Transcription of New Lecture 20 - Walter Scott, Jr. College of Engineering
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New Lecture 20 - Walter Scott, Jr. College of Engineering
1 Lecture 20Bi-directional Switching Problem Solutions andOverview of insulated gate bipolar TransistorSwitchesA. Illustrative Bi-directional Current ProblemSolution : Erickson s Problem. Erickson s : Current quadrants of operation for real solidstate switchesa. Two quadrant illustrative problem 1. Voltage bi-directional switchexample3. Four quadrant switch and exampleB. Introduction to the IGBT Switch DeviceStructure and I-V Characteristics1. Overview of the IGBT Device Goals2. IGBT Device Cross-sections3. SOA regions and long tail turn-off time ofIGBT devices4. Illustrative IGBT Energy loss Problem Solution : Problem. (1) Erickson s problem : Current bi-directional switchingFor Chapter 2 of Erickson in problems #4 & #5 you solved for VOFFand ION of switches leading to the transistor circuit. Follow thesame procedure as your old homework.+-vRLCVg1221iLVgI1vL+-v+-LRCICS W1 on/SW2 offVgI1vL+-v+-LRCICI2SW1 off/SW2 onTime DTsVL = Vg - Vc1I = I - VRVg1221 Time D TsVL = - VgcI = - VRVolt-sec balance on L: <VL> = 0, D = 1 - DD(V-V)-D V = 0 DV-D+DV = 0gggg 3DV = 2 Dvg - VgV = V(2D-1)Dg output voltage in steady stateCharge balance on the capacitor: <ic> = 0D (I-VR) -DVR = 0 DI - DVR - VR + DVR = 011 1g2I = VDR = V(2D-1)DRD > Gives bipolar currentD < when onVg-+-+dabc-+-++-VLL
and the MOSFET is the insulated gate bipolar transistor (IGBT). This device was invented to capture the two separate advantages of each the bipolar and the MOSFET transistor in one device.
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