Vishay Semiconductors

1 Semiconductors Revision: 02-Aug-171 Document Number: 96201 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Rectifier, 2 x 10 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see / APPLICATIONSVS-MUR2020CT-M3 is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and CHARACTERISTICSP ackage3L TO-220 ABIF(AV)

2 2 x 10 AVR200 VVF at Vtrr nsTJ CCircuit configurationCommon cathodeAnode132 Basecommoncathode2 CommoncathodeAnode3L TO-220 ABABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOLTEST CONDITIONSMAX. UNITSPeak repetitive reverse voltageVRRM200 VAverage rectified forward currentper legIF(AV)10 Atotal deviceRated VR, TC = 145 C20 Non-repetitive peak surge current per legIFSM100 Peak repetitive forward current per legIFMR ated VR, square wave, 20 kHz, TC = 145 C20 Operating junction and storage temperaturesTJ, TStg-65 to +175 CELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)PARAMETER SYMBOLTEST CONDITIONS MIN.

3 TYP. MAX. UNITSB reakdown voltage, blocking voltageVBR,VRIR = 100 A200--VForward voltageVFIF = 8 A, TJ = 125 = 16 = 16 A, TJ = 125 leakage currentIRVR = VR rated--15 ATJ = 150 C, VR = VR rated--250 Junction capacitanceCTVR = 200 V-55-pFSeries inductanceLSMeasured lead to lead 5 mm from package Semiconductors Revision: 02-Aug-172 Document Number: 96201 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Maximum Forward Voltage Drop CharacteristicsFig. 2 - Typical Values of Reverse Current vs. Reverse VoltageDYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified)PARAMETER SYMBOLTEST CONDITIONS MIN.

4 TYP. MAX. UNITSR everse recovery timetrrIF = A, dIF/dt = 50 A/ s, VR = 30 V--35nsIF = A, IR = A, IREC = A--25TJ = 25 CIF = 10 A dIF/dt = 200 A/ s VR = 160 V-21-TJ = 125 C-35-Peak recovery currentIRRMTJ = 25 = 125 recovery chargeQrrTJ = 25 C-25-nCTJ = 125 C-78-THERMAL MECHANICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITSM aximum junction and storage temperature rangeTJ, TStg-65-175 CThermal resistance, junction to caseper legRthJC C/Wtotal resistance, junction to ambient per legRthJA--50 Thermal resistance, case to heatsinkRthCSMounting surface, flat, smooth and ( )-12(10)kgf cm(lbf in)Marking deviceCase style 3L TO-220 ABMUR2020CT1100 VFM - Forward Voltage Drop (V)IF - InstantaneousForward Current (A) = 175 CTJ = 125 CTJ = 25 - Reverse Voltage (V)IR - Reverse Current ( A) = 175 CTJ = 150 CTJ = 125 CTJ = 100 CTJ = 25 Semiconductors Revision: 02-Aug-173 Document Number: 96201 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Typical Junction Capacitance vs. Reverse VoltageFig. 4 - Maximum Thermal Impedance ZthJC CharacteristicsFig. 5 - Maximum Allowable Case Temperature vs. Average Forward CurrentFig. 6 - Forward Power Loss Characteristics10010000 10100100010VR - Reverse Voltage (V)CT - Junction Capacitance (pF)TJ = 25 1t1 - Rectangular Pulse Duration (s)ZthJC - Thermal Impedance ( C/W)..PDMt1t2 Notes:1. Duty factor D = t1/t22. Peak TJ = PDM x ZthJC + TC 1 Single pulse(thermal resistance)D = = = = = = Case Temperature ( C)IF(AV) - Average Forward Current (A)160170180 See note (1)150DC1401306912 Square wave (D = )Rated VR applied150612 Average Power Loss (W)IF(AV) - Average Forward Current (A)0D = = = = = = Semiconductors Revision: 02-Aug-174 Document Number: 96201 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 7 - Typical Reverse Recovery Time vs. dIF/dtFig. 8 - Typical Stored Charge vs. dIF/dtNote(1)Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Fig. 9 - Reverse Recovery Waveform and Definitions1001000trr (ns)dIF/dt (A/ s)20IF = 20 AIF = 10 AIF = 5 A40VR = 160 VTJ = 125 CTJ = 25 C30501001001000 Qrr (nC)dIF/dt (A/ s)50IF = 20 AIF = 10 AIF = 5 A250150VR = 160 VTJ = 125 CTJ = 25 IRRMdi(rec) IRRMIRRM trrtbtaIFdiF/dt0(1)(2)(3)(4)(5)(1) diF/dt - rate of change of current through zero crossing(2) IRRM - peak reverse recovery current(3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through IRRM and IRRM extrapolated to zero current.

7 (4) Qrr - area under curve defined by trr and IRRM trr x IRRM 2 Qrr =(5) di(rec)M/dt - peak rate of change of current during tb portion of Semiconductors Revision: 02-Aug-175 Document Number: 96201 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT INFORMATION TABLEORDERING INFORMATION (Example)PREFERRED P/NQUANTITY PER T/RMINIMUM ORDER QUANTITYPACKAGING DESCRIPTIONVS-MUR2020CT-M3501000 Antistatic plastic tubeLINKS TO RELATED marking information MUR series1- Vishay Semiconductors product3-Current rating (20 = 20 A)4-Voltage rating (20 = 200 V)5-CT = center tap (dual)6 Device code513246VS- MUR2020CT-M3-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free-Environmental digit:Outline Semiconductors Revision: 13-Jun-20191 Document Number: 96154 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO-220 ABDIMENSIONS in millimeters and inchesNotes(1)Dimensioning and tolerancing as per ASME (2)Lead dimension and finish uncontrolled in L1(3)Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed mm ( ") per side. These dimensions are measured at the outermost extremes of the plastic body(4)Dimension b1, b3, and c1 apply to base metal only(5)Controlling dimensions: inches(6)Thermal pad contour optional within dimensions E, H1, D2, and E1(7)Outline conforms to JEDEC TO-220, except , , x b23 x b(b, b2)b1, b3 Lead to JEDEC outline TO-220AB(6)(6)(6)L1(2)Detail BSection C - C and D - DBase metalPlating(4)(4)c1c(6)(6) PEQDLcD1ee12 xABAAACA2A1 Thermal padH1(E)(H1)D2 Detail BE1 View A - ALegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

9 Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

10 Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.