_REG= 0 REGILOAD_REG= 10 mA to 0 pass-throughmodeVDD= 5 V, ILOAD_REG= 10 0 8 AUGUST2017 REVISEDFEBRUARY2018 SubmitDocumentationFeedbackCopyright 2017 2018,TexasInstrumentsIncorporated(1)Spec ifiedby VDD= 12 VDC, CVG= 0 pF, CREG= F, 40 C TJ= TA +125 C, all voltagesare with respectto VS, and currentsarepositiveinto and negativeout of the specifiedterminal, at TJ= +25 V to Vin 5 ns, UCC24612 -1,TJ= 25 C,see curvefor moreinformation4080120nsVD V to Vin 5 ns, UCC24612 -2,TJ= 25 C,see curvefor moreinformation120170225tdVGOFFG ateturn-offpropagationdelayVD V to V in 5ns1635nsMINIMUMON-TIMEtON(min)

10 MinimumSR conductiontimeUCC24612-1245375475nsUCC24 612-2350540670nsAdaptiveMINIMUMOFF-TIMEt OFF_ABSMINA bsoluteminimumSR off-timeUCC24612-1200400595nsUCC24612-21 60360545tOFF_MAXM aximumSR sGATEDRIVERtr_VGVG rise time10%to 90%,CVG= nF103265nstf_VGVG fall time,90%to 10%,CVG= nF51635nsLIGHTLOAD/ ofstandbymode101520kHzfSTB_HYSA veragefrequencyhysteresisforstandbymode2 34kHzPROTECTIONTTSDT hermalshut-downthreshold130(1)165 CTHYST hermalshut-downrecoveryhysteresis15 CJunction Temperature (oC)Proportional Gate-drive Threshold (mV)-40-20020406080100120140-100-95-90-8 5-80-75-70-65-60-55-50-45-40-35D001 MeanMinimumMaximumJunction Temperature (oC)REG Pin Regulation Level VREG (V) = 0 mAILOAD_REG = 10 mAJunction Temperature (oC)SR Turn-off Threshold VTHVGOFF (mV) VDD12-V VDDJ unction Temperature (oC)SR Turn-on Threshold VTHVGON (mV)-40-20020406080100120140-500-450-400 -350-300-250-200-150-100-500D001 Junction Temperature (oC)UVLO Thresholds (V) ONUVLO OFFJ unction Temperature (oC)VDD Current, RUN (IVDDRUN) (mA)