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Transistor Technologies for High Efficiency and Linearity

Transistor Technologies for High Efficiency and Linearity HEMT Requirements for Transistors in Power Amplifiers Iout Vout Vmin Nonlinear FET Iout Vout Vmin Nonlinear HBT High microwave gain Low on-resistance & low knee voltage High power density High voltage capability Linearity Ease of matching Ease of biasing Adequate heatsinking Low cost (high yield) Reliability & ruggedness Stability Central Concern for Transistors in ECE265C What is highest voltage that can be maintained? What is highest current that can be delivered? What is highest power that can be withstood? Safe Operating Area for Transistors I V Imax On-state breakdown voltage Off-state breakdown voltage Maximum power dissipation Imax depends on device size Maximum power dissipation depends on size and duty cycle - worse for CW tone than for high PAR signals Tradeoff of Breakdown Voltage and ft To avoid breakdown, generally must limit peak electric field to belo

Differential Topology • Double the available voltage swing • Even-order harmonic suppression • Double the frequency of current injection into substrate –Reduce the potential for LO-pulling • The tail current source is removed from the standard differential pair (this is a “quasi-differential” structure) –DC current set by the biasing of input devices

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