Transcription of CSD88537ND Dual 60-V N-Channel NexFET™ …
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03691215182124273002468101214161820 VGS - Gate-to- Source Voltage (V)RDS(on) - On-State Resistance (m )TC = 25 C, ID = 8 ATC = 125 C, ID = 8AG001 01234567891003691215Qg - Gate Charge (nC)VGS - Gate-to-Source Voltage (V)ID = 8 AVDS = 30VG001 S1G1G2S2D1D1D2D212348765 ProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityCSD88537 NDSLPS455A JANUARY2014 REVISEDAUGUST2014 CSD88537 NDDual 60-V N-ChannelNexFET PowerMOSFET1 FeaturesProductSummary1 Ultra-LowQgand QgdTA= 25 CTYPICALVALUEUNIT AvalancheRatedVDSD rain-to-SourceVoltage60V Pb FreeQgGateChargeTotal(10 V) RoHSCompliantVGS= 6 V15m HalogenFreeRDS(on)Drain-to-SourceOn-Resi stanceVGS= 10 VGS(th) Applications Half Bridgefor MotorControl. SynchronousBuckConverterOrderingInformat ion(1)DeviceMediaQtyPackageShip3 DescriptionCSD88537ND13-InchReel2500SO-8 PlasticTapeandThisdualSO-8,60 V, NexFET powerPackageReelCSD88537 NDT7-InchReel250 MOSFETis designedto serveas a half bridgein low(1) For all availablepackages,see the end of the ViewAbsoluteMaximumRatingsTA= 25 CVALUEUNITVDSD rain-to-SourceVoltage60 VVGSGate-to-SourceVoltage 20 VContinuousDrainCurrent(Packagelimited)1 5 ContinuousDrainCurrent(Siliconlimited),I D16 ATC= 25 CContinuousDrainCurrent(1) ,TA= 25 C(2)108 APDP owerDi
0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 8A T C = 125°C, I D = 8A G001 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15
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