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AN900 APPLICATION NOTE - STMicroelectronics

AN900 APPLICATION NOTE - STMicroelectronics

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Diffusion This step is used to introduce dopants inside the material or to grow a thin oxide layer onto the wafer. Wafers are inserted into a high temperature furnace (up to 1200 ° C) and doping gazes penetrate the silicon or react with it to grow a silicon oxide layer. Ionic Implantation

  Diffusion

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