Transcription of Dual N-channel MOSFET
{{id}} {{{paragraph}}}
Example: stock market
Dual N-channel MOSFET
AO4822A. 30V dual N-channel MOSFET . General Description Product Summary The AO4822A uses advanced trench technology to VDS 30V. provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A. device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) <19m . applications. RDS(ON) (at VGS = ) < 26m . ESD Protected 100% UIS Tested 100% Rg Tested D D. SOIC-8. Top View Bottom View Top View S2 1 8 D2. G2 2 7 D2. S1 D1 G G. 3 6. G1 4 5 D1. S S. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C 8. ID. Current TA=70 C A. Pulsed Drain Current C IDM 48. Avalanche Current C IAS, IAR 19 A.
AO4822A 30V Dual N-channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 8A R DS(ON) (at V GS =10V) <19mΩ R DS(ON) (at V GS = 4.5V) < 26mΩ ESD Protected 100% UIS Tested
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: