Dual N-channel MOSFET

1 AO4822A. 30V dual N-channel MOSFET . General Description Product Summary The AO4822A uses advanced trench technology to VDS 30V. provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A. device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) <19m . applications. RDS(ON) (at VGS = ) < 26m . ESD Protected 100% UIS Tested 100% Rg Tested D D. SOIC-8. Top View Bottom View Top View S2 1 8 D2. G2 2 7 D2. S1 D1 G G. 3 6. G1 4 5 D1. S S. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C 8. ID. Current TA=70 C A. Pulsed Drain Current C IDM 48. Avalanche Current C IAS, IAR 19 A.

2 Avalanche energy L= C EAS, EAR 18 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 74 90 C/W. Maximum Junction-to-Lead Steady-State R JL 32 40 C/W. Rev 4 : November 2010 Page 1 of 6. AO4822A. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 30 V. VDS=30V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 10 A. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V.

3 ID(ON) On state drain current VGS=10V, VDS=5V 48 A. VGS=10V, ID=8A 19. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 21 25. VGS= , ID=6A 26 m . gFS Forward Transconductance VDS=5V, ID=8A 30 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current A. DYNAMIC PARAMETERS. Ciss Input Capacitance 600 740 888 pF. Coss Output Capacitance VGS=0V, VDS=15V, f=1 MHz 77 110 145 pF. Crss Reverse Transfer Capacitance 50 82 115 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 12 15 18 nC. Qg( ) Total Gate Charge 6 9 nC. VGS=10V, VDS=15V, ID=8A. Qgs Gate Source Charge 2 3 nC. Qgd Gate Drain Charge 2 3 5 nC. tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL= , ns tD(off) Turn-Off DelayTime RGEN=3 19 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/ s 6 8 10 ns Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/ s 14 18 22 nC.

4 A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.

5 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: November 2010 Page 2 of 6. AO4822A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 30 30. 10V 4V VDS=5V. 25 25. 20 20. ID (A). ID(A). 15 15. 3V. 10 10 125 C. 5 5 25 C. VGS= 0 0. 0 1 2 3 4 5 1 2 3 4. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 30 Normalized On-Resistance VGS=10V. 25 ID=8A. ). RDS(ON) (m.

6 VGS= 17. 20 5. 2. 15 VGS= 10. 1. ID=6A. VGS=10V. 10 0 5 10 15 20 0 25 50 75 100 125 150 175. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) 18 Temperature Figure 4: On-Resistance vs. Junction (Note E). 40 +02. ID=8A. 35 +01. 40. 30 +00. ). RDS(ON) (m . 125 C 125 C. IS (A). 25. 20. 25 C. 15 25 C. 10. 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts). (Note E) Figure 6: Body-Diode Characteristics (Note E). Rev 4: November 2010 Page 3 of 6. AO4822A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 1200. VDS=15V. ID=8A. 1000. 8. Ciss Capacitance (pF). 800. VGS (Volts). 6. 600. 4. 400 Coss 2. 200. Crss 0 0. 0 5 10 15 0 5 10 15 20 25 30. Qg (nC) VDS (Volts).

7 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100. IAR (A) Peak Avalanche Current TA=25 C. 10 s RDS(ON). ID (Amps). TA=100 C limited 100 s 10. 1ms 10ms TA=125 C TJ(Max)=150 C DC 10s TA=150 C. TA=25 C. 1 1 10 100. VDS (Volts). Time in avalanche, tA (s). Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased C) Safe Operating Area (Note F). 10000. TA=25 C. 1000. Power (W). 100. 10. 1. 10 1000. Pulse Width (s). Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F). Rev 4: November 2010 Page 4 of 6. AO4822A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10. D=Ton/T In descending order TJ,PK=TA+ JA D= , , , , , , single pulse Z JA Normalized Transient R JA=90 C/W.

8 Thermal Resistance 1. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 12: Normalized Maximum Transient Thermal Impedance (Note F). Rev 4: November 2010 Page 5 of 6. AO4822A. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 4: November 2010 Page 6 of 6.