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1 IntroductionApplicationReportSLUA341 , , ,driverICsandPWMcontrollers, ,resultsinalowerassociatedon-resistance, RDS(on), ,loweringtheMOSFETon-resistanceisespecia llycriticalforthesynchronousrectifier, ,however, , ,ahighergatechargerequirementwillproduce longerriseandfalltimes, ,theappliedvoltageshoulddrivetheMOSFET gatessuchthattheaddedgatechargeandswitch inglossesarelessthanthepowersavingsgaine dbyloweringRDS(on).Forexample, DutyCycleFSW SwitchingFrequencyG1 ControlMOSFETGateDriveG2 SynchronousRectifierMOSFETGateDriveIG(si nk) DriverSinkCurrentIG(source) DriverSourceCurrentIOUT OutputLoadCurrentLLUMP DrivertoMOSFETP arasiticInductancePBD SynchronousRectifierMOSFETBody-DiodePowe rLossPC MOSFETC onductionPowerLossPD TotalDissipatedPower(G1,Q1,G2,Q2)POUT MOSFETO utputCapacitanceLossPRR SynchronousRectifierMOSFETBody-DiodeReve rseRecoveryPowerLossPSW mosfets witchingLossQG TotalGateChargeQRR Body-DiodeReverseRecoveryChargeQ1 ControlMOSFETQ2 SynchronousRectifierMOSFETRDS(on) MOSFETD rain-to-SourceOnResistanceRG MOSFETE xternalDiscreteGateResist
1 Introduction Application Report SLUA341– June 2005 Optimizing MOSFET Characteristics by Adjusting Gate Drive Amplitude Steve Mappus.....
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