AN1541/D Introduction to Insulated Gate Bipolar Transistors

1AN1541/DIntroduction to InsulatedGate Bipolar TransistorsPrepared by:Jack Takesuye and Scott DeutyMotorola power conversion relies more on switchedapplications, semiconductor manufacturers need to createproducts that approach the ideal switch. The ideal switchwould have: 1)zero resistance or forward voltage drop inthe on state, 2)infinite resistance in the off state, 3) switchwith infinite speed, and 4) would not require any inputpower to make it using existing solid state switch technologies, thedesigner must deviate from the ideal switch and choose adevice that best suits the application with a minimal loss ofef ficiency. The choice involves considerations such asvoltage, current, switching speed, drive circuitry, load, andtemperature effects. There are a variety of solid state switchtechnologies available to perform switching functions;however, all have strong and weak VOLTAGE POWER MOSFETsThe primary characteristics that are most desirable in asolid state switch are fast switching speed, simple driverequirements and low conduction loss.

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. ... The Insulated−Gate Bipolar Transistor (IGBT) technology offers a combination of these attributes. The IGBT is, in fact, a spin−off from power MOSFET ... bipolar transistor while switching much faster. IGBTs are

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  Introduction, Gate, Transistor, Insulated, Bipolar, Insulated gate bipolar transistor, Bipolar transistor, Introduction to insulated gate bipolar transistors

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