ZXMP10A13F Product Summary Features

1 ZXMP10A13F . 100V P-CHANNEL ENHANCEMENT MODE MOSFET. Product Summary Features Max ID Fast Switching Speed BVDSS Max RDS(ON) Package TA = +25 C Low Input Capacitance 1 @ VGS= -10V Low Gate Charge -100V SOT23. @ VGS= Low Threshold Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2). Halogen and Antimony Free. Green Device (Note 3). Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET utilizes a unique structure that combines the benefits An Automotive-Compliant Part is Available Under Separate of low on-resistance with fast switching speed, making it ideal for Data Sheet (ZXMP10A13FQ). high-efficiency power management applications. Applications Mechanical Data DC-DC Converters Case: SOT23. Power Management Functions Case Material: Molded Plastic, UL Flammability Classification Disconnect Switches Rating 94V-0. Motor Control Moisture Sensitivity: Level 1 per J-STD-020.

2 Terminals: Matte Tin Finish Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208. Weight: grams (Approximate). SOT23 D. S. G. D. G. S. Top View Top View Equivalent Circuit Pin Out Ordering Information (Note 4). Part Number Case Packaging ZXMP10A13 FTA SOT23 3,000/Tape & Reel ZXMP10A13 FTC SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green". and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information SOT23. 7P1 = Product Type Marking Code 7P1. ZXMP10A13F 1 of 8 June 2016. Document number: DS33596 Rev.

3 5 - 2 Diodes Incorporated ZXMP10A13F . Maximum Ratings (@TA = +25 C, unless otherwise specified.). Characteristic Symbol Value Units Drain-Source Voltage VDSS -100 V. Gate-Source Voltage VGS 20 V. (Note 6) Continuous Drain Current VGS = 10V TA = +70 C (Note 6) ID A. (Note 6) Pulsed Drain Current (Note 7) IDM A. Continuous Source Current (Body Diode) (Note 5) IS A. Pulsed Source Current (Body Diode) (Note 7) ISM A. Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 625 mW. PD. Linear Derating Factor 5 mW/ C. Power Dissipation (Note 6) 806 mW. PD. Linear Derating Factor mW/ C. Thermal Resistance, Junction to Ambient (Note 5) R JA 200 C/W. Thermal Resistance, Junction to Ambient (Note 6) R JA 155 C/W. Thermal Resistance, Junction to Leads (Note 8) R JL 194 C/W. Operating and Storage Temperature Range TJ, TSTG -55 to +150 C. Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

4 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D= pulse width=10 s - pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP10A13F 2 of 8 June 2016. Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F . Thermal Characteristics (Continued). 10 RDS(on). Max Power Dissipation (W). -ID Drain Current (A). Limited 1 DC. 100m 1s 100ms 10ms 10m Single Pulse 1ms T amb=25 C 100 s 1 10 100 0 20 40 60 80 100 120 140 160. -VDS Drain-Source Voltage (V) Temperature ( C). Safe Operating Area Derating Curve 200 T amb=25 C. Thermal Resistance ( C/W). Single Pulse Maximum Power (W). T amb=25 C. 150 10. D= 100. Single Pulse D= 50 D= 1. D= 0. 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s). Transient Thermal Impedance Pulse Power Dissipation ZXMP10A13F 3 of 8 June 2016.

5 Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F . Electrical Characteristics (@TA = +25 C, unless otherwise specified.). Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS. Drain-Source Breakdown Voltage BVDSS -100 V ID = -250 A, VGS = 0V. Zero Gate Voltage Drain Current IDSS A VDS = -100V, VGS = 0V. Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V. ON CHARACTERISTICS. Gate Threshold Voltage VGS(TH) V ID = -250 A, VDS = VGS. VGS = -10V, ID = Static Drain-Source On-Resistance (Note 9) RDS(ON) . VGS = , ID = Forward Transconductance (Notes 9 & 11) gFS S VDS = -15V, ID = Diode Forward Voltage (Note 9) VSD V TJ = +25 C, IS = , VGS = 0V. Reverse Recovery Time (Note 11) tRR 29 ns TJ = +25 C, IF = , Reverse Recovery Charge (Note 11) QRR 31 nC di/dt = 100A/ s DYNAMIC CHARACTERISTICS (Note 11). Input Capacitance CISS 141 . VDS = -50V, VGS = 0V.

6 Output Capacitance COSS pF. f = Reverse Transfer Capacitance CRSS . Turn-On Delay Time (Note 10) tD(ON) . Turn-On Rise Time (Note 10) tR VDD = -50V, ID = , ns Turn-Off Delay Time (Note 10) tD(OFF) RG VGS = -10V. Turn-Off Fall Time (Note 10) tF . VDS = -50V, VGS = , Total Gate Charge (Note 10) QG nC. ID = Total Gate Charge (Note 10) QG . VDS = -50V, VGS = -10V, Gate-Source Charge (Note 10) QGS nC. ID = Gate-Drain Charge (Note 10) QGD . Notes: 9. Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMP10A13F 4 of 8 June 2016. Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F . Typical Characteristics 10 10. T = 25 C 10V 7V T = 150 C 10V 7V. -ID Drain Current (A). -ID Drain Current (A). 5V 5V. 1 1 4V. 4V.

7 3V. -VGS -VGS. 1E-3 1E-3. 1 10 1 10. -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V). Output Characteristics Output Characteristics 1. T A = 150 C VGS = -10V. 1. T A = 125 C. Normalised RDS(on) and VGS(th). ID = - (A). CURRENT (A). VD S = 10V. T = 150 C. Current RDS(on). T = 25 C -I D, DRAIN. TA = 85 C. VGS(th). -ID Drain VGS = VDS. T A = 25 C. -VDS = 10V ID = -250uA. T A = -55 C 0. 0 1. 3 2 3. 4. 4 5 6. 57 8. -50 0 50 100 150. -V-VGS, GATE-SOURCE. Gate-SourceVOLTAGE. GS. Voltage(V). (V) Tj Junction Temperature ( C). Typical Transfer Characteristics Typical Transfer Characteristics Normalised Curves v Temperature 10. RDS(on) Drain-Source On-Resistance . -VGS T = 25 C. -ISD Reverse Drain Current (A). 100 4V T = 150 C. 1. 5V. 10 T = 25 C. 7V. 10V. 1. 1 10 -ID Drain Current (A) -VSD Source-Drain Voltage (V). On-Resistance v Drain Current Source-Drain Diode Forward Voltage ZXMP10A13F 5 of 8 June 2016.

8 Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F . Typical Characteristics (Continued). 10. VGS = 0V. -VGS Gate-Source Voltage (V). 200 ID = f = 1 MHz C Capacitance (pF). 8. 150. CISS 6. 100 COSS. 4. CRSS. 50 2. VDS = -50V. 0 0. 1 10 100 0 1 2 3 4. -VDS - Drain - Source Voltage (V) Q - Charge (nC). Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Test Circuits ZXMP10A13F 6 of 8 June 2016. Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F . Package Outline Dimensions Please see for the latest version. SOT23. All 7 . H. GAUGE PLANE. SOT23. Dim Min Max Typ J A K1 K. B C a D A M. F L L1 G H J K C B K1 L L1 M D a 0 8 . All Dimensions in mm F G. Suggested Pad Layout Please see for the latest version. SOT23. Y. Dimensions Value (in mm). C Y1 C. X X1 Y Y1 X X1. ZXMP10A13F 7 of 8 June 2016. Document number: DS33596 Rev. 5 - 2 Diodes Incorporated ZXMP10A13F .

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