Transcription of 清洗製程 - web.cjcu.edu.tw
1 30% 8 2000 9000 9m3 9000 9 m RCA RCA APM SC-1 HA NH4OH +H2O2+ H2O chelating agent EDTA SPM HSO+HO+HO H2SO4+ H2O2+ H2O HPM SC-2 HB HCl + H2O2+ H2O DHF HF + H2O FPM HF + H2O2+ H2O BHF BHF HF + NH4F H2PO4 A ammonium P peroxide M mi t re M mixture S sulfuric acid H hydrochloric acid D dil t d D diluted B buffer F SPM H2SO4+ H2O24:1 5 min APM 10 min 80-90 C HPM 10 min 80-90 C8090 C D.
2 I. Water ULSI ULSI > m < < 1010 /cm2 < 1010 /cm2 < 5 < 5 5b < 5 ppb HF H2SO4 HCl HCl H3PO4 HNO33 CH3 COOH NH4OH KOH NaOHNaOH choline teritary amine isopropanol isopropyl alcohol IPA ethanol ethanol trichloroethylene TCE toluene acetone acetone chloride methylene H2O2 NH4 FSiCl SiCl4 SiHCl3 TEOS Si(C2H5O)4 254 Br2 EDTA SiGeB Si Ge B P As Sb Al Cu Ga In Ta Nb D. I. Water pod SMIF standard mechanical SMIF standard mechanical interface TCE 20,000 800.
3 000 Hz fl overflow SC-1 SC1 chemical mechanical polishingCMP CVD polishing CMP CVD microcluster beam excimer laser CFC CFC PFC SF6 CO2 PFC PFC HF NOx HF HF HF H3PO4 H2SO4 CMP
