avalanche performance. - redrok.com
@ TC = 25 CContinuous Drain Current, VGS @ 10V169 ID @ TC = 100 CContinuous Drain Current, VGS @ 10V118 AIDMPulsed Drain Current2 680PD @TC = 25 CPower Dissipation330WLinear Derating CVGSGate-to-Source Voltage 20VEASSingle Pulse avalanche Energy 560mJIARAvalanche CurrentSee , 12b, 15, 16AEARRepetitive avalanche Energy mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175TSTGStorage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting Torque, 6-32 or M3 screw10 lbf in ( m)HEXFET Power MOSFETSpecifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFETsutilizes the latest processing techniques to achieveextremely low on-resistance per silicon area. Additionalfeatures of this HEXFET power MOSFET are a 175 Cjunction operating temperature, fast switching speedand improved repetitive avalanche rating.
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics
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